JPS59176748A - Electrophotographic sensitive body - Google Patents

Electrophotographic sensitive body

Info

Publication number
JPS59176748A
JPS59176748A JP5129583A JP5129583A JPS59176748A JP S59176748 A JPS59176748 A JP S59176748A JP 5129583 A JP5129583 A JP 5129583A JP 5129583 A JP5129583 A JP 5129583A JP S59176748 A JPS59176748 A JP S59176748A
Authority
JP
Japan
Prior art keywords
layer
halogen
evaporation source
photoreceptor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5129583A
Other languages
Japanese (ja)
Other versions
JPH0261741B2 (en
Inventor
Mitsuhiro Yoshitome
吉留 光広
Masahito Sato
佐藤 正仁
Osamu Ogino
修 荻野
Yoshitoshi Nakajima
中島 佐敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Yamanashi Electronics Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Yamanashi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd, Yamanashi Electronics Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP5129583A priority Critical patent/JPS59176748A/en
Publication of JPS59176748A publication Critical patent/JPS59176748A/en
Publication of JPH0261741B2 publication Critical patent/JPH0261741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Abstract

PURPOSE:To obtain an electrophotographic sensitive body low in residual potential and stable in acceptance potential by forming an Se-Te halogen layer and an Se-Te layer on a conductive substrate. CONSTITUTION:The first evaporation source contg. 3-14wt% Se and Te and 2- 1,000ppm halogen and the second evaporation source contg. 3-25wt% Se and Te are arranged in a vacuum vessel, and the first evaporation source is heated to vapor deposit a 20-80mum thick Se-Te halogen layer 2 on a conductive substrate 1, and then, the second evaporation source is heated to vapor deposit a 2-10mum thick Se-Te layer 3 on the layer 2.

Description

【発明の詳細な説明】 本発明は電子写真用感光体の構造に関するものである。[Detailed description of the invention] The present invention relates to the structure of an electrophotographic photoreceptor.

従来から導電性支持体上にセレン(Se )−テルル(
Te )−ハロゲン層を設けた感光体が知られている。
Conventionally, selenium (Se)-tellurium (
A photoreceptor provided with a Te)-halogen layer is known.

この感光体はSeにTeを添加することにより感光波長
を長波長側まで伸して高感度化し、また全層に渡ってT
eが添加されているので耐刷性が向上する。更にハロゲ
ンを添加することにより残留電位が高いという5e−T
e合金のり亥点をなくしている。しかしなか2 らこのハロゲンを添加した感光体は複写機で連続コピー
を行うとコピー101数の増加とともに感光体の帯電電
位が除々に低くなり、このためコピー画像の#度も低下
し実用に供し難いことである。
This photoreceptor has high sensitivity by adding Te to Se to extend the photosensitive wavelength to the long wavelength side, and also has T
Since e is added, printing durability is improved. Furthermore, 5e-T has a high residual potential due to the addition of halogen.
E-alloy glue points are eliminated. However, when this halogen-added photoreceptor is used for continuous copying in a copying machine, the charged potential of the photoreceptor gradually decreases as the number of copies increases, and as a result, the # degree of the copied image also decreases, making it unusable for practical use. This is difficult.

第−表はこの帯電電位が除々に低くなる放置を肌べた結
り;ごである。即ち第−表はアルミニウムドラム上にB
e(86重量%) −T e (14重量%)合りと5
e(86重プラー)−Te (141E債%)−塩素(
30ppm)合金とを同一条件で蒸着したときの特性の
違いを示す4寺4ヰ。
Table 1 shows how the charged potential gradually decreases after being left unused. That is, Table 1 shows that B is placed on an aluminum drum.
e (86% by weight) - T e (14% by weight) and 5
e (86 double puller) - Te (141E bond%) - chlorine (
30ppm) alloy, which shows the difference in properties when deposited under the same conditions.

(なお塩素はse&Q・Teの合計前を100%とした
ときの添加量である。) く第−表〉 ■、:複写機内での1回目の帯電電位 ■、。。:複写機内で500回繰り返しをおこなった後
の帯′WL電位 VR,。。:複写機内で500回繰り返しをおこなった
後の残留電位 第−表から解るように5e−Te−塩素合金では残留電
位は低いが帯電電位の低下が棒端に大きい。
(The amount of chlorine added is based on 100% before the sum of se, Q, and Te.) Table 1 ■: First charging potential in the copying machine ■. . : Band'WL potential VR after 500 repetitions in the copying machine. . : As can be seen from the table of residual potential after 500 repetitions in a copying machine, the residual potential is low in the 5e-Te-chlorine alloy, but the drop in charging potential is large at the rod end.

