JP2541448B2 - Thin film magnetic head and method of manufacturing the same - Google Patents
Thin film magnetic head and method of manufacturing the sameInfo
- Publication number
- JP2541448B2 JP2541448B2 JP5118003A JP11800393A JP2541448B2 JP 2541448 B2 JP2541448 B2 JP 2541448B2 JP 5118003 A JP5118003 A JP 5118003A JP 11800393 A JP11800393 A JP 11800393A JP 2541448 B2 JP2541448 B2 JP 2541448B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- photoresist
- magnetic head
- baking
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Magnetic Heads (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気ディスク等の磁気記
録装置に用いられる薄膜磁気ヘッドおよびその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used in a magnetic recording device such as a magnetic disk and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図６に従来の薄膜ヘッドの概略断面図を
示す。この薄膜ヘッドは例えば一般的には次のように製
造される。まず、Ａｌ2 Ｏ3 −ＴｉＣ基板１上にスパッ
タリング等によってアルミナ等の絶縁層２を形成し、つ
いでパーマロイなどの軟磁性体をスパッタリング、ある
いはメッキ法等によって成膜し、下部ポール層３を形成
する。その後、ギャップを形成するため、所定膜厚のア
ルミナなどの絶縁層４を形成し、ついでリアギャップ部
の不要絶縁層をエッチングにて除去する。その後、この
下部ポール３の段差を解消するため、フォトレジストを
スピンコーティング法により塗布する。その後、２５０
℃前後の加熱処理を施し、焼き締めフォトレジスト層５
を形成する。次に、剥離防止膜としてＣｒ１０、メッキ
下地膜としてＣｕ１１をスパッタリング法等によりそれ
ぞれ形成する。フォトレジストによりコイル層のパター
ン化を行い、下地膜Ｃｕ１１上にメッキ法でコイル６を
形成する。コイルパターンに用いたフォトレジストを除
去し、イオンミリング法により不要部のＣｕ，Ｃｒを除
去する。さらにコイル６による段差を解消するため、フ
ォトレジストが塗布され、前述の通り２５０℃前後の加
熱処理を施し、焼き締めフォトレジスト層５を形成す
る。その後、下部ポール層の形成と同様にして上部ポー
ル層８を形成し薄膜磁気ヘッドのトランスデューサ部を
構成する。ここで、焼き締めフォトレジストは、１）コ
イル等による段差の解消機能、２）電気絶縁性の保証機
能、３）肩部（図注Ｃ，Ｃ′で示した部分）をなだらか
にする等の機能を有している。2. Description of the Related Art FIG. 6 is a schematic sectional view of a conventional thin film head. This thin film head is generally manufactured as follows, for example. First, an insulating layer 2 such as alumina is formed on the Al 2 O 3 —TiC substrate 1 by sputtering or the like, and then a soft magnetic material such as permalloy or the like is formed by sputtering or plating to form the lower pole layer 3. To do. Then, in order to form a gap, an insulating layer 4 of alumina or the like having a predetermined thickness is formed, and then the unnecessary insulating layer in the rear gap portion is removed by etching. Then, in order to eliminate the step difference of the lower pole 3, a photoresist is applied by spin coating. Then 250
Heat treatment of about 5 ° C. and baking
To form. Next, Cr10 is formed as a peeling prevention film, and Cu11 is formed as a plating base film by a sputtering method or the like. The coil layer is patterned with photoresist, and the coil 6 is formed on the base film Cu11 by a plating method. The photoresist used for the coil pattern is removed, and unnecessary portions of Cu and Cr are removed by the ion milling method. Further, in order to eliminate the step due to the coil 6, a photoresist is applied, and as described above, a heat treatment at about 250 ° C. is performed to form a baking photoresist layer 5. After that, the upper pole layer 8 is formed in the same manner as the formation of the lower pole layer to form the transducer portion of the thin film magnetic head. Here, the baking-up photoresist has 1) a function of eliminating a step due to a coil or the like, 2) a function of guaranteeing electrical insulation, and 3) a smooth shoulder (the portion shown by C and C'in the figure). It has a function.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記の薄膜ヘ
ッドにおいて、焼き締めフォトレジストの絶縁性が低下
することにより、ヘッド素子の絶縁破壊やヘッドの出力
電圧が低下しノイズとなる場合のあることが観測され
た。そこで、焼き締めフォトレジストの絶縁性が低下す
る原因を調べるため、焼き締めフォトレジストのリーク
特性について評価した。この測定結果を表１に示す。However, in the above-mentioned thin film head, the insulation property of the baking-up photoresist is deteriorated, which may cause the breakdown of the head element or the output voltage of the head, resulting in noise. Was observed. Therefore, in order to investigate the cause of the deterioration of the insulation property of the baking-up photoresist, the leak characteristic of the baking-up photoresist was evaluated. The results of this measurement are shown in Table 1.
