JPH06299336A - Crucible of evaporating source for vacuum deposition - Google Patents

Crucible of evaporating source for vacuum deposition

Info

Publication number
JPH06299336A
JPH06299336A JP8287793A JP8287793A JPH06299336A JP H06299336 A JPH06299336 A JP H06299336A JP 8287793 A JP8287793 A JP 8287793A JP 8287793 A JP8287793 A JP 8287793A JP H06299336 A JPH06299336 A JP H06299336A
Authority
JP
Japan
Prior art keywords
crucible
temperature
temp
thickness
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8287793A
Other languages
Japanese (ja)
Inventor
Yukio Kikuchi
幸男 菊地
Katsushi Higuchi
克志 樋口
Kenichi Takagi
憲一 高木
Toyoji Uchiyama
豊司 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP8287793A priority Critical patent/JPH06299336A/en
Publication of JPH06299336A publication Critical patent/JPH06299336A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To uniformize the temp. distribution of a crucible, to stably feed molecular beads of a material without varying the amt. with the lapse of time, to suppress a remarkable temp. drop at the opening of the crucible and to improve the quality of a formed film. CONSTITUTION:The thickness of the upper part 11a and the lower part 11c of a crucible 11 is made larger than that of the middle part 11b. A heater 12 wound around the crucible 11 is divided into two and separately wound around the upper and lower parts of the crucible 11. The ratio of the number of winding at the upper part to that at the lower part is regulated to about 4:1. Since the upper and lower parts of the crucible 11 are thicker, the surface area of the inside of the crucible is reduced and the quantity of heat radiated is reduced. As a result, the temp. in the regions is raised and the temp. of the entire crucible is acceleratedly uniformized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、分子線エピタキシー装
置(MBE)等の薄膜製造装置に用いる真空蒸着用蒸発
源に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an evaporation source for vacuum vapor deposition used in a thin film manufacturing apparatus such as a molecular beam epitaxy apparatus (MBE).

【0002】[0002]

【従来の技術】従来の真空蒸着用蒸発源に用いられるル
ツボは、図5の断面図に示すように、ルツボ1の厚みが
一定に構成されていた。このような厚み一定の従来の真
空蒸着用蒸発源のルツボでは、使用時、各部分での温度
が異なり、ルツボ全体での温度の均一性が悪かった。そ
の温度分布は図6に示されている。
2. Description of the Related Art In a conventional crucible used for a vacuum evaporation source, a crucible 1 has a constant thickness as shown in a sectional view of FIG. In the conventional evaporation source crucible for vacuum evaporation having such a constant thickness, the temperature at each portion is different during use, and the temperature uniformity in the entire crucible is poor. The temperature distribution is shown in FIG.

【0003】図6は、縦軸に温度をとり、横軸にルツボ
の長手方向の位置を示す温度分布図であって、ルツボの
底部(下部)の温度とルツボ開口部(上部)の温度が低
く、中部の温度が高くなっており、実際のルツボの使用
に当っての高低温の温度差は約40度である。
FIG. 6 is a temperature distribution chart showing the temperature in the vertical axis and the position in the longitudinal direction of the crucible in the horizontal axis. The temperature at the bottom (lower part) of the crucible and the temperature at the crucible opening (upper part) are shown in FIG. The temperature is low and the temperature in the middle is high, and the temperature difference between the high temperature and the low temperature in the actual use of the crucible is about 40 degrees.

【0004】[0004]

【発明が解決しようとする課題】上記のように厚みの一
定な従来の真空蒸着用蒸発源のルツボでは、実際の使用
に当っては高低温の温度差が大きかった。その結果、次
のような二つの現象が生じた。即ち、第1に、蒸発され
る材料の飽和蒸気圧は温度に極めて大きく依存するため
に、蒸発源から蒸発される分子線量は、材料の減少と共
に大きく変化する。第2に、既存のルツボではルツボ開
口部での温度低下が著しく、そのために蒸発した材料が
ルツボ開口部付近で再び凝固し堆積してしまう。そして
該堆積した材料がルツボ内に落下すると、溶解している
材料が粒子状になって飛び出すという突沸現象を引き起
す。
As described above, the conventional evaporation source crucible having a constant thickness has a large temperature difference between high temperature and low temperature in actual use. As a result, the following two phenomena occurred. That is, firstly, since the saturated vapor pressure of the vaporized material is very much dependent on temperature, the molecular dose vaporized from the evaporation source varies significantly with decreasing material. Secondly, in the existing crucible, the temperature drop at the crucible opening is remarkable, so that the evaporated material is solidified and deposited again near the crucible opening. Then, when the deposited material falls into the crucible, the bumping phenomenon occurs in which the melted material becomes particulate and jumps out.