またこれらの両方の感光体の支持体側から表面1こ向っ
てのTe濃度を測定した結果両感光体ともほとんど同じ
分布をしていた。これらの二つのことから帯aX位の大
きく低下する原因は′rCの分布状態に起因しているの
ではなく合金中の塩素に起因していることが判明し、ま
た理論的には5e−Te合金に塩素が添加されることに
より8e−Te合金の抵抗率が低くなる。その結果5e
−Te−塩素よりなる感光層においては表面に電荷保持
のための十分なブロッキング層が形成されないことが考
えられる。本発明は以上の点を考慮してなされたもので
、残留電位が低くまた帯電電位の安定した感光体を得る
ことにある。
Further, when the Te concentration was measured from the support side to the surface of both photoreceptors, it was found that both photoreceptors had almost the same distribution. From these two facts, it was found that the cause of the large decrease in the a The addition of chlorine to the alloy lowers the resistivity of the 8e-Te alloy. As a result 5e
It is thought that in the photosensitive layer made of -Te-chlorine, a sufficient blocking layer for charge retention is not formed on the surface. The present invention has been made in consideration of the above points, and an object of the present invention is to obtain a photoreceptor having a low residual potential and a stable charging potential.

以上本発明を図面に基づいて説明する。The present invention will be described above based on the drawings.

第1図件本発明の一実施例による電子写真用感tよ 光体の断面図を示す。図において工は導電性の支持体、
2は20〜804mの厚みを持ち5e−Te−ハロゲン
よりなる第一層、3は2〜10μmの厚みを持ち5e−
Teよりなる第二層である。この感光体において第一7
12のTe濃度としては3〜14%、第二層3のTe濃
度としては3〜25%が適当である。第一層2のTe濃
度が3%より少ないと繰り返しによる残留電位の上昇が
あり、14%より多いと抵抗が低くなりすぎて電荷を保
持しにくくなる。第二層3はTe濃度が3%より少ない
と残留電位の上昇がありまた低い感度しか得られない。
FIG. 1 shows a sectional view of an electrophotographic photosensitive material according to an embodiment of the present invention. In the figure, the material is a conductive support.
2 has a thickness of 20 to 804 m and is a first layer made of 5e-Te-halogen; 3 has a thickness of 2 to 10 μm and is a 5e-
This is the second layer made of Te. In this photoreceptor, the first 7
Appropriately, the Te concentration of the second layer 3 is 3 to 14%, and the Te concentration of the second layer 3 is 3 to 25%. If the Te concentration of the first layer 2 is less than 3%, the residual potential increases due to repetition, and if it is more than 14%, the resistance becomes too low and it becomes difficult to retain charge. If the Te concentration of the second layer 3 is less than 3%, the residual potential increases and only low sensitivity can be obtained.

一方25%より多くなると暗減衰の増加などがあり好ま
しくない。厚さは第一層2は20〜80μm、第二層3
は2〜10βmが適当である。第一層2の厚みが30j
1mより薄いと容量が大きくなるため帯電電位の乗りが
悪く、804mより厚くなると残留電位が増加する。ま
た、第二層3の厚みが104mより厚くなると繰り返し
による残留電位の上昇があり、2μmより薄いと帯電電
位の低下を防止する効果が少ない。
On the other hand, if it exceeds 25%, dark decay may increase, which is undesirable. The thickness of the first layer 2 is 20 to 80 μm, and the thickness of the second layer 3
A suitable value is 2 to 10 βm. The thickness of the first layer 2 is 30j
If it is thinner than 1 m, the capacitance becomes large and the charging potential will not ride well, and if it is thicker than 804 m, the residual potential will increase. Moreover, if the thickness of the second layer 3 is thicker than 104 m, the residual potential increases due to repetition, and if it is thinner than 2 μm, there is little effect in preventing a decrease in the charging potential.