【０００４】[0004]
【表１】 [Table 1]
【０００５】表１に示したように、測定初期において、
５×１０-11 Ａのリーク電流値を示した試料が８０℃９
０％Ｒ．Ｈ．の吸湿処理により１桁大きいリーク電流値
となった。このように吸湿処理により焼き締めフォトレ
ジストのリーク電流値は増加し、絶縁性の低下する現象
が観測された。これは吸湿処理により焼き締めフォトレ
ジスト表面のＣ＝Ｏ基等の極性基に水分が取り込まれる
ことに起因したリーク電流値の増加と考えられた。As shown in Table 1, in the initial measurement,
The sample showing a leakage current value of 5 × 10 −11 A was 80 ° C. 9
0% R. H. Due to the moisture absorption treatment, the leak current value was increased by one digit. Thus, it was observed that the moisture absorption treatment increased the leak current value of the baking-up photoresist and decreased the insulation property. This was considered to be an increase in the leak current value due to the incorporation of water into polar groups such as C = O groups on the surface of the photoresist for baking up due to the moisture absorption treatment.
【０００６】本発明の目的は、上記従来技術の欠点に鑑
みなされたものであって、焼き締めフォトレジストの絶
縁性を向上させることにある。An object of the present invention was made in view of the above-mentioned drawbacks of the prior art, and is to improve the insulating property of the baking photoresist.
【０００７】[0007]
【課題を解決するための手段】本発明は、磁気回路をな
す下部磁性体と上部磁性体との間にコイルおよび焼き締
めフォトレジスト層が挟み込まれた構造を有する薄膜磁
気ヘッドにおいて、前記焼き締めフォトレジスト表面に
疎水層を有することを特徴とする。The present invention provides a thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit. It is characterized by having a hydrophobic layer on the photoresist surface.
【０００８】また本発明は、磁気回路をなす下部磁性体
と上部磁性体との間にコイルおよび焼き締めフォトレジ
スト層が挟み込まれた構造を有する薄膜磁気ヘッドの製
造方法において、前記焼き締めフォトレジスト層の表面
をＦを主成分とするプラズマ種を用いてプラズマ処理す
ることを特徴とする。Further, the present invention provides a method of manufacturing a thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit, wherein the baking photoresist is used. It is characterized in that the surface of the layer is plasma-treated with a plasma species containing F as a main component.
【０００９】また本発明は、磁気回路をなす下部磁性体
と上部磁性体との間にコイルおよび焼き締めフォトレジ
スト層が挟み込まれた構造を有する薄膜磁気ヘッドの製
造方法において、前記焼き締めフォトレジスト層の表面
にポリエチレン系のシランカップリング剤を塗布するこ
とを特徴とする。Further, the present invention provides a method for manufacturing a thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit. It is characterized in that a polyethylene-based silane coupling agent is applied to the surface of the layer.
【００１０】[0010]
（実施例１）図１に本発明の実施例の薄膜磁気ヘッドの
断面図を示す。この薄膜磁気ヘッドの構造を、その製造
方法と共に説明する。図２〜図５は、製造工程図であ
る。(Embodiment 1) FIG. 1 is a sectional view of a thin film magnetic head according to an embodiment of the present invention. The structure of this thin film magnetic head will be described together with its manufacturing method. 2 to 5 are manufacturing process diagrams.
【００１１】まず、Ａｌ2 Ｏ3 −ＴｉＣ基板１上にスパ
ッタリング等によってアルミナ等の絶縁層２を形成し、
ついでパーマロイなどの軟磁性体をスパッタリング、あ
るいはメッキ法等によって成膜し、下部ポール層３を形
成する。その後、ギャップを形成するため、所定膜厚の
アルミナなどの絶縁層４を形成し、ついでリアギャップ
部の不要絶縁層をエッチングにて除去する。その後、こ
の下部ポール３の段差を解消するため、フォトレジスト
をスピンコーティング法により塗布する。その後、２５
０℃前後の加熱処理を施し、焼き締めフォトレジスト層
５を形成する。以上の工程は、従来と同一工程である。First, an insulating layer 2 of alumina or the like is formed on an Al 2 O 3 —TiC substrate 1 by sputtering or the like,
Then, a soft magnetic material such as permalloy is deposited by sputtering, a plating method or the like to form the lower pole layer 3. Then, in order to form a gap, an insulating layer 4 of alumina or the like having a predetermined thickness is formed, and then the unnecessary insulating layer in the rear gap portion is removed by etching. Then, in order to eliminate the step difference of the lower pole 3, a photoresist is applied by spin coating. Then 25
A heat treatment at about 0 ° C. is performed to form a hardened photoresist layer 5. The above process is the same as the conventional process.
