JPS5945917A - 多結晶シリコンの連続的製法 - Google Patents
多結晶シリコンの連続的製法Info
- Publication number
- JPS5945917A JPS5945917A JP15178882A JP15178882A JPS5945917A JP S5945917 A JPS5945917 A JP S5945917A JP 15178882 A JP15178882 A JP 15178882A JP 15178882 A JP15178882 A JP 15178882A JP S5945917 A JPS5945917 A JP S5945917A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- fluidized bed
- bed reactor
- gas
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 229910000077 silane Inorganic materials 0.000 claims description 9
- -1 silane compound Chemical class 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000011437 continuous method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 52
- 239000002994 raw material Substances 0.000 abstract description 14
- 238000001556 precipitation Methods 0.000 abstract description 13
- 239000011856 silicon-based particle Substances 0.000 abstract description 11
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 abstract description 9
- 239000005052 trichlorosilane Substances 0.000 abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 8
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 abstract description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 abstract description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract description 5
- 239000005049 silicon tetrachloride Substances 0.000 abstract description 5
- 238000011084 recovery Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XLVKXZZJSTWDJY-UHFFFAOYSA-N [SiH4].[Si] Chemical compound [SiH4].[Si] XLVKXZZJSTWDJY-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15178882A JPS5945917A (ja) | 1982-09-02 | 1982-09-02 | 多結晶シリコンの連続的製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15178882A JPS5945917A (ja) | 1982-09-02 | 1982-09-02 | 多結晶シリコンの連続的製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5945917A true JPS5945917A (ja) | 1984-03-15 |
| JPH0317768B2 JPH0317768B2 (en, 2012) | 1991-03-08 |
Family
ID=15526302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15178882A Granted JPS5945917A (ja) | 1982-09-02 | 1982-09-02 | 多結晶シリコンの連続的製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5945917A (en, 2012) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
| JPH0221938A (ja) * | 1988-03-31 | 1990-01-24 | Union Carbide Corp | 環状加熱流動床反応器 |
| JPH02233514A (ja) * | 1989-03-06 | 1990-09-17 | Osaka Titanium Co Ltd | 多結晶シリコンの製造方法 |
| US5139762A (en) * | 1987-12-14 | 1992-08-18 | Advanced Silicon Materials, Inc. | Fluidized bed for production of polycrystalline silicon |
| JPH08259211A (ja) * | 1995-03-24 | 1996-10-08 | Tokuyama Corp | シラン類の分解・還元反応装置および高純度結晶シリコンの製造方法 |
| CN101780956A (zh) * | 2010-03-03 | 2010-07-21 | 清华大学 | 采用流化床反应器制备高纯度多晶硅颗粒的方法及装置 |
| US8404206B2 (en) | 2008-06-30 | 2013-03-26 | Memc Electronic Materials, Inc. | Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls |
| US8747757B2 (en) | 2006-08-10 | 2014-06-10 | Korea Research Institute Of Chemical Technology | Method and apparatus for preparation of granular polysilicon |
| US8828324B2 (en) | 2009-12-29 | 2014-09-09 | Sunedison, Inc. | Fluidized bed reactor systems and distributors for use in same |
| CN104803386A (zh) * | 2015-03-03 | 2015-07-29 | 上海交通大学 | 用于制备高纯度多晶硅颗粒的流化床提升管反应器及方法 |
| US10105669B2 (en) | 2012-08-29 | 2018-10-23 | Hemlock Semiconductor Operations Llc | Tapered fluidized bed reactor and process for its use |
-
1982
- 1982-09-02 JP JP15178882A patent/JPS5945917A/ja active Granted
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139762A (en) * | 1987-12-14 | 1992-08-18 | Advanced Silicon Materials, Inc. | Fluidized bed for production of polycrystalline silicon |
| JPH01282194A (ja) * | 1988-01-19 | 1989-11-14 | Osaka Titanium Co Ltd | 単結晶製造方法 |
| JPH0221938A (ja) * | 1988-03-31 | 1990-01-24 | Union Carbide Corp | 環状加熱流動床反応器 |
| JPH02233514A (ja) * | 1989-03-06 | 1990-09-17 | Osaka Titanium Co Ltd | 多結晶シリコンの製造方法 |
| JPH08259211A (ja) * | 1995-03-24 | 1996-10-08 | Tokuyama Corp | シラン類の分解・還元反応装置および高純度結晶シリコンの製造方法 |
| US8747757B2 (en) | 2006-08-10 | 2014-06-10 | Korea Research Institute Of Chemical Technology | Method and apparatus for preparation of granular polysilicon |
| US8821827B2 (en) | 2006-08-10 | 2014-09-02 | Korea Research Institute Of Chemical Technology | Method and apparatus for preparation of granular polysilicon |
| US9764960B2 (en) | 2006-08-10 | 2017-09-19 | Korea Research Institute Of Chemical Technology | Method and apparatus for preparation of granular polysilicon |
| US8404206B2 (en) | 2008-06-30 | 2013-03-26 | Memc Electronic Materials, Inc. | Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls |
| US8728574B2 (en) | 2008-06-30 | 2014-05-20 | Memc Electronic Materials, Inc. | Methods for introducing a first gas and a second gas into a reaction chamber |
| US8906313B2 (en) | 2008-06-30 | 2014-12-09 | Sunedison, Inc. | Fluidized bed reactor systems |
| US8828324B2 (en) | 2009-12-29 | 2014-09-09 | Sunedison, Inc. | Fluidized bed reactor systems and distributors for use in same |
| CN101780956A (zh) * | 2010-03-03 | 2010-07-21 | 清华大学 | 采用流化床反应器制备高纯度多晶硅颗粒的方法及装置 |
| US10105669B2 (en) | 2012-08-29 | 2018-10-23 | Hemlock Semiconductor Operations Llc | Tapered fluidized bed reactor and process for its use |
| US10265671B2 (en) | 2012-08-29 | 2019-04-23 | Hemlock Semiconductor Operations Llc | Tapered fluidized bed reactor and process for its use |
| CN104803386A (zh) * | 2015-03-03 | 2015-07-29 | 上海交通大学 | 用于制备高纯度多晶硅颗粒的流化床提升管反应器及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0317768B2 (en, 2012) | 1991-03-08 |
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