JPH0559586B2 - - Google Patents

Info

Publication number
JPH0559586B2
JPH0559586B2 JP57161661A JP16166182A JPH0559586B2 JP H0559586 B2 JPH0559586 B2 JP H0559586B2 JP 57161661 A JP57161661 A JP 57161661A JP 16166182 A JP16166182 A JP 16166182A JP H0559586 B2 JPH0559586 B2 JP H0559586B2
Authority
JP
Japan
Prior art keywords
ion
channel
ion implantation
channel mos
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57161661A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5950563A (ja
Inventor
Junichi Matsunaga
Hiroshi Nozawa
Hidetaro Nishimura
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57161661A priority Critical patent/JPS5950563A/ja
Publication of JPS5950563A publication Critical patent/JPS5950563A/ja
Publication of JPH0559586B2 publication Critical patent/JPH0559586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57161661A 1982-09-17 1982-09-17 半導体装置の製造方法 Granted JPS5950563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57161661A JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57161661A JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5950563A JPS5950563A (ja) 1984-03-23
JPH0559586B2 true JPH0559586B2 (enExample) 1993-08-31

Family

ID=15739424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57161661A Granted JPS5950563A (ja) 1982-09-17 1982-09-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5950563A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11288896A (ja) 1998-04-03 1999-10-19 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549470A (en) * 1977-06-22 1979-01-24 Shin Meiwa Ind Co Ltd Refuse treating device

Also Published As

Publication number Publication date
JPS5950563A (ja) 1984-03-23

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