【００１２】その後、図２に示すように剥離防止膜とし
てＣｒ１０、メッキ下地膜としてのＣｕ１１をそれぞれ
スパッタリング法等により形成する。After that, as shown in FIG. 2, Cr10 as a peeling prevention film and Cu11 as a plating base film are formed by a sputtering method or the like.
【００１３】次に、図３に示すようにフォトレジスト１
２によりＣｕコイルパターン形成用のパターニングを行
う。Ｃｕ下地膜１１上にメッキ法でＣｕを積層して銅メ
ッキ層１３を形成する。Next, as shown in FIG.
2 is used to perform patterning for forming a Cu coil pattern. Cu is laminated on the Cu base film 11 by a plating method to form a copper plating layer 13.
【００１４】次に、図４に示すようにフォトレジスト１
２を除去する。Next, as shown in FIG.
Remove 2.
【００１５】次に、図５に示すようにイオンミリング法
により不要部のＣｒ１０，ＣＵ１１を除去する。コイル
パターンの形成された後、例えばＣＦ4 を用いたプラズ
マ処理を施す。プラズマ処理において、投入電力は３０
０Ｗ、真空度は７×１０-1Ｔｏｒｒ、処理時間は３分で
ある。次に前記したと同様に、ポジ型フォトレジストを
スピンコート法により塗布し、２５０℃前後の加熱処理
を施し、焼き締めフォトレジスト層５を形成する。この
焼き締めフォトレジスト上にも例えばＣＦ4 を用いたプ
ラズマ処理を施す。この後、図１に示すように、上部ポ
ール層８を形成し、薄膜磁気ヘッド素子となる。焼き締
めフォトレジスト上にＣＦ4 プラズマ処理をすることに
よりフォトレジスト表面にはＦが付加される。Ｆが付加
されるため、その表面エネルギーは低く、水分の取り込
み量は低くなる。この結果コイル−焼き締めフォトレジ
スト表面−上部ポールでつながれた導通路により生じた
リーク電流値は低減し、ノイズも小さくなった。Next, as shown in FIG. 5, unnecessary parts of Cr10 and CU11 are removed by ion milling. After the coil pattern is formed, plasma treatment using CF 4 , for example, is performed. In plasma processing, input power is 30
The degree of vacuum is 0 W, the degree of vacuum is 7 × 10 −1 Torr, and the processing time is 3 minutes. Then, in the same manner as described above, a positive photoresist is applied by a spin coating method, and a heat treatment at about 250 ° C. is performed to form a baking photoresist layer 5. Plasma processing using CF 4, for example, is also performed on the baking photoresist. Thereafter, as shown in FIG. 1, the upper pole layer 8 is formed to form a thin film magnetic head element. F is added to the photoresist surface by CF 4 plasma treatment on the baking photoresist. Since F is added, its surface energy is low and the amount of water taken in is low. As a result, the leakage current value caused by the conductive path connected by the coil, the surface of the photoresist for baking, and the upper pole was reduced, and the noise was also reduced.
【００１６】（実施例２）本発明の第２の実施例は焼き
締めフォトレジストの疎水層（改質層）としてポリエチ
レン系のシランカップリング剤を用いた場合である。実
施例１と同様にコイルパターンの形成された後および上
部ポールとコイルの焼き締めフォトレジスト上にポリエ
チレン系のシランカップリング剤をスピンコート法によ
り２００ｎｍ〜３００ｎｍ塗布する。極性の小さいポリ
エチレンを用いていること、ミリング処理等により荒れ
た表面が滑性となることから、水分等の取り込みは低減
される。この結果コイル−焼き締めフォトレジスト表面
−上部ポールの導通路により生じたリーク電流値は低減
し、ノイズも小さくなった。(Embodiment 2) A second embodiment of the present invention is a case where a polyethylene-based silane coupling agent is used as a hydrophobic layer (modified layer) of a baking photoresist. After the coil pattern is formed and the upper pole and the coil are baked as in Example 1, a polyethylene-based silane coupling agent is applied by spin coating to a thickness of 200 nm to 300 nm. Since polyethylene with low polarity is used and the surface roughened by milling or the like becomes slippery, the uptake of water etc. is reduced. As a result, the leakage current value caused by the conduction path between the coil, the surface of the photoresist for baking and the upper pole was reduced, and the noise was also reduced.
