JPS59104718A - Production of thin film magnetic head - Google Patents
Production of thin film magnetic headInfo
- Publication number
- JPS59104718A JPS59104718A JP21385782A JP21385782A JPS59104718A JP S59104718 A JPS59104718 A JP S59104718A JP 21385782 A JP21385782 A JP 21385782A JP 21385782 A JP21385782 A JP 21385782A JP S59104718 A JPS59104718 A JP S59104718A
- Authority
- JP
- Japan
- Prior art keywords
- organic resin
- film
- thickness
- layer
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は薄膜磁気ヘッドの製造方法に関し、特に有機樹
脂層間絶縁層(以下、「有機樹脂層」という。)の形成
工程を改良した薄膜磁気ヘッドの製造方法に閂する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for manufacturing a thin-film magnetic head, and in particular to a thin-film magnetic head with improved formation process of an organic resin interlayer insulating layer (hereinafter referred to as "organic resin layer"). The method of manufacturing is explained.
第1図は本山1o人が先に拐?シた薄膜磁気ヘッドの有
機樹脂層形成1方法を示す図であり、この方法は表面に
凸凹を有する基住上に平坦性の良い塗布被膜を形成する
ものである。すなわち、第1図(a)に示す如く基板1
上に導体配線2を形成した基)体に、第1図(b)に示
す如く有機樹脂層3を施す。In Figure 1, Motoyama 10 people were kidnapped first? 1 is a diagram illustrating a method for forming an organic resin layer of a thin-film magnetic head; this method forms a coating film with good flatness on a substrate having an uneven surface; FIG. That is, as shown in FIG. 1(a), the substrate 1
An organic resin layer 3 is applied to the substrate on which the conductor wiring 2 is formed, as shown in FIG. 1(b).
この有機樹脂層3の膜厚は予定厚さより幾分厚くする。The thickness of this organic resin layer 3 is made somewhat thicker than the planned thickness.
次に、第1図(C)に示す如く、前記有機樹脂層δ上に
ポジ型ホトレジスト等の平坦性の良い被膜4を形成し、
表面をγり平坦化するために熱処。Next, as shown in FIG. 1(C), a film 4 with good flatness, such as a positive type photoresist, is formed on the organic resin layer δ,
Heat treated to flatten the surface.
理を加え、第1図(d)に示す如き形状とする。そして
、前記被膜4と有機樹脂層3とを同程度のエツチング速
度でイオンエツチングすることにより第1図(、)に示
した如き平坦な有枦樹脂層表面3′を得るものである。Then, the shape is made as shown in FIG. 1(d). Then, the coating film 4 and the organic resin layer 3 are ion-etched at the same etching rate to obtain a flat surface 3' of the resin layer as shown in FIG.
しかしながら、上述の方法においては、エツチング条件
が変動すると前記被膜4と有機樹脂層3とのエツチング
速度に差が生じ、平坦性が悪化するほか、処理工程が長
い等解決すべき問題を有していた。However, in the above method, if the etching conditions vary, there will be a difference in the etching speed between the coating film 4 and the organic resin layer 3, which will deteriorate the flatness and have other problems that need to be solved, such as a long processing step. Ta.
本発明は上記事情に鑑みてなされたもので、その目的と
するところは、従来の薄膜磁気ヘッドの製造方法におけ
る上述の如き問題を解決し、層間絶縁層に有機樹脂層を
用いる薄膜磁気−・ラドの該有機樹脂層表面の平坦性を
向上させることにより平坦性の良い上部磁性体形成を可
能とする薄膜磁気ヘッドの製造方法を提供するごとにあ
る。The present invention has been made in view of the above-mentioned circumstances, and its purpose is to solve the above-mentioned problems in the conventional thin-film magnetic head manufacturing method, and to provide a thin-film magnetic head manufacturing method using an organic resin layer as an interlayer insulating layer. It is an object of the present invention to provide a method for manufacturing a thin film magnetic head, which makes it possible to form an upper magnetic body with good flatness by improving the flatness of the surface of the organic resin layer of RAD.
本発明の要点は、絶縁膜をゼする基板上に下部磁性体、
ギャップ材、導体コイル、有機樹脂層、。The gist of the present invention is that a lower magnetic material is placed on a substrate on which an insulating film is formed.
Gap material, conductor coil, organic resin layer.
上部磁性体および保護層を順次形成する薄膜磁気ヘッド
の卯遣方法において、前記有機樹脂層の膜厚を所定の平
坦度が得られる厚さとする工程を有する点にある。A method for manufacturing a thin film magnetic head in which an upper magnetic material and a protective layer are sequentially formed includes the step of setting the thickness of the organic resin layer to a thickness that provides a predetermined flatness.
