JPS5943874A - Vessel for storing material to be evaporated and its using method - Google Patents

Vessel for storing material to be evaporated and its using method

Info

Publication number
JPS5943874A
JPS5943874A JP15424082A JP15424082A JPS5943874A JP S5943874 A JPS5943874 A JP S5943874A JP 15424082 A JP15424082 A JP 15424082A JP 15424082 A JP15424082 A JP 15424082A JP S5943874 A JPS5943874 A JP S5943874A
Authority
JP
Japan
Prior art keywords
evaporation
evaporated
container
evaporation material
evaporative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15424082A
Other languages
Japanese (ja)
Inventor
Hiroyuki Moriguchi
博行 森口
Masanori Matsumoto
雅則 松本
Akira Nishiwaki
彰 西脇
Yasuo Morohoshi
保雄 諸星
Hiroyuki Nomori
野守 弘之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP15424082A priority Critical patent/JPS5943874A/en
Priority to US06/528,215 priority patent/US4551303A/en
Publication of JPS5943874A publication Critical patent/JPS5943874A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition

Abstract

PURPOSE:To manufacture a film deposited by evaporation having good film quality with a simple and durable vessel, by heating and evaporating >=2 kinds of raw materials to be evaporated simultaneously in the vessel having no partition wall, conducting the same through an opening smaller than the evaporation area and depositing the vapors on a substrate. CONSTITUTION:Internal vessels 13, 14 contg. selenium alloys 3, 4 having different concns. or different component elements are disposed in a vessel body 10 which is not provided with a partition wall for segmenting substantially the internal space of a evaporation source 11. Heater lamps 5, 6 are respectively disposed and are turned on simultaneously to heat and eveporate the alloys, the vapors whereof are conducted through an upper opening 7 smaller than the evaporation area to the outside and are deposited on a substrate to be deposited therein with a film by evaporation (not shown). A plate 15 for preventing bumping and a lamp 16 for accelerating the vapor and preventing condensation are further provided in the vessel 10 to improve the film quality and to prevent the corrosion of the body 10. The evaporated vapors are thus uniformly mixed, and the film deposited by evaporation having the good film quality of a desired concn. profile is thus obtd.

Description

【発明の詳細な説明】 本発明は、例えばセレン及びテルルからなる蒸発材料を
加熱、蒸発させる際に使用され、前記蒸発材料がその蒸
発面積より小さい開口を辿して外方へ導出されるように
構成された蒸発材料収容器及びその使用方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention is used to heat and evaporate an evaporation material made of selenium and tellurium, for example, so that the evaporation material follows an opening smaller than the evaporation area and is led out. The present invention relates to an evaporative material container constructed as described above and a method of using the same.

この種の蒸発材料収容器(以下、蒸着ボートと称する。This type of evaporation material container (hereinafter referred to as a evaporation boat).

)として、蒸発材料の蒸発面λhとほぼ同一サイズの上
部間1コを有したいわゆるオープンボートが知られてい
る。  しかし、このようなオープンボートでは、蒸着
速度の制御が困難であシ、しかも突沸が多い等の実用上
の問題が大きい。
) is known as a so-called open boat having an upper part that is approximately the same size as the evaporation surface λh of the evaporation material. However, in such an open boat, it is difficult to control the deposition rate, and there are many practical problems such as bumping.

一方、オープンボートの欠点をiW消したボートとして
、いわゆるクヌードセンセル型と称すれるものがある。
On the other hand, there is a boat called the Knudsensel type that eliminates the drawbacks of open boats.

 これは、上部間1」1・蒸発面積よシ狭く絞ることに
よシ、蒸着速度が効果的に制御され、かつ突沸で飛出し
た蒸発物が土部1i1 Dに至るまでの間に壁部に付着
して外方(即ち被蒸着基体側)へ飛翔することはない等
の点で、非常に優れたものである。
By constricting the evaporation area narrower than the upper space 1"1, the evaporation rate can be effectively controlled, and the evaporated matter ejected by bumping can reach the soil part 1i1D. It is very excellent in that it does not adhere to the substrate and fly outward (that is, to the side of the substrate to be evaporated).

