JPS6246411A - Production of thin film magnetic head - Google Patents

Production of thin film magnetic head

Info

Publication number
JPS6246411A
JPS6246411A JP18309285A JP18309285A JPS6246411A JP S6246411 A JPS6246411 A JP S6246411A JP 18309285 A JP18309285 A JP 18309285A JP 18309285 A JP18309285 A JP 18309285A JP S6246411 A JPS6246411 A JP S6246411A
Authority
JP
Japan
Prior art keywords
insulator
layer
magnetic
magnetic head
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18309285A
Other languages
Japanese (ja)
Inventor
Hideto Sano
佐野 秀人
Shuzo Abiko
安彦 修三
Hiroichi Goto
博一 後藤
Masakazu Kuhara
正和 久原
Shinichi Inoue
真一 井上
Hisanori Hayashi
林 久範
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Electronics Inc
Original Assignee
Canon Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Electronics Inc filed Critical Canon Electronics Inc
Priority to JP18309285A priority Critical patent/JPS6246411A/en
Publication of JPS6246411A publication Critical patent/JPS6246411A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To stabilize a magnetic conversion characteristic by removing only the 2nd insulator except the 1st insulator among insulator layers constituting a magnetic gap part, then forming an upper magnetic material layer by film formation and constituting part of the magnetic gap of the 1st insulator. CONSTITUTION:The front magnetic gap is formed of the insulator layers 2, 4 by making combination use of wet etching and dry etching. First, the insulator layer 2 is completely etched by dry etching, then the insulator layer 4 is completely removed by dry etching except a slight thickness. The magnetic gap 7 is formed at the point of the time when the insulator layer 4 is thoroughly removed by wet etching. The insulator layer 7 is constituted by using SiO as the 1st insulator and the insulator layer 4 is constituted by using Al2O3 or SiO2 as the 2nd insulator. The accuracy of a gap width is thus stabilized and the process for production is made easy, by which the magnetic conversion characteristic is stabilized.

Description

【発明の詳細な説明】 [技術分野] 本発明は薄膜磁気ヘッドの製造方法、さらに詳細には下
部磁性層」二に絶縁層を介して導′if層を形成しその
ヒに」二部磁性層を成膜して成る薄膜磁気ヘッドの製造
方法に関する。
[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for manufacturing a thin-film magnetic head, and more particularly, to a lower magnetic layer, a conductive layer is formed through an insulating layer, and a two-part magnetic layer is formed on the lower magnetic layer through an insulating layer. The present invention relates to a method of manufacturing a thin film magnetic head formed by forming layers.

[従来技術・] 従来このような薄膜磁気ヘッドは第1図のような構成と
なっている。同図では磁気ヘッドはバイアスライン付き
の三巻型薄膜磁気へ一2ドとして図示されている。
[Prior Art] Conventionally, such a thin film magnetic head has a structure as shown in FIG. In the figure, the magnetic head is shown as a three-wound thin film magnetic head with a bias line.

このような磁気ヘッドは次のようにして製造されている
。即ち磁気ヘッドの磁気回路の一部を形成する下部磁性
層としての磁性体基板6.ヒに導電性の良い金属を蒸着
、電着、スパッタ等の方法を用いて付着させ導電層5を
成膜しフォトエツチング技術を用いて所定のパターンに
形成する。その上に絶縁体層4を成膜し、続いてその上
に導電層3を成膜パターン形成する。またその上に絶縁
体層2を形成する。このように形成された導電層5はバ
イアス線に、また導電層3は信号用コイルにそれぞれ用
いられる。
Such a magnetic head is manufactured as follows. That is, a magnetic substrate 6 serving as a lower magnetic layer forming a part of the magnetic circuit of the magnetic head. A conductive layer 5 is formed by depositing a highly conductive metal using a method such as vapor deposition, electrodeposition, or sputtering, and is formed into a predetermined pattern using a photoetching technique. An insulating layer 4 is formed thereon, and then a conductive layer 3 is patterned thereon. Further, an insulator layer 2 is formed thereon. The conductive layer 5 thus formed is used for a bias line, and the conductive layer 3 is used for a signal coil.