【0005】以上の2点が主な原因となって、蒸着成膜
される膜質の向上を阻害したり、膜に欠陥ができ易くな
るという問題点があった。
The above-mentioned two points are the main causes of the problems that the improvement of the quality of the film formed by vapor deposition is hindered and the film is apt to have defects.

【0006】本発明は、上記した従来技術の問題点に留
意したものであり、ルツボの温度分布の均一化を図り、
材料の分子線量を時間的にゆらぎがなく安定して供給で
きるようにすると共に、ルツボ開口部での著しい温度降
下を抑制して成膜される膜質の向上を図るようにした真
空蒸着用蒸発源のルツボを提供することを目的としてい
る。
The present invention has been made in consideration of the above-mentioned problems of the prior art, and aims to make the temperature distribution of the crucible uniform,
Evaporation source for vacuum vapor deposition that enables stable supply of the molecular dose of the material with no temporal fluctuation and suppresses a significant temperature drop at the opening of the crucible to improve the quality of the deposited film. The purpose is to provide crucibles.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、真空蒸着用蒸発源で蒸発させる材料を
入れるルツボにおいて、ルツボの厚みを、該ルツボの上
部、中部及び下部のそれぞれで変化させ、ルツボの温度
分布を均一にしたことを特徴としている。
In order to achieve the above object, the present invention provides a crucible in which a material to be vaporized by an evaporation source for vacuum vapor deposition is placed, and the thickness of the crucible can be set to the upper, middle and lower portions of the crucible. The feature is that the temperature distribution of the crucible is made uniform by changing each.

【0008】上記したルツボの厚みを、該ルツボの中部
に比べて上部及び下部で厚くしたことを特徴とし、ま
た、上記ルツボの厚みを、該ルツボの下部の領域で厚く
したことを特徴としている。
It is characterized in that the thickness of the crucible described above is made thicker in the upper and lower parts than in the middle part of the crucible, and the thickness of the crucible is made thicker in the lower region of the crucible. .

【0009】[0009]

【作用】真空蒸着用蒸発源を1000℃以上の高温領域
で使用する場合には、加熱されたルツボがステファン−
ボルツマンの法則に従って熱を輻射し、その効果がルツ
ボの温度分布に大きな影響を与えるということが、温度
分布の実測及びその数値計算シュミレーションにより知
られている。
When the evaporation source for vacuum vapor deposition is used in a high temperature range of 1000 ° C or higher, the heated crucible is a stephan-
It is known from the actual measurement of the temperature distribution and its numerical calculation simulation that heat is radiated according to Boltzmann's law and the effect thereof has a great influence on the temperature distribution of the crucible.

【0010】本発明は、ルツボの厚みを上部、中部及び
下部のそれぞれで変化させており、中部に比べてルツボ
の上部及び下部でその厚みを増大させたものでは、該部
のルツボ内側での表面積を小さくすることになるので、
該ルツボ上・下部での熱輻射量を減少させることにな
り、そのため、その領域での温度を従来のものより上昇
させ、ルツボ全体の温度の均一化を促進することができ
る。この温度分布については、前記図6(従来例)と同
様の図4(本発明)にも明らかに示されており、実際の
ルツボの使用に当って、ルツボの高低湯部の温度差は約
10度まで改善されており、結果として、蒸発される材
料の分子線量の安定度は大幅に増大する。
In the present invention, the thickness of the crucible is changed at the upper part, the middle part and the lower part respectively. In the case where the thickness is increased at the upper part and the lower part of the crucible as compared to the middle part, the inside of the crucible of the part is increased. Since the surface area will be reduced,
The amount of heat radiation above and below the crucible is reduced, so that the temperature in that region can be increased more than in the conventional case, and the temperature uniformity of the entire crucible can be promoted. This temperature distribution is clearly shown in FIG. 4 (present invention) similar to FIG. 6 (conventional example), and in actual use of the crucible, the temperature difference between the high and low hot water portions of the crucible is about It has been improved to 10 degrees and, as a result, the stability of the molecular dose of vaporized material is greatly increased.

