JPS595966B2 - Magnetic head formation method - Google Patents
Magnetic head formation methodInfo
- Publication number
- JPS595966B2 JPS595966B2 JP10990376A JP10990376A JPS595966B2 JP S595966 B2 JPS595966 B2 JP S595966B2 JP 10990376 A JP10990376 A JP 10990376A JP 10990376 A JP10990376 A JP 10990376A JP S595966 B2 JPS595966 B2 JP S595966B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic body
- conductor
- lower magnetic
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Description
【発明の詳細な説明】
本発明は、薄膜磁気ヘッドの形成方法に係り、特に、有
機シリコン化合物を熱処理してSiO2膜を生成させ、
それを絶縁膜として利用することに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a thin film magnetic head, and in particular, to a method for forming a thin film magnetic head, in particular, heat treating an organic silicon compound to form a SiO2 film;
This relates to using it as an insulating film.
薄膜磁気ヘッドは、磁気ドラム、磁気テープ或いは磁気
ディスク等の磁気記録密度を高くするために薄膜技術で
形成した磁気ヘッドで、その構造はコイル導体が1ター
ンの場合を示すと第1図のようになつている。A thin film magnetic head is a magnetic head formed using thin film technology to increase the magnetic recording density of magnetic drums, magnetic tapes, magnetic disks, etc. Its structure is as shown in Figure 1 when the coil conductor has one turn. It's getting old.
即ち、下部磁性体2と、下部磁性体上に一端は下部磁性
体の一端に接し他端は下磁性体の他端と磁気ギャップG
を介して対向し、これによつて下部磁性体と共に一部に
磁気ギャップを有する磁気回路を形成する上部磁性体6
と、一部が両磁性体間を通り磁気回路と交差する導体4
と、導体と両磁性体との間を電気的に絶縁する絶縁膜3
及び5とを具備し、これが薄膜技術により基板1上に積
層形成された構造となつている。かかる構造の磁気ヘッ
ドは次の工程で製造される。(1違板1を準備し、その
一面に蒸着、スパッタリング、めつき等の手法でパーマ
ロイ等の磁性膜を形成し、これをホトリソグラフィー技
術を利用して所定形状の下部磁性体2に成型する。(2
)下部磁性体2及び基板1上に蒸着、スパッタリング等
を用いてSiO2、At203、Si3N4等からなる
絶縁膜3を形成する。(3)絶縁膜3上にAt、Cu、
Au等の導体膜を形成し、所望形状に成型して導体4を
得る。(4)導体膜4の所定の個所上にsio2、At
2o3、si3N4等からなる絶縁膜5を形成する。(
5)下部磁性体2の上部磁性体6と接触すべき個所の絶
縁膜3を除去する。(6)上部磁性体6を下部磁性体2
と同様な方法で形成する。このようにして製作された磁
気ヘツドについて、磁気特性の測定を進めたところ、読
み出し電圧値が50μV〜300μVと約6倍ものばら
つきが認められた。そこで、この原因を調べたところ、
第1図のAA′f)断面を示す第2図に示すように、導
体4が下部磁性体2に乗り上げる部分に、絶縁膜3が完
全に形成されず、導体と磁性体とが短絡しているものが
あることがわかつた。真空を利用した薄膜形成方法では
、パターンの上側から膜が堆積するため、段差部の膜厚
が小さくなつたり或いは膜が形成されないということが
生じる。従つて導体と磁性体との短絡は主として絶縁膜
の製法に原因して生じるものである。このように、導体
と磁性体とが短絡しているものは、読み出し電圧が低い
ことがわかつた。この短絡を防止するため、絶縁膜3の
膜厚をそれぞれ従来の1μmから3μmに増加したとこ
ろ、短絡を防止でき特性のそろつたヘツドを形成でき
二たが、磁気ギヤツプ長が広くなりすぎるため、読み出
し電圧が501tV程度となつてしまい。That is, the lower magnetic body 2 has one end on the lower magnetic body that is in contact with one end of the lower magnetic body, and the other end that is in contact with the other end of the lower magnetic body and a magnetic gap G.
an upper magnetic body 6 that faces the upper magnetic body 6 and thereby forms a magnetic circuit with a magnetic gap in part together with the lower magnetic body;
and a conductor 4 whose part passes between both magnetic bodies and crosses the magnetic circuit.
and an insulating film 3 that electrically insulates between the conductor and both magnetic materials.