こうしたクヌードセンセル型蒸発源としては、構成が比
較的簡素化しかつ操作性、蒸発安定性を改良した単一ボ
ート方式が例えは特開昭55−176361号で提案さ
れている。 この公知の蒸発源は、第1図の如く、1つ
のボート1の内空間を隔壁2で2分し、これらの区分さ
れた各空間内に互いに異なる成分濃度のセレン−テルル
合金3.4を配して、各セレン−テルル合金をヒーター
5.6で加熱、蒸発さぜ、上部間ロアから導出させるこ
とができる。 この場合、各合金の温度を個々に制御し
、各蒸気を混合しながら例えはドラム状の被蒸着基体8
に蒸着することによってテルルのm1度プロファイルを
コントロールしている。
As such a Knudsen cell type evaporation source, a single boat type having a relatively simple structure and improved operability and evaporation stability has been proposed, for example, in Japanese Patent Laid-Open No. 176361/1983. As shown in FIG. 1, this known evaporation source divides the inner space of one boat 1 into two by a partition wall 2, and selenium-tellurium alloy 3.4 with different component concentrations is placed in each of these divided spaces. Then, each selenium-tellurium alloy can be heated and evaporated by a heater 5.6, and then led out from the lower part between the upper parts. In this case, the temperature of each alloy is individually controlled, and while each vapor is mixed, a drum-shaped substrate 8 is heated.
The m1 degree profile of tellurium is controlled by vapor deposition.

しかしながら、この公知の装置及び方法には次の如き欠
点があることが判明した。 即ち、各蒸発材料が互いに
隔絶された空間で夫々蒸発せしめられるから、これらの
複数種類の蒸気r均一に混合することが困難となり、基
体上に均−若しくは連続的なイ1.奄度プロファイルの
蒸着膜(Se  ’I”e Aik光体11j’! )
を形成することができない。 しかも、比較的低温に制
御している蒸発材料側へ他方の蒸気が侵入した場合、こ
の蒸気がボート内壁部に付着したり、或いは外方へ出た
蒸気が低温側のボート外壁面に付着する現象が生じる。
However, it has been found that this known device and method has the following drawbacks. That is, since each evaporation material is evaporated in a space isolated from each other, it is difficult to uniformly mix these multiple types of vapors, and a uniform or continuous vapor is formed on the substrate. Deposited film with intensity profile (Se 'I"e Aik light body 11j'!)
cannot be formed. Furthermore, if steam from the other side enters the evaporation material side, which is controlled at a relatively low temperature, this steam may adhere to the inner wall of the boat, or the steam exiting to the outside may adhere to the outer wall of the boat on the low temperature side. A phenomenon occurs.

 この句着物質は再蒸発等によって蒸気組成を変化させ
るので不都合なものである。 また、上記した如く隔壁
を設けていることは致命的な別の欠陥を生せしめる。 
即ち、蒸発材料として高いテルル濃度の合金を用いる場
合には、腐食性の強いテルルの蒸気によって隔壁が腐食
され易く、このために蒸発源とし7ての耐久性の低下や
腐食物質の蒸着膜への混入の問題が生じる。 これを防
ぐプζめに隔壁の温度を下げるように処置すると、今度
はI’f+4壁土に蒸気の凝結(更に1.1昇華)が牛
じるので不適当である。
This curing substance is disadvantageous because it changes the vapor composition due to re-evaporation or the like. Further, the provision of partition walls as described above causes another fatal defect.
In other words, when an alloy with a high tellurium concentration is used as the evaporation material, the partition walls are likely to be corroded by the highly corrosive tellurium vapor, which reduces its durability as an evaporation source and causes corrosive substances to form in the evaporated film. The problem of contamination arises. If measures were taken to lower the temperature of the partition wall in order to prevent this, this would be inappropriate, since vapor condensation (further 1.1 sublimation) would occur on the I'f+4 wall soil.