【0011】また、ルツボの厚みを下部の領域で厚くし
たものでは、主として融点の余り高くない蒸発作用の材
料が用いられ、従って開口部の温度が材料の融点よりも
高く容易に保たれ、且つルツボの下部の領域で温度の均
一化が図られる。
Further, in the case where the thickness of the crucible is made thicker in the lower region, a material having a vaporizing action whose melting point is not so high is mainly used, so that the temperature of the opening is easily kept higher than the melting point of the material, and A uniform temperature is achieved in the lower region of the crucible.

【0012】[0012]

【実施例】次に、本発明の実施例を図面と共に説明す
る。図1は、本発明の一実施例を示すルツボの断面図で
あり、図2は、該ルツボを加熱するヒータを巻きつけた
実施例の断面図である。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view of a crucible showing an embodiment of the present invention, and FIG. 2 is a sectional view of an embodiment in which a heater for heating the crucible is wound.

【0013】図1において、ルツボ11は、上部11a
と下部11cの厚さが中部11bに比べて厚く構成され
ている。
In FIG. 1, the crucible 11 has an upper portion 11a.
The lower part 11c is thicker than the middle part 11b.

【0014】また、図2において、ルツボ11の周囲に
巻かれるヒータ12は、ルツボ11の上部11aと下部
11cに離して巻かれ、上部11aに巻かれるヒータ1
2の巻き数と下部11cに巻かれるヒータ12cの巻き
数の比は、約4:1になっている。また、ルツボの長さ
が、上部aが20mm、中部bが20mm及び下部cが
30mm、合計70mmの場合、ヒータ線12の巻き数
は、上部11aで8ターン、下部11cで2ターンで、
3mmのピッチで巻かれ、また、ルツボ上部11a及び
下部11cの壁面の厚さd1 は2mm、中部11bの厚
さd2 は0.8mmであり、上部11aでは、ヒータ1
2はルツボの鍔11dにできるだけ近いところから巻き
始め、下部では、底から僅かの距離e=3mmあけて巻
かれている。
Further, in FIG. 2, the heater 12 wound around the crucible 11 is wound around the upper part 11a and the lower part 11c of the crucible 11 separately, and the heater 1 wound around the upper part 11a.
The ratio of the number of turns of 2 to the number of turns of the heater 12c wound around the lower portion 11c is about 4: 1. In addition, when the length of the crucible is 20 mm in the upper part a, 20 mm in the middle part b and 30 mm in the lower part, which is 70 mm in total, the number of turns of the heater wire 12 is 8 turns in the upper part 11 a and 2 turns in the lower part 11 c.
The crucible upper portion 11a and the lower portion 11c are wound at a pitch of 3 mm, the wall thickness d 1 of the crucible upper portion 11a is 2 mm, and the middle portion 11b has a thickness d 2 of 0.8 mm.
No. 2 starts to be wound as close as possible to the crucible collar 11d, and is wound at a lower part with a slight distance e = 3 mm from the bottom.

【0015】上記のように構成されたルツボ11の作動
時、ルツボ内の温度差は、図4に示されており、この図
4は、図6と同様に、縦軸に温度をとり、横軸にルツボ
の長手方向の位置をとっている。これによれば、ルツボ
に材料を入れる領域におけるルツボ内の温度差は、約1
0度まで改善されており、従来例(図6)の温度差40
℃の約1/3以下にすることができ、温度の均一性を向
上させることができる。
The temperature difference in the crucible when the crucible 11 configured as described above is in operation is shown in FIG. 4, which is similar to FIG. The longitudinal position of the crucible is located on the axis. According to this, the temperature difference in the crucible in the region where the material is put in the crucible is about 1
It has been improved to 0 degrees and the temperature difference of the conventional example (Fig. 6) is 40
The temperature can be about 1/3 or less of the temperature, and the temperature uniformity can be improved.

【0016】図3は、本発明の他の実施例を示すルツボ
の断面図である。この実施例は、融点の余り高くない蒸
発源用の材料を用いるルツボであって、ルツボ21の厚
みが、下部の領域21bで厚く構成されている。
FIG. 3 is a sectional view of a crucible showing another embodiment of the present invention. This embodiment is a crucible using a material for an evaporation source whose melting point is not too high, and the crucible 21 is thick in the lower region 21b.