【００１７】[0017]
【発明の効果】本発明によれば、ＣＦ4 ，ＣＣｌ
2 Ｆ2 ，Ｃ2 Ｆ6 等のＦを主成分とするプラズマ種によ
るプラズマ処理、ポリエチレン系のシランカップリング
剤塗布により焼き締めフォトレジスト表面の極性基（Ｃ
＝Ｏ基）が減少、表面エネルギーが低くなるので、水分
の取り込み量が少なくなり、焼き締めフォトレジストの
絶縁性は向上する。According to the present invention, CF 4 , CCl
2 F 2, C 2 F 6 plasma treatment with plasma species mainly containing F such polar groups densification photoresist surface with a silane coupling agent coating of polyethylene (C
═O group) decreases and the surface energy decreases, so that the amount of moisture taken in decreases and the insulating property of the baking photoresist improves.
【００１８】本発明によりハードキュアフォトレジスト
の電気抵抗が大きくなった。このため、薄膜ヘッドのノ
イズの低減となり、歩留まりも向上した。According to the present invention, the electric resistance of the hard cure photoresist is increased. Therefore, the noise of the thin film head is reduced and the yield is improved.
【図１】本発明を説明する薄膜磁気ヘッドの概略図であ
る。FIG. 1 is a schematic view of a thin film magnetic head for explaining the present invention.
【図２】本発明を説明するための薄膜ヘッド作製工程図
である。FIG. 2 is a process drawing of a thin film head manufacturing process for explaining the present invention.
【図３】本発明を説明するための薄膜ヘッド作製工程図
である。FIG. 3 is a process drawing of a thin film head manufacturing process for explaining the present invention.
【図４】本発明を説明するための薄膜ヘッド作製工程図
である。FIG. 4 is a process drawing of a thin film head manufacturing process for explaining the present invention.
【図５】本発明を説明するための薄膜ヘッド作製工程図
である。FIG. 5 is a process drawing of a thin film head manufacturing process for explaining the present invention.
【図６】従来の薄膜ヘッドの概略図である。FIG. 6 is a schematic view of a conventional thin film head.
１ Ａｌ2 Ｏ3 −ＴｉＣ層 ２ アルミナ絶縁層 ３ 下部ポール ４ ギャップ ５ 焼き締めフォトレジスト層 ６ Ｃｕコイル ８ ポール層 ９ 疎水層 １０ スパッタＣｒ １１ Ｃｕスパッタ層1 Al 2 O 3 —TiC Layer 2 Alumina Insulating Layer 3 Lower Pole 4 Gap 5 Baking-Up Photoresist Layer 6 Cu Coil 8 Pole Layer 9 Hydrophobic Layer 10 Sputtering Cr 11 Cu Sputtering Layer
Claims (3)
の間にコイルおよび焼き締めフォトレジスト層が挟み込
まれた構造を有する薄膜磁気ヘッドにおいて、 前記焼き締めフォトレジスト表面に疎水層を有すること
を特徴とする薄膜磁気ヘッド。1. A thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit, wherein a hydrophobic layer is provided on the baking photoresist surface. A thin film magnetic head characterized in that
の間にコイルおよび焼き締めフォトレジスト層が挟み込
まれた構造を有する薄膜磁気ヘッドの製造方法におい
て、 前記焼き締めフォトレジスト層の表面をＦを主成分とす
るプラズマ種を用いてプラズマ処理することを特徴とす
る薄膜磁気ヘッドの製造方法。2. A method of manufacturing a thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit, the surface of the baking photoresist layer being formed. 2. A method of manufacturing a thin-film magnetic head, wherein the plasma treatment is performed using a plasma species containing F as a main component.
の間にコイルおよび焼き締めフォトレジスト層が挟み込
まれた構造を有する薄膜磁気ヘッドの製造方法におい
て、 前記焼き締めフォトレジスト層の表面にポリエチレン系
のシランカップリング剤を塗布することを特徴とする薄
膜磁気ヘッドの製造方法。3. A method of manufacturing a thin film magnetic head having a structure in which a coil and a baking photoresist layer are sandwiched between a lower magnetic body and an upper magnetic body forming a magnetic circuit, the surface of the baking photoresist layer being formed. A method for manufacturing a thin-film magnetic head, characterized in that a polyethylene-based silane coupling agent is applied to the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5118003A JP2541448B2 (en) | 1993-05-20 | 1993-05-20 | Thin film magnetic head and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5118003A JP2541448B2 (en) | 1993-05-20 | 1993-05-20 | Thin film magnetic head and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06333211A JPH06333211A (en) | 1994-12-02 |
| JP2541448B2 true JP2541448B2 (en) | 1996-10-09 |
Family
ID=14725653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5118003A Expired - Lifetime JP2541448B2 (en) | 1993-05-20 | 1993-05-20 | Thin film magnetic head and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2541448B2 (en) |
-
1993
- 1993-05-20 JP JP5118003A patent/JP2541448B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06333211A (en) | 1994-12-02 |
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