以下、本発明の実施例を図面に基づいて詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
第2図(、)〜(e)はポリイミド系有機樹脂層(以下
、単に「有機樹脂層」という。)の平坦化ブロセズを示
すものである。まず、第21W (a)に示すように、
セラミック基板δ上に下地アルミナ絶縁膜6、下部磁性
体7、ギャップ材8、導体コイル9を形成する。次に、
第2図(b)に示すように有機樹脂Wj10を形成する
。この有機樹脂層10は有機樹脂をス(1ピン塗布し熱
硬化させることにより形成する。FIGS. 2(a) to 2(e) show the planarization process of a polyimide organic resin layer (hereinafter simply referred to as "organic resin layer"). First, as shown in 21st W (a),
A base alumina insulating film 6, a lower magnetic material 7, a gap material 8, and a conductor coil 9 are formed on a ceramic substrate δ. next,
An organic resin Wj10 is formed as shown in FIG. 2(b). This organic resin layer 10 is formed by applying an organic resin (one pin) and curing it with heat.
その塗布膜厚は、導体コイル(以下、単に「コイル」と
いう。)上絶縁膜の平坦度が0.1μm程度になるよう
に決められる。例えば、コイル膜厚1.5μm 、コイ
ル幅6μm、コイル間隔3μmの一1場合、塗布膜厚は
第3図に示すようになり、熱硬化後の有機樹脂膜厚を6
μm程度にしなければならない。なお、この塗布膜厚は
、コイル形状、コ。The coating film thickness is determined so that the flatness of the insulating film on the conductor coil (hereinafter simply referred to as "coil") is approximately 0.1 μm. For example, if the coil film thickness is 1.5 μm, the coil width is 6 μm, and the coil spacing is 3 μm, the coating film thickness will be as shown in Figure 3, and the organic resin film thickness after thermosetting will be 6 μm.
It must be on the order of μm. Note that this coating film thickness depends on the coil shape.
イル間隔、有機樹脂粘度、樹脂量等により変化するが、
必要な平坦度が得られるまで厚く塗布する。Iことにな
る。また、この塗布は必ずしも1度に行わなくても良く
、何回かに分けて行っても良い。。It varies depending on the oil spacing, organic resin viscosity, resin amount, etc.
Apply thickly until desired flatness is achieved. It's going to happen. Moreover, this application does not necessarily have to be carried out at once, but may be carried out in several parts. .
次に、第2図(0)に示すように有機樹脂層10を最終
必要膜厚より薄くなるまで除去する。ここで最終必要膜
厚より薄くするのは、後工程で化学エツチングする際に
安定したテーパ角を得るために再塗布を行うためである
。この有機樹脂層除去は、イオンミリングで行うが、通
常用いられるアルゴンガスに酸素を添加した状態で行う
のが望ましい。Next, as shown in FIG. 2(0), the organic resin layer 10 is removed until it becomes thinner than the final required thickness. The reason why the film is made thinner than the final required thickness is that recoating is performed to obtain a stable taper angle during chemical etching in a later process. This organic resin layer removal is carried out by ion milling, but it is desirable to carry out the removal in a state in which oxygen is added to the commonly used argon gas.
第4図に酸素の添加量とエツチングレートとの関)係を
示した。酸素100%の場合はアルゴンガス100%の
場合に比べて約10倍のエツチングレートが得られる。FIG. 4 shows the relationship between the amount of oxygen added and the etching rate. In the case of 100% oxygen, an etching rate approximately 10 times higher than that in the case of 100% argon gas can be obtained.
有機樹脂Wi 10を酸素イオンミリングにより最終必
要膜厚より薄くした後、イオン照射を受けた表面にプラ
ズマアッシャ−処理を施して有機樹脂イオンダメージ層
を除去し、第2図((1)に示すように有機樹脂11を
再度塗布、熱硬化させて必要膜厚を得る。酸素イオンミ
リングを用いた場合は、。After making the organic resin Wi 10 thinner than the final required film thickness by oxygen ion milling, the ion-irradiated surface was subjected to plasma asher treatment to remove the organic resin ion damage layer, and the resulting film was thinned as shown in Figure 2 ((1)). Apply the organic resin 11 again and heat cure it to obtain the required film thickness.If oxygen ion milling is used.
アルゴンイオンミリングを用いた場合に比べて前記表面
ダメージが小さく、プラズマアッシャ−処理が短時間で
済むという効果もあり、コイル−Eの有機樹脂層を必要
以−Fに減少させたり、コイルを露出させたりすること
もない。なお、有機樹脂層11を付加することにより、
表面の状態が良化し、次工程で塗布されるホトレジスト
の密着性が向上する。Compared to the case of using argon ion milling, the surface damage is smaller and the plasma asher treatment can be completed in a shorter time. I won't let you do anything. Note that by adding the organic resin layer 11,
The surface condition improves, and the adhesion of the photoresist applied in the next step improves.