【0017】この実施例によれば、上記のような融点の
余り高くない蒸発源用の材料を用いることにより、ルツ
ボ開口部21aの温度を材料の融点よりも高く容易に保
つことができ、且つルツボの下部の領域21bで温度の
均一化を図ることができる。
According to this embodiment, the temperature of the crucible opening 21a can be easily kept higher than the melting point of the material by using the material for the evaporation source whose melting point is not so high, and It is possible to make the temperature uniform in the region 21b below the crucible.

【0018】[0018]

【発明の効果】以上説明したように、本発明によれば、
真空蒸着用蒸発源のルツボの厚みを、該ルツボの上部、
中部及び下部のそれぞれで変化させたことにより、従来
のものに比べてルツボの温度分布の均一化を図ることが
でき、真空蒸着用蒸発源を時間的にゆらぎの少ない安定
した分子線量の供給源として利用できる。その結果とし
て蒸着成膜される膜質を向上させることができる。
As described above, according to the present invention,
The thickness of the evaporation source crucible for vacuum deposition is set to the upper part of the crucible,
The temperature distribution of the crucible can be made more uniform than that of the conventional one by changing the middle part and the lower part, and the evaporation source for vacuum deposition is a stable molecular dose source with little time fluctuation. Available as As a result, the quality of the deposited film can be improved.

【0019】特に、ルツボの厚みを、中部に比べて上部
及び下部で増すことによって、ルツボの全長に亙って温
度分布の均一化を図ることができ、また、ルツボの厚み
を、下部の領域で厚くすることにより、融点の余り高く
ない蒸発源用の材料を用いるとき、ルツボ開口部の温度
を材料の融点よりも高く容易に保つと共に、下部の領域
で温度の均一化を図ることができる。
In particular, by increasing the thickness of the crucible in the upper portion and the lower portion as compared with the middle portion, the temperature distribution can be made uniform over the entire length of the crucible, and the thickness of the crucible can be reduced in the lower region. By thickening with, it is possible to easily keep the temperature of the crucible opening higher than the melting point of the material and to make the temperature uniform in the lower region when using the material for the evaporation source whose melting point is not too high. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示すルツボの断面図であ
る。
FIG. 1 is a sectional view of a crucible showing an embodiment of the present invention.

【図2】本発明の一実施例を示すルツボにヒータを巻き
付けた断面図である。
FIG. 2 is a cross-sectional view in which a heater is wound around a crucible showing an embodiment of the present invention.

【図3】本発明の他の実施例を示すルツボの断面図であ
る。
FIG. 3 is a cross-sectional view of a crucible showing another embodiment of the present invention.

【図4】本発明のルツボ内の温度分布図である。FIG. 4 is a temperature distribution diagram in the crucible of the present invention.

【図5】従来例を示すルツボの断面図である。FIG. 5 is a sectional view of a crucible showing a conventional example.

【図6】従来のルツボ内の温度分布図である。FIG. 6 is a temperature distribution diagram in a conventional crucible.

【符号の説明】[Explanation of symbols]

11 ルツボ 11a 上部 11b 中部 11c 下部 11d 鍔 12 ヒータ 21 ルツボ 21a 開口部 21b 下部の領域 11 crucible 11a upper part 11b middle part 11c lower part 11d collar 12 heater 21 crucible 21a opening 21b lower region