本発明は、上記の如き蒸発源の!h艮を生かしつつその
欠陥を是正し、構造が簡素であるにも拘らず所望の41
度プロファイルの膜質良好な蒸着膜を作成でき、しかも
耐久性等の改善された蒸発材料収容器を提供するもので
ある。
The present invention uses the above-mentioned evaporation source! By correcting the defects while making the best use of the
The purpose of the present invention is to provide an evaporation material container that can produce a evaporated film with a good film quality and has improved durability.

即ち、本発明&″:L:L冒頭た蒸発材料収容器におい
て、2棟以上の蒸発材料が単一の容器本体内に夫々配置
され、各蒸発材料間には容器本体の内空間を実質的に区
分する隔壁が設けられていないことを特徴とするもので
ある。
That is, in the evaporative material container described at the beginning of the present invention &'':L:L, two or more evaporative materials are arranged within a single container main body, and the inner space of the container main body is substantially occupied between each evaporative material. It is characterized by the fact that there is no partition wall that separates the

この容器によれば、既述したクヌードセンセル型蒸発源
のもつ特長(即ち、蒸発の制御性、突沸の防止等)を発
揮できると共に、各蒸発利料を共通の窒問中へ蒸発させ
イnるために蒸気の混合を均一化し、均−若しくは連続
した濃度コントロールを行なうことができる。 しかも
、各A発月料は同時に加熱できることから、上述した如
き蒸気物質の付着の問題が生じない。 これに加えて、
容器内にμm゛1壁を設けないもう1つの利点として、
隔    ′壁を設けた場合の腐食や蒸着膜への不純物
の混入という事態も避けることができる。
According to this container, the features of the Knudsen cell type evaporation source described above (i.e., evaporation controllability, prevention of bumping, etc.) can be exhibited, and each type of evaporation charge can be evaporated into a common evaporation source. It is possible to homogenize the mixing of steam to achieve uniform or continuous concentration control. In addition, since each A charge can be heated at the same time, the above-mentioned problem of adhesion of vapor substances does not occur. In addition to this,
Another advantage of not having a μm1 wall inside the container is that
Corrosion that would occur if a partition wall is provided and impurities entering the deposited film can also be avoided.

本発明による容器においては、各蒸発材料を加熱するた
めのヒーターか夫々前され、これらのヒーターが同時に
オンするように構成することが、上記の効果を得る上で
重重しい。 まだ、突沸をより効果的に防止するために
、蒸発月料上に突沸防止板が設けられているのがよい。
In the container according to the present invention, heaters for heating each evaporation material are provided in front of each other, and it is important to configure the container so that these heaters are turned on at the same time in order to obtain the above-mentioned effects. However, in order to more effectively prevent bumping, it is preferable that a bumping prevention plate be provided on the evaporation charge.

本発明による容器は、次の如くに使用することが望まし
い。 即ち、この使用方法は、容器本体の内空間を実質
的に区分するよりな■、つ壁が設けられていない単一の
容器内に2種以上の蒸発材料を夫々配置し、これらの蒸
発材料を同時に加熱、蒸発させ、その蒸発面積より小さ
い開口を通して外方へ導出して被蒸着基体上に蒸着する
ことを特徴としている。
The container according to the invention is preferably used as follows. That is, in this method of use, two or more types of evaporative materials are placed in a single container without walls, rather than substantially dividing the internal space of the container body, and these evaporative materials are is simultaneously heated and evaporated, and is led out through an opening smaller than the evaporation area to be evaporated onto the substrate to be evaporated.