ここで絶縁体層2.4を介して導電層3.5の一部分を
覆うようにパーマロイ等の材質から成る上部磁性体層l
を蒸着、電着、スパッタ等の成膜方法及びフォトエツチ
ング技術を用いて形成し薄n9! 81気ヘツドを構成
する。
Here, an upper magnetic layer l made of a material such as permalloy is formed so as to cover a part of the conductive layer 3.5 via the insulating layer 2.4.
is formed using film-forming methods such as evaporation, electrodeposition, and sputtering, as well as photoetching technology to form a thin n9! It constitutes an 81 air head.

このような薄膜磁気へ一2ドにおいて磁気ギャップ7を
形成するために絶縁体層2を成膜形成した後フロント部
の絶縁体層2.4を下部磁性体基板6までウェットまた
はドライエツチングにより取り除く。その、ヒに磁気ギ
ャップ7として絶縁体層を成膜形成しその後上部磁性体
層lを形成する。
After forming the insulating layer 2 to form the magnetic gap 7 in such a thin film magnetic field, the insulating layer 2.4 at the front part is removed by wet or dry etching down to the lower magnetic substrate 6. . Then, an insulating layer is formed as a magnetic gap 7, and then an upper magnetic layer 1 is formed.

このような方法で磁気ヘッドを製造する時、絶縁体層2
.4を下部磁性体基板6までエツチングする場合ドライ
エツチングを用いると、下部磁性体基板6の゛表面まで
アタックされるために基板表面が荒れて凹凸ができてし
まうという欠点があ1  る、またウェットエツチング
を用いる場合にはエツチング溶液により同様に基板表面
がアタック□ 1  され、また絶縁体層2.4にサイドエツチングが
1・2□、6.工(7) −j−/ヶ7ヶ。−ヵよよ4
34ワギヤツプ7を成膜形成しても基板表面が荒れてい
るのでギャップ精度が悪化し、その結果磁気変換   
1:特性が不安定になる等の欠点があった。
When manufacturing a magnetic head using this method, the insulator layer 2
.. When dry etching is used to etch the substrate 4 down to the lower magnetic substrate 6, there is a disadvantage that the surface of the lower magnetic substrate 6 is attacked, making the substrate surface rough and uneven. When etching is used, the substrate surface is similarly attacked □ 1 by the etching solution, and side etching is performed on the insulator layer 2.4 by 1.2 □, 6. (7) -j-/7 pieces. -Kayoyo 4
Even if a 34-way gap 7 is formed, the gap accuracy deteriorates because the substrate surface is rough, resulting in poor magnetic conversion.
1: There were drawbacks such as unstable characteristics.

[11的]11′ 従って本発明の目的は、上述したような従来   1:
1・ の欠点を除去するために成されたもので、磁気   :
ギャップを精度良く形成し、安定した磁気変換特性が得
られる薄膜磁気ヘッドの製造方法を提供す:。
[11th point] 11' Therefore, the object of the present invention is to solve the above-mentioned conventional problems 1:
1. This was done to eliminate the drawbacks of magnetic:
Provided is a method for manufacturing a thin film magnetic head in which gaps can be formed with high precision and stable magnetic conversion characteristics can be obtained.

ることを目的とする。               
1□ [発明の構成] 本発明はこの目的を達成するために磁性体基板」二に第
1の絶縁体から成る絶縁層、導電層及び第2の絶縁体か
ら成る絶縁層を順次成膜形成し、第   □1の絶縁体
を残して第2の絶縁体のみ除去し、その後上部磁性層を
成膜し、前記第1の絶縁体によ   □る磁気ギャップ
部を構成するようにした。
The porpose is to do.
1□ [Structure of the Invention] In order to achieve this object, the present invention provides a magnetic substrate, in which an insulating layer made of a first insulator, a conductive layer, and an insulating layer made of a second insulator are sequentially formed. Then, only the second insulator was removed leaving the first insulator □, and then an upper magnetic layer was formed, so that a magnetic gap portion □ was formed by the first insulator.

[実施例] 次に第2図及び第3図を参照して本発明による磁気ヘッ
ドの製造方法を説明する。
[Example] Next, a method of manufacturing a magnetic head according to the present invention will be described with reference to FIGS. 2 and 3.

