JPS5955062A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5955062A
JPS5955062A JP57166106A JP16610682A JPS5955062A JP S5955062 A JPS5955062 A JP S5955062A JP 57166106 A JP57166106 A JP 57166106A JP 16610682 A JP16610682 A JP 16610682A JP S5955062 A JPS5955062 A JP S5955062A
Authority
JP
Japan
Prior art keywords
film
silicon
capacitor
dielectric
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57166106A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311551B2 (enrdf_load_stackoverflow
Inventor
Yoshimi Shiotani
喜美 塩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57166106A priority Critical patent/JPS5955062A/ja
Publication of JPS5955062A publication Critical patent/JPS5955062A/ja
Publication of JPH0311551B2 publication Critical patent/JPH0311551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57166106A 1982-09-24 1982-09-24 半導体装置の製造方法 Granted JPS5955062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166106A JPS5955062A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166106A JPS5955062A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5955062A true JPS5955062A (ja) 1984-03-29
JPH0311551B2 JPH0311551B2 (enrdf_load_stackoverflow) 1991-02-18

Family

ID=15825123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166106A Granted JPS5955062A (ja) 1982-09-24 1982-09-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5955062A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207048A (ja) * 1985-03-12 1986-09-13 Seiko Instr & Electronics Ltd 半導体装置
JPH0250476A (ja) * 1988-08-12 1990-02-20 Hitachi Ltd 半導体集積回路装置の製造方法
US6027977A (en) * 1997-05-14 2000-02-22 Nec Corporation Method of fabricating semiconductor device with MIS structure
US8633074B2 (en) * 2008-09-17 2014-01-21 Spansion Llc Electrically programmable and erasable memory device and method of fabrication thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207048A (ja) * 1985-03-12 1986-09-13 Seiko Instr & Electronics Ltd 半導体装置
JPH0250476A (ja) * 1988-08-12 1990-02-20 Hitachi Ltd 半導体集積回路装置の製造方法
US6027977A (en) * 1997-05-14 2000-02-22 Nec Corporation Method of fabricating semiconductor device with MIS structure
US8633074B2 (en) * 2008-09-17 2014-01-21 Spansion Llc Electrically programmable and erasable memory device and method of fabrication thereof
US9425325B2 (en) 2008-09-17 2016-08-23 Cypress Semiconductor Corporation Electrically programmable and eraseable memory device

Also Published As

Publication number Publication date
JPH0311551B2 (enrdf_load_stackoverflow) 1991-02-18

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