この使用方法によって、上H己したに♂(+著な効果を
再現性良く確実に得ることができ、蒸着膜ケ呉造する上
で極めて不用なものである。
By using this method, it is possible to reliably obtain a remarkable effect with good reproducibility, and it is extremely unnecessary in the production of vapor-deposited films.

この方法においては、所望の濃度プロファイルを得るた
めに、各蒸発材料を互いに異なった蒸発速度で蒸発せし
めるのが重重しい。 蒸発月料としてはセレン合金が使
用可能であるが、各セレン合金間において、セレン以外
の同一種類の成分元素の濃度が互いに異なっていたり、
各セレン台金間において、セレン以外の成分元素の棹頓
が互いに異なっていてもよい。
In this method, it is burdensome to evaporate each evaporation material at a different evaporation rate in order to obtain the desired concentration profile. Selenium alloys can be used as evaporation charges, but the concentrations of the same type of component elements other than selenium may differ among the selenium alloys.
The amounts of component elements other than selenium may be different between the selenium base metals.

以下、本発明を実施例についで図面参照下に詳細に説明
する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be explained in detail by way of examples and with reference to the drawings.

第2図に示す蒸発源11はクヌードセンセル型に構成さ
れるが、これによれは、容器本体10内には、その内空
間を実質的に区分する如き隔壁は全く設けられておらず
、共通の内空間12では濃度の)°15なる第1のSe
 −’L”e蒸発イオ料3と第2の5e−Te蒸発材料
4とが各内容器13.14に夫々収容されている。
The evaporation source 11 shown in FIG. 2 is constructed in a Knudsen cell type, but with this, there is no partition wall provided inside the container body 10 that substantially divides the internal space. , in the common inner space 12 the first Se of concentration)°15
-'L''e vaporized ion material 3 and second 5e-Te vaporized material 4 are housed in each inner container 13, 14, respectively.

各蒸発材料−トにはヒーターランプ5.6が夫々間され
、更に上部には突沸防止板15、蒸夕を加辻及び凝縮防
止用のヒーターランプ16が配されでいるOこのように
構成された蒸発源を用いた蒸A′1操作の−011を説
明すると、第1の蒸発材料3としてTe濃度4重、11
(係の5e−Te、第2の蒸発月料4としてTea度2
5 重i % ’のSe−’reを別々に装力Qした0
 そして、ヒーター5.6を同時にオンさせ、290°
Cで60分間各蒸発材料を同時に蒸発させて蒸着したと
ころ、低讃I変の蒸発材料3は全邦蒸発し、高鍋度の蒸
発材料4は約30係の蒸発率となった。 々お、蒸着槽
の真空度はIn”Torr以−にとするのがよい0 こうして得られた蒸着膜、即ち5e−Te感光体をXメ
′泉マイクロアナライザーで解析しん結果、不3図に示
す如きTe濃度プロファイルを示し、内層はTe5重量
%であって電イ’+:i輸送層として機能し、表層は’
l’elB重量%であり、テルルの高含有量により特に
長波長域の感度が良好となった電荷発生層として機能す
る。 また、この感光体について、電子写真複写機U 
 Bix V2 (小西六写真工業(抹)製)で実写特
性を調べたところ、カブリのない高濃度な画像が併られ
た。
A heater lamp 5.6 is placed between each evaporation material, and a bumping prevention plate 15 and a heater lamp 16 for preventing vaporization and condensation are arranged above. To explain -011 of the evaporation A'1 operation using an evaporation source, the first evaporation material 3 has a Te concentration of 4 times, 11
(5e-Te in charge, Tea degree 2 as the second evaporation charge 4
5 Weight i %'Se-'re was equipped with Q separately 0
Then, turn on heaters 5 and 6 at the same time, and
When each evaporation material was simultaneously evaporated and deposited at C for 60 minutes, evaporation material 3 with a low temperature I evaporated completely, and evaporation material 4 with a high evaporation rate had an evaporation rate of about 30. It is better to set the vacuum level of the vapor deposition tank to In'' Torr or higher.The result of analyzing the thus obtained vapor deposited film, that is, the 5e-Te photoreceptor, with an The Te concentration profile is as shown in the figure, the inner layer is 5% by weight of Te and functions as an electron transport layer, and the surface layer is 5% by weight of Te.
1'elB% by weight, and functions as a charge generation layer with particularly good sensitivity in the long wavelength range due to the high tellurium content. Regarding this photoreceptor, electrophotographic copying machine U
When the actual photographic characteristics were examined using Bix V2 (manufactured by Konishiroku Photo Industry Co., Ltd.), high-density images with no fog were produced.