まず第2図に図示したように、鏡面ラップされた磁性体
基板6の表面に磁気ギャップ層とな   □□  るS
iO等の材質から成る絶縁体層7を蒸着。
First, as shown in FIG. 2, a magnetic gap layer is formed on the surface of the mirror-wrapped magnetic substrate 6.
An insulator layer 7 made of a material such as iO is deposited.

: 、わ、 l’<y p’4rorJ:、nlJヵア
□いアラよオ、。
: , Wow, l'<y p'4rorJ:, nlJ kaa □ It's ok.

□ その上にバイアス線となる導電体層5を成膜し、□  
フォトエンチング技術を用いて所定のパターンに形成す
る。その上に絶縁体層4を成膜し、続いて信号コイルと
なる導電体層3を成膜パターン形成する。続いてその上
に絶縁体層2を成膜し、フロント磁気ギャップ形成工程
に移る。
□ A conductive layer 5 that will become a bias line is formed on it, and □
A predetermined pattern is formed using photo-etching technology. An insulator layer 4 is formed thereon, and then a conductor layer 3 that will become a signal coil is patterned. Subsequently, an insulator layer 2 is formed thereon, and the process moves to a front magnetic gap forming step.

このフロント磁気ギャップは第3図に図示したように絶
縁体層2.4をウェットエツチングとドライエツチング
を併用して形成される。すべてウェットエツチングで行
なわず、ドライエツチングを併用するのは、ステップカ
バレージを向上させるためである。まずドライエツチン
グにて絶縁体層2をすべてエツチングし、絶縁体層4を
0.5gm程度残してドライエツチングにて取り除く、
続いて残した絶縁体層4をウェットエツチングによりす
べて除去する。絶縁体層4を 0.5pLm残す理由は
、ドライエツチング時にSiO2の結晶粒界等のエツチ
ング不均一性のため凹凸が発生し絶縁体層である磁気ギ
ャップ7がアタックされ   1□ ないようにこの凹凸より若干多めの絶縁体層4を   
:残すためである。                
 □このウェット′エツチングにより絶縁体層4がす 
  □べて取り除かれた時点で磁気ギャップ7が形成さ
   1□ れる、この時絶縁体層4.7に対してウェット   □
□ エツチングによる選択性が必要である。このよう   
□にウェットエツチングをすれば絶縁体層4が凹凸にな
っていても、絶縁体層7である磁気ギャップは選択性が
あるため平滑な膜が得られる0次にその上に上部磁性体
層lを成膜して薄Il!Jrm気ヘッドを完成させる。
The front magnetic gap is formed by wet etching and dry etching the insulator layer 2.4 as shown in FIG. The reason why dry etching is used in combination with wet etching instead of wet etching is to improve step coverage. First, the insulator layer 2 is completely etched by dry etching, and the insulator layer 4 is removed by dry etching, leaving about 0.5 gm of the insulator layer 4.
Subsequently, the remaining insulator layer 4 is completely removed by wet etching. The reason why 0.5 pLm of the insulating layer 4 is left is that unevenness occurs during dry etching due to etching non-uniformity such as crystal grain boundaries of SiO2, and this unevenness is created to prevent the magnetic gap 7, which is the insulating layer, from being attacked. Slightly more insulator layer 4
: To leave it behind.
□This wet etching removes the insulator layer 4.
□A magnetic gap 7 is formed when all 1□ is removed, and at this time, the insulator layer 4.7 is wetted.
□ Selectivity by etching is required. like this
If wet etching is performed on □, even if the insulator layer 4 is uneven, a smooth film can be obtained because the magnetic gap, which is the insulator layer 7, is selective. Thin Il! Complete the Jr Ki head.

この磁気ギャップを構成する絶縁体はSiO単体でも良
くまたSiOとSiO2を組み合わせSiO2の絶縁層
4を成膜しても良い、このようにして製造された磁気ギ
ャップは、SiOの表面の荒れも少なくギャップ精度が
安定する。
The insulator constituting this magnetic gap may be SiO alone, or may be a combination of SiO and SiO2 to form an insulating layer 4 of SiO2.The magnetic gap manufactured in this way has less roughness on the SiO surface. Gap accuracy becomes stable.