───────────────────────────────────────────────────── フロントページの続き (72)発明者 内山 豊司 神奈川県茅ケ崎市萩園2500番地 日本真空 技術株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toyoji Uchiyama 2500 Hagizono, Chigasaki City, Kanagawa Japan Vacuum Technology Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 真空蒸着用蒸発源で蒸発させる材料を入
れるルツボにおいて、ルツボの厚みを、該ルツボの上
部、中部及び下部のそれぞれで変化させ、ルツボの温度
分布を均一にしたことを特徴とする真空蒸着用蒸発源の
ルツボ。
1. A crucible containing a material to be vaporized by an evaporation source for vacuum vapor deposition, characterized in that the thickness of the crucible is changed at each of the upper part, the middle part and the lower part of the crucible to make the temperature distribution of the crucible uniform. Crucible of evaporation source for vacuum evaporation.
【請求項2】 ルツボの厚みを、該ルツボの中部に比べ
て上部及び下部で厚くしたことを特徴とする請求項1記
載の真空蒸着用蒸発源のルツボ。
2. The crucible as a vapor deposition source for vacuum vapor deposition according to claim 1, wherein the crucible has an upper portion and a lower portion that are thicker than the middle portion of the crucible.
【請求項3】 ルツボの厚みを、該ルツボの下部の領域
で厚くしたことを特徴とする請求項1記載の真空蒸着用
蒸発源のルツボ。
3. A crucible as an evaporation source for vacuum vapor deposition according to claim 1, wherein the thickness of the crucible is increased in a region below the crucible.
JP8287793A 1993-04-09 1993-04-09 Crucible of evaporating source for vacuum deposition Pending JPH06299336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8287793A JPH06299336A (en) 1993-04-09 1993-04-09 Crucible of evaporating source for vacuum deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8287793A JPH06299336A (en) 1993-04-09 1993-04-09 Crucible of evaporating source for vacuum deposition

Publications (1)

Publication Number Publication Date
JPH06299336A true JPH06299336A (en) 1994-10-25

Family

ID=13786523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8287793A Pending JPH06299336A (en) 1993-04-09 1993-04-09 Crucible of evaporating source for vacuum deposition

Country Status (1)

Country Link
JP (1) JPH06299336A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402779B2 (en) * 2004-07-13 2008-07-22 Lucent Technologies Inc. Effusion cell and method for use in molecular beam deposition
US7905961B2 (en) 2005-08-31 2011-03-15 Samsung Mobile Display Co., Ltd. Linear type deposition source
US8048229B2 (en) 2005-08-31 2011-11-01 Samsung Mobile Display Co., Ltd. Apparatus for depositing an organic layer and method for controlling a heating unit thereof
KR20220032669A (en) * 2020-09-08 2022-03-15 (주)단단 Crucible for vacuum evaporation
KR20220058175A (en) * 2020-10-30 2022-05-09 (주)단단 Crucible for vacuum evaporation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7402779B2 (en) * 2004-07-13 2008-07-22 Lucent Technologies Inc. Effusion cell and method for use in molecular beam deposition
US7905961B2 (en) 2005-08-31 2011-03-15 Samsung Mobile Display Co., Ltd. Linear type deposition source
US8048229B2 (en) 2005-08-31 2011-11-01 Samsung Mobile Display Co., Ltd. Apparatus for depositing an organic layer and method for controlling a heating unit thereof
KR20220032669A (en) * 2020-09-08 2022-03-15 (주)단단 Crucible for vacuum evaporation
KR20220058175A (en) * 2020-10-30 2022-05-09 (주)단단 Crucible for vacuum evaporation

Similar Documents

Publication Publication Date Title
JPH06299336A (en) Crucible of evaporating source for vacuum deposition
US3730962A (en) Electron beam furance with material-evaporant equilibrium control
US3634647A (en) Evaporation of multicomponent alloys
US2899528A (en) Method and apparatus for supplying
US4482622A (en) Multistage deposition process
US3984585A (en) Vacuum evaporation plating method
US3506803A (en) Method and apparatus for continuous vaporization of liquids
JPH0313565A (en) Vacuum vapor deposition device
JPS5943873A (en) Vessel for storing material to be evaporated
JPS6075574A (en) Feeding method of metal by melting
US3541301A (en) Source for evaporation in a vacuum
JPH07286266A (en) Vapor deposition device and vapor deposition method
JP2502653B2 (en) Metal thin film manufacturing equipment
JPS6250460A (en) Vaporizing method
JPH05117845A (en) Device and method for film forming of compound material
JPS6138266B2 (en)
JPH0313566A (en) Production of thin film
JPS5887269A (en) Vapor source device
JPH0372152B2 (en)
JPH0559537A (en) Deposition apparatus
JPH097948A (en) Generating method for molecular beam and molecular beam cell
JPS5820749A (en) Covering of optical fiber with metal
JPS62297466A (en) Preparation of thin film
JPS63192860A (en) Boat for vacuum deposition
JPH07331420A (en) Vacuum deposition method and device therefor