上記の如く、本発明に従う蒸発(原及びその(車用方法
によれば、蒸発源自体の構造が史に簡素化される上に、
容易に所望の)湿度コントロール忙行なうことができる
。 これは、容器内にh;壁を設けず、各蒸兆旧料の蒸
発速度の差を利用して同時蒸発させ、均一な混合蒸気針
基体1tt1へイノ1出できるからである。 得らり、
だ#)、乍プロファイル(第3図参照)は非常に望まし
いものであり、gjY:体の電位保持性、残留電位の低
下、黒紙411fの低下といった優れた静電特性を奏し
得るものとなる。
As mentioned above, according to the evaporation method according to the present invention, the structure of the evaporation source itself is simplified, and
Desired) humidity control can be carried out easily. This is because no wall is provided in the container, and the difference in evaporation rate of each evaporation agent and old material is used to evaporate them simultaneously, allowing a uniform mixture of vapor to be discharged to the needle base 1tt1. I got it,
), the profile (see Figure 3) is very desirable, and it can exhibit excellent electrostatic properties such as gjY: body potential retention, lower residual potential, and lower black paper 411f. .

なお、上記の各蒸蛇材料3及び4問におけるテルル濃度
は4・Ji k 選択でき、例えば第1の蒸発材料3で
はTe濃度をO〜8重量係、第2の蒸発材料4ではTe
濃度を15−25 :fjr、 、i+i%の範囲で夫
に訳択してよい。 まだ、テルルに代えて他の1jυ、
分元索、例エハヒ素、アンチモン等3.:用い、これら
全各坏イi′;材料とも同一:r!tr aとしてよい
し、或い(′J、そのi’ili Q34を異ならせて
もよい。
In addition, the tellurium concentration in each of the above-mentioned evaporative materials 3 and 4 can be selected by 4.
The concentration may be selected within the range of 15-25:fjr, i+i%. Still, instead of tellurium, other 1jυ,
3. Partitional elements, e.g. arsenic, antimony, etc. : Used, all of these materials i'; Materials are the same: r! tra may be used, or ('J, its i'ili Q34 may be different.

第4図は、別の例による蒸発源を示しているが、ここで
は11A発月料3.4をヒーター25.2Gによって底
部からも加熱しているので、加熱、蒸発の女定性か良く
なる。 なお、突沸防止&111、lji’1ロア7j
’j下に配されている。
Figure 4 shows another example of an evaporation source, but here the 11A monthly charge 3.4 is also heated from the bottom by the heater 25.2G, which improves the consistency of heating and evaporation. . In addition, bumping prevention &111, lji'1 lower 7j
It is placed under 'j.

以上、本発明を例示したが、上1ボの例kr本発明の技
術的思想に基いて史に変形が可能である。
Although the present invention has been illustrated above, modifications can be made based on the technical idea of the present invention.

例えば、蒸〉1源の形状や44造、蒸発材料の配置や(
1・Sl介J、&;l: N−jli々変更できる。 
また、使用する蒸発材料はSe −’l’eに限らず、
Se −S 、 Fe Ni XAgBr−I等でもよ
い。
For example, the shape of the evaporation source, the 44 structure, the arrangement of the evaporation material, etc.
1.Sl-J, &;l: N-jli can be changed.
In addition, the evaporation material used is not limited to Se-'l'e.
Se-S, FeNiXAgBr-I, etc. may also be used.

l¥1面の間車な説明 第1124は従来例による真空蒸着A々置の要部+1を
略図である。
1124 on page 1 is a schematic diagram of the main part +1 of the vacuum evaporation according to the conventional example.

