JPS5963738A - 誘電体分離基板の製造方法 - Google Patents

誘電体分離基板の製造方法

Info

Publication number
JPS5963738A
JPS5963738A JP57174263A JP17426382A JPS5963738A JP S5963738 A JPS5963738 A JP S5963738A JP 57174263 A JP57174263 A JP 57174263A JP 17426382 A JP17426382 A JP 17426382A JP S5963738 A JPS5963738 A JP S5963738A
Authority
JP
Japan
Prior art keywords
silicon
polycrystalline silicon
substrate
dielectric isolation
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57174263A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244417B2 (cg-RX-API-DMAC10.html
Inventor
Akinobu Satou
佐藤　倬暢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP57174263A priority Critical patent/JPS5963738A/ja
Publication of JPS5963738A publication Critical patent/JPS5963738A/ja
Publication of JPS6244417B2 publication Critical patent/JPS6244417B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/019—
    • H10W10/10—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP57174263A 1982-10-04 1982-10-04 誘電体分離基板の製造方法 Granted JPS5963738A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57174263A JPS5963738A (ja) 1982-10-04 1982-10-04 誘電体分離基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57174263A JPS5963738A (ja) 1982-10-04 1982-10-04 誘電体分離基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5963738A true JPS5963738A (ja) 1984-04-11
JPS6244417B2 JPS6244417B2 (cg-RX-API-DMAC10.html) 1987-09-21

Family

ID=15975575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57174263A Granted JPS5963738A (ja) 1982-10-04 1982-10-04 誘電体分離基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5963738A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382551A (en) * 1993-04-09 1995-01-17 Micron Semiconductor, Inc. Method for reducing the effects of semiconductor substrate deformities

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382551A (en) * 1993-04-09 1995-01-17 Micron Semiconductor, Inc. Method for reducing the effects of semiconductor substrate deformities

Also Published As

Publication number Publication date
JPS6244417B2 (cg-RX-API-DMAC10.html) 1987-09-21

Similar Documents

Publication Publication Date Title
US4408386A (en) Method of manufacturing semiconductor integrated circuit devices
US4193836A (en) Method for making semiconductor structure
JPH0799239A (ja) 半導体装置及び半導体装置の製造方法
US3829889A (en) Semiconductor structure
JP2750163B2 (ja) 誘電体分離型半導体装置の製造方法
US3974006A (en) Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate
JPS5963738A (ja) 誘電体分離基板の製造方法
US3531857A (en) Method of manufacturing substrate for semiconductor integrated circuit
JPS6343887B2 (cg-RX-API-DMAC10.html)
US4120744A (en) Method of fabricating a thermal display device
JPS6152572B2 (cg-RX-API-DMAC10.html)
CA1059647A (en) Method of preparing dielectric insulator separated substrate for semiconductor integrated circuits
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
JPS6244416B2 (cg-RX-API-DMAC10.html)
JPS6244412B2 (cg-RX-API-DMAC10.html)
JPS6244415B2 (cg-RX-API-DMAC10.html)
JPS58197740A (ja) 集積回路用基板の製造方法
JPS6155253B2 (cg-RX-API-DMAC10.html)
JPS59167029A (ja) 半導体装置の製造方法
JPS6293954A (ja) 誘電体分離基板の製造方法
JPS6221269B2 (cg-RX-API-DMAC10.html)
JPS5840337B2 (ja) 半導体集積回路の製造方法
JPS6244413B2 (cg-RX-API-DMAC10.html)
JPH0212854A (ja) 誘電体分離型半導体集積回路基板の製造方法
JPS6298639A (ja) 誘電体分離基板の製造方法