and 5, which are laminated on the substrate 1 using thin film technology. A magnetic head having such a structure is manufactured in the following steps. (1) A different plate 1 is prepared, a magnetic film such as permalloy is formed on one surface of the plate by vapor deposition, sputtering, plating, etc., and this is formed into a lower magnetic body 2 of a predetermined shape using photolithography technology. (2
) An insulating film 3 made of SiO2, At203, Si3N4, etc. is formed on the lower magnetic body 2 and the substrate 1 by vapor deposition, sputtering, or the like. (3) At, Cu,
A conductor film of Au or the like is formed and molded into a desired shape to obtain the conductor 4. (4) sio2, At on a predetermined location of the conductor film 4
An insulating film 5 made of 2o3, si3N4, etc. is formed. (
5) Remove the insulating film 3 from the portions of the lower magnetic body 2 that should come into contact with the upper magnetic body 6. (6) Upper magnetic body 6 and lower magnetic body 2
Formed in the same manner as. When measuring the magnetic properties of the magnetic head thus manufactured, it was found that the read voltage value varied by about 6 times from 50 μV to 300 μV. So, when we investigated the cause of this, we found that
As shown in FIG. 2, which shows the cross section of AA'f) in FIG. I found out that there are some. In a thin film forming method using a vacuum, the film is deposited from above the pattern, so that the film thickness at the stepped portion may become small or no film may be formed. Therefore, short circuits between the conductor and the magnetic material are mainly caused by the manufacturing method of the insulating film. In this way, it was found that the read voltage was low when the conductor and the magnetic material were short-circuited. In order to prevent this short circuit, the thickness of each insulating film 3 was increased from the conventional 1 μm to 3 μm, which made it possible to prevent short circuits and form a head with uniform characteristics.
On the other hand, since the magnetic gap length becomes too wide, the read voltage becomes about 501 tV.
絶縁膜を厚くできないことがわかつた。本発明の目的は
、上記した従来技術の欠点をなくした、即ち絶縁膜の膜
厚を増加させずに、導体ンど磁性体との短絡を防止した
磁気ヘツド形成方法を提供するにある。It turned out that it was not possible to make the insulating film thicker. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a magnetic head that eliminates the drawbacks of the prior art described above, that is, prevents short circuits between conductors and magnetic materials without increasing the thickness of the insulating film.
かかる目的を奏する本発明磁気ヘツド形成方法の特徴と
するところは、少なくとも下部磁性体と導体との間の絶
縁膜を、有機シリコン化合物を塗5布後熱処理すること
に得られるSiO2膜により形成した点にある。A feature of the magnetic head forming method of the present invention that achieves this purpose is that the insulating film between at least the lower magnetic material and the conductor is formed of an SiO2 film obtained by applying an organic silicon compound and then heat-treating it. At the point.
有機シリコン化合物として、テトラアルコキシシランの
20%のエチルアルコール溶液を利用した。A 20% ethyl alcohol solution of tetraalkoxysilane was used as the organosilicon compound.
これの熱処理条件を定めるため、実験に先だ3つて示差
熱、および加熱減量曲線を求めることにした。100℃
で10分乾燥した試料について10℃/分の昇温速度で
測定した結果を第3図に示す。In order to determine the heat treatment conditions for this, it was decided to obtain three differential heat values and a heating loss curve prior to the experiment. 100℃
Figure 3 shows the results of measurements taken at a heating rate of 10°C/min on samples dried for 10 minutes.
この図から、310℃から発熱があり、テトラアルコキ
シシランの第1の熱分解反応が起り、約400℃で再分
解が起ることがわかつた。この結果から、熱処理温度を
450℃にした。基板上に下部磁性体パターンを形成し
た試料にテトラアルコキシシラン2001)のエチルア
ルコール溶液を、ホトレジストスピンナーで回転塗布し
、450℃で1時間熱処理して得られた絶縁膜3を用い
た磁気ヘツドを第4図に示す。From this figure, it was found that heat generation occurred from 310°C, the first thermal decomposition reaction of the tetraalkoxysilane occurred, and re-decomposition occurred at about 400°C. Based on this result, the heat treatment temperature was set to 450°C. An ethyl alcohol solution of tetraalkoxysilane 2001) was spin-coated on a sample with a lower magnetic pattern formed on the substrate using a photoresist spinner, and then heat-treated at 450°C for 1 hour. It is shown in Figure 4.
このようにして得られた絶縁膜は、溶液の粘性によつて
段差部の斜面にも形成され、従来の真空を利用して形成
した絶縁膜の場合のような欠点は生じない。また、場合
によつては第5図に示すよう下部磁性体2の側面がひさ
し状にエツチングされた形状となるものがあるが、この
場合にも本発明によれば溶液の粘性によつてひさしの中
をSiO2膜でうめることができる。この方法によつて
、下部磁性体2と導体4との短絡を防止したところ、そ
れまで読み出し電圧が50〜300μまでばらついたも
のが、280±20μVの範囲におさえることができる
ようになつた。The insulating film thus obtained is also formed on the slopes of the stepped portions due to the viscosity of the solution, and does not suffer from the drawbacks of conventional insulating films formed using vacuum. In some cases, as shown in FIG. 5, the side surface of the lower magnetic body 2 may be etched in the shape of a canopy, but in this case, according to the present invention, the canopy is etched due to the viscosity of the solution. The inside can be filled with a SiO2 film. By using this method to prevent a short circuit between the lower magnetic body 2 and the conductor 4, the read voltage, which had previously varied from 50 to 300 μV, was now able to be suppressed to a range of 280±20 μV.
また、磁気ギヤツプ長は、これまでのものに比べて0.