欝2図〜第4図は本発明の実施例を示すものであって、 第2図は蒸発源のIFIIi′而図、 第3面は蒸着膜のデルル冷度フロファイルを示す図、 第4図は別の蒸発源の断面図 である。Figures 2 to 4 show embodiments of the present invention, Figure 2 shows the IFIIi diagram of the evaporation source. The third side is a diagram showing the delle cooling profile of the deposited film, Figure 4 is a cross-sectional view of another evaporation source. It is.

なお、図面に示された符号において、 3・・・−・・・・・・−・−・ ・−低テルル病度の
#屏材利4・・・ ・・・・・・・−・・・ ・・・筒
テルル敬度の蒸発利料5.6.16.25.2G・・・
・ヒーター7・   ・・・ −・・・・上部開口8・
・・・・ ・・   ・被蒸着基体11・・・・・・・
 ・ ・・・ ・・蒸発線15・・・・・・・・・・・
・・ ・ ・突沸防止板である。
In addition, in the symbols shown in the drawings, 3...--...----.・ ...Evaporation charge of tube tellurium 5.6.16.25.2G...
・Heater 7・ ... −・・Top opening 8・
...... - Vapor deposition target substrate 11...
・ ・・・・・・Evaporation line 15・・・・・・・・・・・・
・ ・ ・This is a bumping prevention plate.

代理人 弁理士  沿′二 坂   先竿1図   4 第2図 第3図 膜刷)tml 第4図 (自発) 手1t”5eネ市正書 昭和58年11月3旧コ 特許庁長官  若 杉 和 夫  殿 1、事件の表示 昭和57年  特許 願第154240号2、発明の名
称 蒸発材料収容器及びその使用方法 3、補正をする者 事件との関係 特許出願人 住 所 東京都新宿区西新宿1丁目26番2号名 称 
(127)小西六写真工業株式会社4、代理人 住 所 東京都立川市柴崎町3−9−17鈴木ビル2階
6、補iE?こより増加する発明の数 7、補正の対象 明細書の発明の詳細な説明の欄 8、補正の内容 (1)、明細書箱5頁10行目の「(更には昇華)Jを
削除しまず。
Agent Patent Attorney Yori Nisaka 1 fig. 4 fig. 2 fig. Kazuo Tono1, Indication of the case 1982 Patent Application No. 1542402, Name of the invention Evaporation material container and its method of use3, Relationship with the person making the amendment Patent applicant address Nishi-Shinjuku, Shinjuku-ku, Tokyo 1-26-2 Name
(127) Konishiroku Photo Industry Co., Ltd. 4, Agent address: 6, 2nd floor, Suzuki Building, 3-9-17 Shibasaki-cho, Tachikawa-shi, Tokyo, Supplementary iE? The number of inventions increases from this 7, Detailed description of the invention column 8 of the specification subject to amendment, Contents of amendment (1), ``(Furthermore, sublimation) .

(2)、同第8頁下から2行目のrSe−Te感光体」
を「S e −T’ e感光層」と訂正しまず。
(2) rSe-Te photoreceptor on page 8, second line from the bottom.”
First, correct it to "S e - T' e photosensitive layer."

