JPS5944884A - 分布帰還形半導体接合レ−ザ - Google Patents

分布帰還形半導体接合レ−ザ

Info

Publication number
JPS5944884A
JPS5944884A JP57154038A JP15403882A JPS5944884A JP S5944884 A JPS5944884 A JP S5944884A JP 57154038 A JP57154038 A JP 57154038A JP 15403882 A JP15403882 A JP 15403882A JP S5944884 A JPS5944884 A JP S5944884A
Authority
JP
Japan
Prior art keywords
layer
active layer
electrode
buried
excitation part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57154038A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320038B2 (enExample
Inventor
Tetsuhiko Ikegami
池上　徹彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57154038A priority Critical patent/JPS5944884A/ja
Publication of JPS5944884A publication Critical patent/JPS5944884A/ja
Publication of JPS6320038B2 publication Critical patent/JPS6320038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57154038A 1982-09-06 1982-09-06 分布帰還形半導体接合レ−ザ Granted JPS5944884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57154038A JPS5944884A (ja) 1982-09-06 1982-09-06 分布帰還形半導体接合レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57154038A JPS5944884A (ja) 1982-09-06 1982-09-06 分布帰還形半導体接合レ−ザ

Publications (2)

Publication Number Publication Date
JPS5944884A true JPS5944884A (ja) 1984-03-13
JPS6320038B2 JPS6320038B2 (enExample) 1988-04-26

Family

ID=15575552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57154038A Granted JPS5944884A (ja) 1982-09-06 1982-09-06 分布帰還形半導体接合レ−ザ

Country Status (1)

Country Link
JP (1) JPS5944884A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316692A (ja) * 1986-07-08 1988-01-23 Nec Corp 分布帰還形半導体レ−ザ
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
JPH0551430U (ja) * 1991-12-09 1993-07-09 川澄化学工業株式会社 流体処理装置の端部固定ケ−ス
US5555544A (en) * 1992-01-31 1996-09-10 Massachusetts Institute Of Technology Tapered semiconductor laser oscillator
WO2002060023A1 (en) * 2001-01-23 2002-08-01 The University Court Of The University Of Glasgow Improvements in or relating to semiconductor lasers
JP2006210466A (ja) * 2005-01-26 2006-08-10 Opnext Japan Inc 半導体光素子
JP2013077757A (ja) * 2011-09-30 2013-04-25 Kyoto Univ 端面発光型フォトニック結晶レーザ素子

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316692A (ja) * 1986-07-08 1988-01-23 Nec Corp 分布帰還形半導体レ−ザ
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
JPH0551430U (ja) * 1991-12-09 1993-07-09 川澄化学工業株式会社 流体処理装置の端部固定ケ−ス
US5555544A (en) * 1992-01-31 1996-09-10 Massachusetts Institute Of Technology Tapered semiconductor laser oscillator
WO2002060023A1 (en) * 2001-01-23 2002-08-01 The University Court Of The University Of Glasgow Improvements in or relating to semiconductor lasers
JP2006210466A (ja) * 2005-01-26 2006-08-10 Opnext Japan Inc 半導体光素子
JP2013077757A (ja) * 2011-09-30 2013-04-25 Kyoto Univ 端面発光型フォトニック結晶レーザ素子
US9130339B2 (en) 2011-09-30 2015-09-08 Kyoto University End-face-emitting photonic crystal laser element

Also Published As

Publication number Publication date
JPS6320038B2 (enExample) 1988-04-26

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