上記実施例では、第1の”絶縁体としてSiOを用いて
絶縁体層7を、また第2の絶縁体としてSiO2を用い
て絶縁体層4を構成したが、第1.第2の絶縁体はSi
O,SiO2に限定されるものではなく、第1.第2の
絶縁体どうしで選択エツチングを行なえばよい6例えば
第1.第2の絶縁体としてそれぞれSiO,AJ220
3+又はTiN、SiO2等が考えられる。
In the above embodiment, the insulator layer 7 was formed using SiO as the first insulator, and the insulator layer 4 was formed using SiO2 as the second insulator. is Si
It is not limited to O, SiO2, and the first. For example, selective etching may be performed between the second insulators. SiO, AJ220 as the second insulator, respectively
3+, TiN, SiO2, etc. are considered.

[効 果] 以上説明したように本発明によれば磁気ギャップ部を構
成する絶縁層のうち第1の絶縁体を残して第2の絶縁体
のみ除去し、その後上部磁性体層を成膜形成し、磁気ギ
ャップの一部が第1の絶縁体により構成されているので
ギャップ幅の精度が安定し製造工程が容易になり、安定
した磁気変換特性を有する薄膜磁気ヘッドが得られる。
[Effect] As explained above, according to the present invention, only the second insulator is removed while leaving the first insulator out of the insulating layer constituting the magnetic gap portion, and then the upper magnetic layer is formed. However, since a part of the magnetic gap is constituted by the first insulator, the accuracy of the gap width is stabilized, the manufacturing process is facilitated, and a thin film magnetic head having stable magnetic conversion characteristics can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の薄膜磁気ヘッドの構成を示す断面図、第
2図及び第3図は本発明による磁気ヘッドの製造方法を
示す断面図である。 ■・・・上部磁性体層  2.4・・・絶縁体層3・・
・信号コイル   5・・・バイアス線6・・・磁性体
基板  7・・・磁気ギャップ嬉1図
FIG. 1 is a cross-sectional view showing the structure of a conventional thin-film magnetic head, and FIGS. 2 and 3 are cross-sectional views showing a method of manufacturing a magnetic head according to the present invention. ■...Top magnetic layer 2.4...Insulator layer 3...
・Signal coil 5...Bias wire 6...Magnetic substrate 7...Magnetic gap Figure 1

Claims (1)

【特許請求の範囲】 1)下部磁性層上に絶縁層を介して導電層を形成しその
上に上部磁性層を成膜して成る薄膜磁気ヘッドの製造方
法において、前記下部磁性層上に第1の絶縁体から成る
絶縁層、導電層及び第2の絶縁体から成る絶縁層を順次
成膜形成し、前記第1の絶縁体を残して第2の絶縁体の
み除去し、その後上部磁性層を成膜し、前記第1の絶縁
体により磁気ギャップ部を構成するようにしたことを特
徴とする薄膜磁気ヘッドの製造方法。 2)前記第1の絶縁体がSiO、第2の絶縁体がAl_
2O_3またはSiO_2から成ることを特徴とする特
許請求の範囲第1項に記載の薄膜磁気ヘッドの製造方法
[Claims] 1) A method for manufacturing a thin film magnetic head comprising forming a conductive layer on a lower magnetic layer via an insulating layer and forming an upper magnetic layer thereon, wherein a conductive layer is formed on the lower magnetic layer. An insulating layer made of one insulator, a conductive layer, and an insulating layer made of a second insulator are sequentially formed, and only the second insulator is removed leaving the first insulator, and then an upper magnetic layer is formed. A method for manufacturing a thin-film magnetic head, characterized in that the first insulator constitutes a magnetic gap portion. 2) The first insulator is SiO, and the second insulator is Al_
2. The method of manufacturing a thin film magnetic head according to claim 1, wherein the thin film magnetic head is made of 2O_3 or SiO_2.
JP18309285A 1985-08-22 1985-08-22 Production of thin film magnetic head Pending JPS6246411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18309285A JPS6246411A (en) 1985-08-22 1985-08-22 Production of thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18309285A JPS6246411A (en) 1985-08-22 1985-08-22 Production of thin film magnetic head

Publications (1)

Publication Number Publication Date
JPS6246411A true JPS6246411A (en) 1987-02-28

Family

ID=16129618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18309285A Pending JPS6246411A (en) 1985-08-22 1985-08-22 Production of thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS6246411A (en)

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