ハロゲンとしては、塩素、沃素、沸素、臭素が用いられ
主に残留電位を低くする役目を果している。ハロゲンの
添加量としては2〜11000ppが適当であり、2p
pmより少ないと残留電位を低くする効果がな(100
0ppmより多いと他の電気特性を悪化する。(例えば
暗減衰の増加)本発明において第二層3のT e濃度は
第一層2のTe8度と比べて必ずしも高濃度である必要
はなく、第二層3にハロゲンを含まないことが重要であ
る。
As the halogen, chlorine, iodine, fluorine, and bromine are used, and they mainly play the role of lowering the residual potential. The appropriate amount of halogen added is 2 to 11,000 pp;
If it is less than pm, there is no effect of lowering the residual potential (100
If the amount is more than 0 ppm, other electrical characteristics will deteriorate. (For example, increase in dark decay) In the present invention, the Te concentration of the second layer 3 does not necessarily have to be higher than the Te8 degree of the first layer 2, and it is important that the second layer 3 does not contain halogen. It is.

本発明の感光体は以下の方法により製作できる。The photoreceptor of the present invention can be manufactured by the following method.

(1)S e−T e−ハロゲンとS e −T eと
を別々の二つの蒸発源に入れる。まず5e−Te−ハロ
ゲンの蒸発源を加熱し第一層を蒸着する蒸着終了後8e
−Teの蒸発弥を加熱し第一層上に第二層を蒸着する。
(1) Se-Te-halogen and Se-Te are placed in two separate evaporation sources. First, the evaporation source of 5e-Te-halogen is heated to deposit the first layer.After the completion of the evaporation, 8e
- The second layer is deposited on the first layer by heating the Te evaporator.

(2)  S e −T eとSe−ハロゲンとを別り
の二つの蒸発源に入れる。二つの蒸発源を同時に加熱し
蒸着し、Se−ハロゲンの蒸発源の方が所定の時間だけ
早く蒸着が終了するよう設定しておく。
(2) Put Se-Te and Se-halogen into two separate evaporation sources. The two evaporation sources are heated and evaporated simultaneously, and the evaporation source for Se-halogen is set so that the evaporation ends earlier by a predetermined time.

以下実施例により詳しく説明する。This will be explained in detail below using examples.

〈実施例1〉 真空槽内にステンレス製の二つの蒸発源を用意し、第一
蒸発源には8e(88重景%)−Te(12重量%)−
塩素(100ppm)を入れ第二蒸発源には5e(78
重量%)−Te(22重景%)を入れた。次いで5 x
 10 ”” mmHgの真空度でまず第一蒸発源を3
00℃に加熱して70℃に保持されたアルミニウムドラ
ム上に55μmの厚みを持つ第一層を形成した。次に第
一蒸発源の蒸着終了後真空を破ることなく第二蒸発源を
310℃に加熱し第一層上に5μmの厚みを持つ第二層
を形成し本発明の感光体を得た。
<Example 1> Two evaporation sources made of stainless steel were prepared in a vacuum chamber, and the first evaporation source contained 8e (88% by weight) -Te (12% by weight) -
Add chlorine (100 ppm) and use 5e (78
%)-Te (22% by weight) was added. then 5 x
First, the first evaporation source was
A first layer having a thickness of 55 μm was formed on an aluminum drum heated to 00° C. and maintained at 70° C. Next, after the vapor deposition of the first evaporation source was completed, the second evaporation source was heated to 310° C. without breaking the vacuum to form a second layer having a thickness of 5 μm on the first layer, thereby obtaining a photoreceptor of the present invention.

一方比較のために8e(88重量%) −T e(12
重量%)−塩素(100ppm)のみを蒸発源に入れ前
と同じ蒸着条件でアルミニウムドラム上に60μ蒸着し
た。この二つの感光体を市販の複写機に装着し初期帯電
電位を600■に設定し繰り返しをおこなった結果を第
二光に示す。本発明の二層構造感光体は残留電位が低く
また繰り返しによる帯電電位の低下もほとんどなく良好
な特性を示した。
On the other hand, for comparison, 8e (88% by weight) -T e (12
Weight %) - Only chlorine (100 ppm) was added to the evaporation source and 60 μm of chlorine was deposited on an aluminum drum under the same deposition conditions as before. These two photoreceptors were installed in a commercially available copying machine, the initial charging potential was set to 600 Å, and the results were repeated as shown in the second light. The two-layer structure photoreceptor of the present invention exhibited good characteristics, with a low residual potential and almost no decrease in charging potential due to repetition.