1〜0.15μm程度しか増大しないので、磁気特性の
低下は認められないという効果があることがわかつた。
有機シリコン化合物として、テトラアルコキシシラン以
外の表1に示す8種類のアルコール溶液について、塗布
膜の効果を検討した。Also, the magnetic gap length is 0.
It was found that since the increase was only about 1 to 0.15 μm, no deterioration in magnetic properties was observed.
As organic silicon compounds, the effects of coating films were investigated using eight types of alcohol solutions shown in Table 1 other than tetraalkoxysilane.
その結果、物質や含有量によつて熱処理条件の最適値が
変わるが、いずれの場合にも、磁気ヘツドの特性のばら
つきをおさえることができ、その効果を確認した。本発
明によれば、これまで磁気ヘツドの特性がばらつく最大
の原因となつていた、磁性体と導体との短絡を防止でき
るので、特性のばらつきを従来の1/3〜1/5に減少
できるという効果がある。As a result, although the optimum values of heat treatment conditions vary depending on the substance and content, in any case, it was possible to suppress variations in the characteristics of the magnetic head, and this effect was confirmed. According to the present invention, it is possible to prevent short circuits between the magnetic material and the conductor, which has until now been the biggest cause of variations in the characteristics of magnetic heads, so the variations in properties can be reduced to 1/3 to 1/5 of the conventional level. There is an effect.
以下は、下部磁性体と導体との間の絶縁膜を有機シリコ
ン化合物の溶液を用いて形成する場合について説明した
が、導体と上部磁性体との間の絶縁膜についても同様に
適用することができる。The following describes the case where the insulating film between the lower magnetic material and the conductor is formed using an organic silicon compound solution, but the same can be applied to the insulating film between the conductor and the upper magnetic material. can.
第1図は本発明を適用しようとする薄膜磁気ヘツドの斜
視図、第2図は、第1図のAN断面図、第3図は、テト
ラアルコキシシラン溶液を用いた場合の熱処理条件の検
討結果、第4図および第5図は、段差部にSiO2が堆
積することを示すモデル図。
1・・・基板、2・・・下部磁性体、3・・・絶縁体、
4・・・導体、5・・・絶縁体、6・・・上部磁性体。Figure 1 is a perspective view of a thin film magnetic head to which the present invention is applied, Figure 2 is a sectional view of AN in Figure 1, and Figure 3 is the result of examining heat treatment conditions when using a tetraalkoxysilane solution. , FIG. 4, and FIG. 5 are model diagrams showing that SiO2 is deposited on the stepped portion. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Lower magnetic body, 3... Insulator,
4...Conductor, 5...Insulator, 6...Upper magnetic body.
Claims (1)
一端に接し他端は下部磁性体の他端と磁気ギャップを介
して対向し、これによつて下部磁性体と共に一部に磁気
ギャップを有する磁気回路を形成する上部磁性体と、一
部が両磁性体間を通り磁気回路と交差する所定の巻回数
の導体と、導体と両磁性体間を絶縁する絶縁膜とを具備
し、これらが薄膜技術により基板上に積層形成されるも
のにおいて、下部磁性体と導体との間に介在する絶縁膜
を、下部磁性体及び基板上に有機シリコン化合物の溶液
を塗布した後加熱することによつて生成するSiO_2
膜で形成したことを特徴とする磁気ヘッド形成方法。1. A lower magnetic body, one end of which is in contact with one end of the lower magnetic body, and the other end of which is opposed to the other end of the lower magnetic body through a magnetic gap, whereby a part of the lower magnetic body is magnetically attached to the lower magnetic body. It includes an upper magnetic body that forms a magnetic circuit with a gap, a conductor with a predetermined number of turns that partially passes between the two magnetic bodies and crosses the magnetic circuit, and an insulating film that insulates the conductor and both magnetic bodies. , in which these are layered on a substrate using thin film technology, the insulating film interposed between the lower magnetic material and the conductor is heated after applying a solution of an organic silicon compound on the lower magnetic material and the substrate. SiO_2 produced by
A method for forming a magnetic head characterized in that it is formed of a film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10990376A JPS595966B2 (en) | 1976-09-16 | 1976-09-16 | Magnetic head formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10990376A JPS595966B2 (en) | 1976-09-16 | 1976-09-16 | Magnetic head formation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5336214A JPS5336214A (en) | 1978-04-04 |
JPS595966B2 true JPS595966B2 (en) | 1984-02-08 |
Family
ID=14522067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10990376A Expired JPS595966B2 (en) | 1976-09-16 | 1976-09-16 | Magnetic head formation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS595966B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01122774U (en) * | 1988-02-12 | 1989-08-21 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998316A (en) * | 1982-11-26 | 1984-06-06 | Sharp Corp | Manufacture of magnetic thin film head |
JPS63170375U (en) * | 1987-04-28 | 1988-11-07 |
-
1976
- 1976-09-16 JP JP10990376A patent/JPS595966B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01122774U (en) * | 1988-02-12 | 1989-08-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS5336214A (en) | 1978-04-04 |
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