JPS5963729A - イオンシヤワ装置 - Google Patents

イオンシヤワ装置

Info

Publication number
JPS5963729A
JPS5963729A JP57173270A JP17327082A JPS5963729A JP S5963729 A JPS5963729 A JP S5963729A JP 57173270 A JP57173270 A JP 57173270A JP 17327082 A JP17327082 A JP 17327082A JP S5963729 A JPS5963729 A JP S5963729A
Authority
JP
Japan
Prior art keywords
plasma
ion
extraction electrode
electrode
java
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57173270A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157493B2 (cg-RX-API-DMAC7.html
Inventor
Toshiro Ono
俊郎 小野
Seitaro Matsuo
松尾　誠太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57173270A priority Critical patent/JPS5963729A/ja
Priority to EP83305202A priority patent/EP0106497B1/en
Priority to DE8383305202T priority patent/DE3376921D1/de
Priority to US06/530,424 priority patent/US4450031A/en
Publication of JPS5963729A publication Critical patent/JPS5963729A/ja
Publication of JPH0157493B2 publication Critical patent/JPH0157493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
JP57173270A 1982-09-10 1982-10-04 イオンシヤワ装置 Granted JPS5963729A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57173270A JPS5963729A (ja) 1982-10-04 1982-10-04 イオンシヤワ装置
EP83305202A EP0106497B1 (en) 1982-09-10 1983-09-07 Ion shower apparatus
DE8383305202T DE3376921D1 (en) 1982-09-10 1983-09-07 Ion shower apparatus
US06/530,424 US4450031A (en) 1982-09-10 1983-09-08 Ion shower apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57173270A JPS5963729A (ja) 1982-10-04 1982-10-04 イオンシヤワ装置

Publications (2)

Publication Number Publication Date
JPS5963729A true JPS5963729A (ja) 1984-04-11
JPH0157493B2 JPH0157493B2 (cg-RX-API-DMAC7.html) 1989-12-06

Family

ID=15957333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57173270A Granted JPS5963729A (ja) 1982-09-10 1982-10-04 イオンシヤワ装置

Country Status (1)

Country Link
JP (1) JPS5963729A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127053A (ja) * 1984-07-13 1986-02-06 Nissin Electric Co Ltd 電子ビ−ム源
US7495241B2 (en) 2004-02-26 2009-02-24 Tdk Corporation Ion beam irradiation apparatus and insulating spacer for the same
JP2012523123A (ja) * 2009-04-03 2012-09-27 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド プラズマシース工学を利用した、向上したエッチングおよび堆積プロフィール制御
JP2017041385A (ja) * 2015-08-20 2017-02-23 国立研究開発法人産業技術総合研究所 イオンビーム電流密度増加装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127053A (ja) * 1984-07-13 1986-02-06 Nissin Electric Co Ltd 電子ビ−ム源
US7495241B2 (en) 2004-02-26 2009-02-24 Tdk Corporation Ion beam irradiation apparatus and insulating spacer for the same
JP2012523123A (ja) * 2009-04-03 2012-09-27 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド プラズマシース工学を利用した、向上したエッチングおよび堆積プロフィール制御
JP2017041385A (ja) * 2015-08-20 2017-02-23 国立研究開発法人産業技術総合研究所 イオンビーム電流密度増加装置

Also Published As

Publication number Publication date
JPH0157493B2 (cg-RX-API-DMAC7.html) 1989-12-06

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