第二光 VI :複写機内での1回目の帯電電位VR# lle
 ’ 1Ji写機内で500回繰り返しをおこなった後
の残留電位 〈実施例2〉 真空槽内にステンレス製の二つの蒸発臨を用意し第一蒸
発源には8e(90重員%)−Te(10重量%)、第
二蒸発源にはSe−塩素(300ppm)を入れた。こ
の第−及び第二蒸発源は単独で蒸着したときには第二光
に示すような蒸着スピード及び厚みが得られるように前
もって設定されている。
Second light VI: First charging potential VR# lle in the copying machine
'Residual potential after 500 repetitions in a 1Ji photocopier <Example 2> Two stainless steel evaporators were prepared in a vacuum chamber, and the first evaporator was 8e (90% by weight)-Te( Se-chlorine (300 ppm) was added to the second evaporation source. The first and second evaporation sources are set in advance so that when deposited alone, the evaporation speed and thickness shown in the second light are obtained.

第−及び第二蒸発源に同時に通電し第一蒸発源を300
℃、第二蒸発源を280℃に加熱し、21分間蒸着して
アルミニウムドラム上に60μmの感光層を得た。この
ときアルミニウムドラムの表面は70℃に保持された。
The first and second evaporation sources are energized at the same time, and the first evaporation source is
℃, the second evaporation source was heated to 280° C., and evaporation was carried out for 21 minutes to obtain a 60 μm photosensitive layer on the aluminum drum. At this time, the surface of the aluminum drum was maintained at 70°C.

第二蒸発源は18分の時点で蒸発が終了しているのでこ
こ1こ得られた感光体は表面から6μmの厚みにおいて
はT e −T eのみよりなる本発明の感光体である
。この感光体を上記と同様に複写機に装着し初期帯電電
位を600Vに設定し繰り返しをおこなった。その結果
は実施例1の本発明の感光体とほぼ同じであり良好な特
性であった。
Since evaporation of the second evaporation source was completed at the time of 18 minutes, the photoreceptor thus obtained was the photoreceptor of the present invention consisting only of T e - T e in the thickness of 6 μm from the surface. This photoreceptor was installed in a copying machine in the same manner as above, the initial charging potential was set to 600V, and the process was repeated. The results were almost the same as those of the photoreceptor of the present invention in Example 1, and the characteristics were good.

以上のように本発明によれは帯電電位の安定性に優れ、
また非常に低い残留電位を持つ感光体が得られるので実
用上の効果は極めて大きい。
As described above, the present invention has excellent charging potential stability,
Further, since a photoreceptor having a very low residual potential can be obtained, the practical effect is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による感光体の断面図である。 1は導電性の支持体、2は第一層(8e−Te−ハロゲ
ン層)、3は第2層(8e −Te N )である。 特許出願人 新電元工業株式会社 山梨電子工業株式会社
FIG. 1 is a sectional view of a photoreceptor according to the present invention. 1 is a conductive support, 2 is a first layer (8e-Te-halogen layer), and 3 is a second layer (8e-TeN). Patent applicant Shindengen Kogyo Co., Ltd. Yamanashi Electronics Kogyo Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 導電性支持体上に厚さ20μm乃至goamののセレン
(Se )、テルル(Te)lXロゲンよ(Se)、テ
ルル(Te)より成る第2層を積層すると共に前記第一
層中のテルル濃度を3乃至14重量%、第2層中のテル
ル濃度を3乃至25重景%に設定したことを特徴とする
電子写真用感光体。
A second layer consisting of selenium (Se), tellurium (Te), lxrogen (Se), and tellurium (Te) having a thickness of 20 μm to 30 μm is laminated on the conductive support, and the tellurium concentration in the first layer is laminated. A photoreceptor for electrophotography, characterized in that the tellurium concentration in the second layer is set at 3 to 14% by weight, and the tellurium concentration in the second layer is set at 3 to 25% by weight.
JP5129583A 1983-03-26 1983-03-26 Electrophotographic sensitive body Granted JPS59176748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5129583A JPS59176748A (en) 1983-03-26 1983-03-26 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5129583A JPS59176748A (en) 1983-03-26 1983-03-26 Electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS59176748A true JPS59176748A (en) 1984-10-06
JPH0261741B2 JPH0261741B2 (en) 1990-12-20

Family

ID=12882925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5129583A Granted JPS59176748A (en) 1983-03-26 1983-03-26 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS59176748A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02157849A (en) * 1988-12-12 1990-06-18 Fuji Electric Co Ltd Selenium photosensitive body for electrophotography

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07257274A (en) * 1994-03-18 1995-10-09 Hiroshi Enomoto U-turn indication device of automatic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02157849A (en) * 1988-12-12 1990-06-18 Fuji Electric Co Ltd Selenium photosensitive body for electrophotography

Also Published As

Publication number Publication date
JPH0261741B2 (en) 1990-12-20

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