JPS5955064A - ホ−ル素子 - Google Patents

ホ−ル素子

Info

Publication number
JPS5955064A
JPS5955064A JP57165557A JP16555782A JPS5955064A JP S5955064 A JPS5955064 A JP S5955064A JP 57165557 A JP57165557 A JP 57165557A JP 16555782 A JP16555782 A JP 16555782A JP S5955064 A JPS5955064 A JP S5955064A
Authority
JP
Japan
Prior art keywords
hall
hall voltage
transistors
current
point contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57165557A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232795B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kiyoshi Nishimura
清 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP57165557A priority Critical patent/JPS5955064A/ja
Publication of JPS5955064A publication Critical patent/JPS5955064A/ja
Publication of JPH0232795B2 publication Critical patent/JPH0232795B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP57165557A 1982-09-22 1982-09-22 ホ−ル素子 Granted JPS5955064A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57165557A JPS5955064A (ja) 1982-09-22 1982-09-22 ホ−ル素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57165557A JPS5955064A (ja) 1982-09-22 1982-09-22 ホ−ル素子

Publications (2)

Publication Number Publication Date
JPS5955064A true JPS5955064A (ja) 1984-03-29
JPH0232795B2 JPH0232795B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-07-23

Family

ID=15814620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57165557A Granted JPS5955064A (ja) 1982-09-22 1982-09-22 ホ−ル素子

Country Status (1)

Country Link
JP (1) JPS5955064A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8035932B2 (en) 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification
US9425325B2 (en) 2008-09-17 2016-08-23 Cypress Semiconductor Corporation Electrically programmable and eraseable memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562691A (en) * 1979-06-21 1981-01-12 Rohm Co Ltd Hall-effect device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562691A (en) * 1979-06-21 1981-01-12 Rohm Co Ltd Hall-effect device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8035932B2 (en) 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification
US9425325B2 (en) 2008-09-17 2016-08-23 Cypress Semiconductor Corporation Electrically programmable and eraseable memory device

Also Published As

Publication number Publication date
JPH0232795B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-07-23

Similar Documents

Publication Publication Date Title
US4673964A (en) Buried Hall element
JP2016530490A (ja) 電荷検出のための集積センサデバイス
US4100563A (en) Semiconductor magnetic transducers
JPH0230588B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR100278247B1 (ko) 자계 센서와 자계의 방위 및 세기를 감지하는 방법
JPH10132871A (ja) 半導体装置
JPH0117268B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US3882409A (en) Differential amplifier circuit
JPH049378B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5955064A (ja) ホ−ル素子
US3704399A (en) Semiconductor device and circuit arrangement comprising the device
US4051443A (en) Differential amplifier
JPH0249032B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3141347B2 (ja) トランジスタ型磁気センサ
JPH0834221B2 (ja) 電流検出機能付半導体装置
JP3149513B2 (ja) 半導体装置
JPH0122995B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2002190480A (ja) 半導体装置
JPS6046064A (ja) 半導体装置
JPS6359262B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP3038723B2 (ja) 半導体回路装置
JPH0122994B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61264771A (ja) 磁気制御可変電流増幅率トランジスタ
JPS6116569A (ja) 半導体集積回路装置
JPS6118173A (ja) トランジスタ