−以 上− 423- Above - 423

Claims (1)

【特許請求の範囲】 1、蒸発材料を加熱、蒸発させる際に使用され、前記蒸
発材料がその蒸発面積よシ小さい開口を通して外方へ導
出されるように構成された蒸発材料収容器において、2
秒以上の蒸発材料が単一の容器本体内に夫々配置され、
各蒸発材料間には容器本体の内空間を実質的に区分する
隔壁が設けられていないことを特徴とする蒸発材料収容
器。 2 各蒸発材料を加熱するだめのヒーターが夫々配され
、これらのヒーターし一同時に通電するように構成した
、特許請求の範囲の第1項に記載した蒸発利料収容器。 3、蒸発材料上に突沸防止板が設けられている、!1′
i許請求の範囲の第1項又は第2項に記載した蒸発利料
収容器。 4 容器本体の内空間を実質的に区分するような隔壁が
設けられていない単一の容器内に2種以上の蒸発材料を
夫々配置し、これらの蒸発材料を同時に加熱、蒸発させ
、その蒸発面積より小さい開口を通して外方へ導出して
被蒸着基体上に恭着することを特徴とする蒸発材料収容
器の使用方法。 5、各蒸発材料を互いに異なった蒸発速度で蒸発せしめ
る、特許請求の範囲の第4項に記載した方法。 6、蒸発材料としてセレン合金を用いる、q踵’F 、
ii’7求の範囲の第4項又は第5項に記載した方法。 7、各セレン合金間において、セレン以外の同一;1−
ili #iiの成分元素の濃度が互いに異なっている
、!1¥許藺求の範囲の第6項に記載した方法。 8、各セレン合金間において、セレン以外の成分元素の
種類が互いに異なっている、特許請求のti1Σ囲の第
6項に記載した方法。
[Scope of Claims] 1. An evaporation material container used for heating and evaporating an evaporation material and configured such that the evaporation material is led out through an opening smaller than the evaporation area of the evaporation material, 2.
2 or more evaporative materials are each placed within a single container body;
An evaporative material container characterized in that there is no partition wall between each evaporable material that substantially divides the internal space of the container body. 2. The evaporative interest storage container according to claim 1, wherein heaters are arranged to heat each evaporative material, and the heaters are energized at the same time. 3. A bumping prevention plate is provided on the evaporation material! 1′
i. The evaporative interest storage device according to claim 1 or 2. 4. Two or more types of evaporation materials are placed in a single container that is not provided with partition walls that substantially divide the internal space of the container body, and these evaporation materials are simultaneously heated and evaporated. 1. A method of using an evaporation material container, characterized in that the evaporation material container is led out through an opening smaller than its area and deposited on a substrate to be evaporated. 5. The method according to claim 4, wherein each evaporation material is evaporated at different evaporation rates. 6. Use selenium alloy as evaporation material, qheel'F,
ii'7 The method described in item 4 or 5 of the scope of the request. 7. Identical other than selenium among each selenium alloy; 1-
The concentrations of the component elements of ili #ii are different from each other! 1. The method described in Section 6 of the scope of permission request. 8. The method described in item 6 of the ti1Σ section of the patent claim, wherein the types of component elements other than selenium are different among the selenium alloys.
JP15424082A 1982-09-04 1982-09-04 Vessel for storing material to be evaporated and its using method Pending JPS5943874A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15424082A JPS5943874A (en) 1982-09-04 1982-09-04 Vessel for storing material to be evaporated and its using method
US06/528,215 US4551303A (en) 1982-09-04 1983-08-31 Method of using an evaporation source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15424082A JPS5943874A (en) 1982-09-04 1982-09-04 Vessel for storing material to be evaporated and its using method

Publications (1)

Publication Number Publication Date
JPS5943874A true JPS5943874A (en) 1984-03-12

Family

ID=15579899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15424082A Pending JPS5943874A (en) 1982-09-04 1982-09-04 Vessel for storing material to be evaporated and its using method

Country Status (1)

Country Link
JP (1) JPS5943874A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021526592A (en) * 2018-06-15 2021-10-07 アルセロールミタル Vacuum deposition equipment and methods for substrate coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021526592A (en) * 2018-06-15 2021-10-07 アルセロールミタル Vacuum deposition equipment and methods for substrate coating

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