JPS5950563A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5950563A
JPS5950563A JP57161661A JP16166182A JPS5950563A JP S5950563 A JPS5950563 A JP S5950563A JP 57161661 A JP57161661 A JP 57161661A JP 16166182 A JP16166182 A JP 16166182A JP S5950563 A JPS5950563 A JP S5950563A
Authority
JP
Japan
Prior art keywords
ion
channel
phosphorus
oxide film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57161661A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0559586B2 (enExample
Inventor
Junichi Matsunaga
松永　準一
Hiroshi Nozawa
野沢　博
Hidetaro Nishimura
西村　秀太郎
Kenji Taniguchi
研二 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57161661A priority Critical patent/JPS5950563A/ja
Publication of JPS5950563A publication Critical patent/JPS5950563A/ja
Publication of JPH0559586B2 publication Critical patent/JPH0559586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57161661A 1982-09-17 1982-09-17 半導体装置の製造方法 Granted JPS5950563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57161661A JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57161661A JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5950563A true JPS5950563A (ja) 1984-03-23
JPH0559586B2 JPH0559586B2 (enExample) 1993-08-31

Family

ID=15739424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57161661A Granted JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5950563A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297113B1 (en) 1998-04-03 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549470A (en) * 1977-06-22 1979-01-24 Shin Meiwa Ind Co Ltd Refuse treating device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549470A (en) * 1977-06-22 1979-01-24 Shin Meiwa Ind Co Ltd Refuse treating device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297113B1 (en) 1998-04-03 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device, and a semiconductor device manufactured thereby

Also Published As

Publication number Publication date
JPH0559586B2 (enExample) 1993-08-31

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