次に、有機樹脂層11上にホトレジストを塗布、パター
ン焼付後エツチングを行う。このエツチングはドライエ
ツチングでもウェットエツチングでも良い。この工程が
終了した時点で第2図(、)に示すような構造体が得ら
れる。ζ、の構造体に、更に、コイル、有機樹脂層、上
部磁性体、保lI!膜等を形成することにより、第5図
に示すような薄膜磁気ヘッドを得ることができる。
1)前述の如く、有機樹脂層を形成、す
る際に、所望の平坦度を得るに必要な塗布膜厚は、コイ
ル形状。Next, a photoresist is applied onto the organic resin layer 11, and after pattern baking, etching is performed. This etching may be dry etching or wet etching. At the end of this step, a structure as shown in FIG. 2 (,) is obtained. In addition to the structure of ζ, a coil, an organic resin layer, an upper magnetic material, and a holding lI! By forming a film or the like, a thin film magnetic head as shown in FIG. 5 can be obtained.
1) As mentioned above, when forming an organic resin layer, the coating thickness necessary to obtain the desired flatness is determined by the coil shape.
コイル間隔、有機樹脂粘度等の関数であり、塗布膜厚決
定に際しては、事前に、第3図に示した如き関係を把握
するのが好ましい。なお、この塗布。It is a function of coil spacing, organic resin viscosity, etc., and it is preferable to understand the relationship shown in FIG. 3 in advance when determining the coating film thickness. In addition, this application.
膜厚は、必ずしも1回の塗布により得なくても良いこと
も前述の通りである。また、酸素イオンミ。As mentioned above, the film thickness does not necessarily have to be obtained by one coating. Also, oxygen ion mi.
リングにおける酸素の混合比は適宜選択して良いことは
言うまでもない。It goes without saying that the mixing ratio of oxygen in the ring may be selected as appropriate.
以上述べた如く、本発明によれば、絶縁膜を有する基板
上に下部磁性体、ギャップ材、コイル。As described above, according to the present invention, a lower magnetic material, a gap material, and a coil are formed on a substrate having an insulating film.
有機樹脂層、上部磁性体および保護層を順次形成する薄
膜磁気ヘッドの製造方法において、前記有機樹脂層の膜
厚を所定の平坦度が得られる厚さと)する工程を含もよ
うにしたので、前記有機樹脂層上に設けられる上部磁性
体を平坦性の良いものとすることができ、安定した性能
の薄膜磁気ヘッドを製造することができるという顕著な
効果を奏するものである。
15また、厚塗りにした前記有機樹脂層を酸素イオ
ンミリングにより除去するようにすると、エツチングレ
ートが高速化できると同時に表面ダメージを低減させる
ことができるという効果がある。The method for manufacturing a thin film magnetic head in which an organic resin layer, an upper magnetic material, and a protective layer are sequentially formed includes a step of adjusting the thickness of the organic resin layer to a thickness that provides a predetermined flatness. The upper magnetic body provided on the organic resin layer can be made to have good flatness, and a remarkable effect is achieved in that a thin film magnetic head with stable performance can be manufactured.
15 Furthermore, if the thick organic resin layer is removed by oxygen ion milling, the etching rate can be increased and at the same time surface damage can be reduced.
は本発明の実施例を示す工程図、第3図は有機樹脂膜厚
と平坦度の関係の一例を示すグラフ、第1図はイオンミ
リングにおける酸素添加の効果を示すグラフ、第5図は
薄膜磁気ヘッドの断面図である0
5:セラミック基板、6:アルミナ絶縁膜、7:下部磁
性体、8:ギャップ材、9:コイル、10.11:有機
樹脂層、12i上部磁性体、13:保護膜。
特許出願人 電子計算機基本技術研究組合筒 1
図
第2図
第 3 図
ポリイミド系有機樹脂膜厚(ltm)
第 Φ 図
021n Ar (%)
第5図3 is a graph showing an example of the relationship between organic resin film thickness and flatness. FIG. 1 is a graph showing the effect of oxygen addition in ion milling. FIG. 5 is a graph showing the effect of oxygen addition in ion milling. 5: Ceramic substrate, 6: Alumina insulating film, 7: Lower magnetic material, 8: Gap material, 9: Coil, 10.11: Organic resin layer, 12i Upper magnetic material, 13: Protection film. Patent applicant: Computer Basic Technology Research Association Tsutsu 1
Figure 2 Figure 3 Polyimide organic resin film thickness (ltm) Φ Figure 021n Ar (%) Figure 5
Claims (1)
、導体フィル、有機樹脂層間絶縁層、上記磁性体および
保護層を顯次形成する薄膜磁気ヘッドの製造方法におい
て、前記有機樹脂Rj間絶縁層の膜厚を所定の平坦度が
得られる厚さとする工程を有することを特徴とする薄膜
磁気ヘッドの製造方1法。 e)前記有機樅脂層間絶R層形成工程が、所定の平坦度
の得られた有機樹脂膜を酸素イオンエツチングを用いて
必要膜厚より薄くなるまでエツチングした後、加工面変
質層の除去を行い、有機樹脂を塗布、熱硬化することに
より必要膜厚を得ることを含訃ことを特徴とする特許請
求の範囲第1項記載の薄膜磁気ヘッドの製造方法。(1) In a method for manufacturing a thin film magnetic head, in which a lower magnetic material, a gap material, a conductive fill, an organic resin interlayer insulating layer, the above-mentioned magnetic material and a protective layer are successively formed on a substrate having an insulating film, between the organic resin Rj. 1. A method for manufacturing a thin-film magnetic head, which comprises the step of adjusting the thickness of an insulating layer to a thickness that provides a predetermined flatness. e) In the step of forming an R layer with an interleaved organic resin layer, the organic resin film having a predetermined flatness is etched using oxygen ion etching until it becomes thinner than the required film thickness, and then the processed surface altered layer is removed. 2. The method of manufacturing a thin-film magnetic head according to claim 1, further comprising the steps of: obtaining a required film thickness by applying an organic resin and thermally curing the thin-film magnetic head;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21385782A JPS59104718A (en) | 1982-12-08 | 1982-12-08 | Production of thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21385782A JPS59104718A (en) | 1982-12-08 | 1982-12-08 | Production of thin film magnetic head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59104718A true JPS59104718A (en) | 1984-06-16 |
JPH0447886B2 JPH0447886B2 (en) | 1992-08-05 |
Family
ID=16646166
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21385782A Granted JPS59104718A (en) | 1982-12-08 | 1982-12-08 | Production of thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59104718A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS619816A (en) * | 1984-06-25 | 1986-01-17 | Nec Kansai Ltd | Formation of thin film magnetic head |
JPS61222010A (en) * | 1985-03-27 | 1986-10-02 | Fuji Photo Film Co Ltd | Flattening method |
JPS63257909A (en) * | 1987-04-15 | 1988-10-25 | Hitachi Ltd | Thin film magnetic head and its production |
JPS6473519A (en) * | 1987-09-16 | 1989-03-17 | Fujitsu Ltd | Production of thin film magnetic head |
-
1982
- 1982-12-08 JP JP21385782A patent/JPS59104718A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS619816A (en) * | 1984-06-25 | 1986-01-17 | Nec Kansai Ltd | Formation of thin film magnetic head |
JPS61222010A (en) * | 1985-03-27 | 1986-10-02 | Fuji Photo Film Co Ltd | Flattening method |
JPH0546612B2 (en) * | 1985-03-27 | 1993-07-14 | Fuji Photo Film Co Ltd | |
JPS63257909A (en) * | 1987-04-15 | 1988-10-25 | Hitachi Ltd | Thin film magnetic head and its production |
JPS6473519A (en) * | 1987-09-16 | 1989-03-17 | Fujitsu Ltd | Production of thin film magnetic head |
Also Published As
Publication number | Publication date |
---|---|
JPH0447886B2 (en) | 1992-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4470874A (en) | Planarization of multi-level interconnected metallization system | |
JPS5819129B2 (en) | Handout Taisouchino Seizouhouhou | |
JPS59104718A (en) | Production of thin film magnetic head | |
JPS61180458A (en) | Manufacture of semiconductor device | |
JPH0214784B2 (en) | ||
US4710264A (en) | Process for manufacturing a semiconductor arrangement | |
JPS58171877A (en) | Method of producing flatted josephson junction element | |
JPS58128012A (en) | Thin film magnetic head and its manufacture | |
JPS5877016A (en) | Production of thin film magnetic head | |
JPS5893329A (en) | Method for flattening insulating layer | |
JPS60143414A (en) | Manufacture of thin-film magnetic head | |
JPH02180052A (en) | Manufacture of semiconductor device | |
JPS59167020A (en) | Manufacturing method of semiconductor device | |
JP2517479B2 (en) | Method of manufacturing thin film magnetic head | |
JPS6248291B2 (en) | ||
JPS61154148A (en) | Manufacturing method of semiconductor device | |
JPH09198624A (en) | Combined magnetic head and its production | |
JPS61222010A (en) | Flattening method | |
JPS6116549A (en) | Manufacture of semiconductor device | |
JPH08273962A (en) | Method for manufacturing electronic device | |
JPH0372657A (en) | Surface flattening film formation method | |
JPH02278850A (en) | Manufacture of semiconductor device | |
JPS61260638A (en) | Manufacture of semiconductor device | |
JPH01192136A (en) | Manufacture of semiconductor device | |
JPH01117329A (en) | Manufacture of insulating film for thin film device |