JPH0239787B2 - - Google Patents

Info

Publication number
JPH0239787B2
JPH0239787B2 JP59274419A JP27441984A JPH0239787B2 JP H0239787 B2 JPH0239787 B2 JP H0239787B2 JP 59274419 A JP59274419 A JP 59274419A JP 27441984 A JP27441984 A JP 27441984A JP H0239787 B2 JPH0239787 B2 JP H0239787B2
Authority
JP
Japan
Prior art keywords
selenium
arsenic
ppm
oxygen
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59274419A
Other languages
Japanese (ja)
Other versions
JPS61156134A (en
Inventor
Osamu Oda
Arata Onozuka
Akio Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP27441984A priority Critical patent/JPS61156134A/en
Publication of JPS61156134A publication Critical patent/JPS61156134A/en
Publication of JPH0239787B2 publication Critical patent/JPH0239787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207Selenium-based

Description

【発明の詳細な説明】 発明の分野 本発明は、セレン−砒素−酸素系電子写真感光
材料並びに該材料を真空蒸着させることにより作
製された感光層を具備する電子写真感光体に関す
るものである。従来提唱されたセレン−砒素−塩
素系において取扱い上問題の多い塩素の代りに酸
素を使用して、暗減衰特性を良好に保つたまま残
留電位を減少させることに成功したものである。
本発明は、単層型電子写真感光体の感光層のみな
らず、積層型電子写真感光体の感光層にも適用す
ることができる。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a selenium-arsenic-oxygen-based electrophotographic photosensitive material and an electrophotographic photoreceptor comprising a photosensitive layer prepared by vacuum-depositing the material. By using oxygen instead of chlorine, which is problematic in handling in the selenium-arsenic-chlorine system proposed in the past, we have succeeded in reducing the residual potential while maintaining good dark decay characteristics.
The present invention can be applied not only to the photosensitive layer of a single-layer electrophotographic photoreceptor, but also to the photosensitive layer of a laminated electrophotographic photoreceptor.

発明の背景 電子写真法は、物質の光導電性と静電気現象を
利用した写真法であり、幾つかの方式が確立され
ているが、そのうちセレン或いはセレン合金蒸着
膜を電子写真感光層として使用し、転写によつて
電子写真を得る方式をゼロツクス法と呼んでい
る。ゼロツクス法は、周知の通り、下記の過程か
ら成つている: (a) 帯電:金属基板上に暗抵抗の高い無定形セレ
ン或いはセレン合金を蒸着した感光体の表面を
帯電させる。
Background of the Invention Electrophotography is a photographic method that utilizes the photoconductivity of substances and electrostatic phenomena, and several methods have been established. The method of obtaining electrophotography by transfer is called the Xerox method. As is well known, the Xerox method consists of the following steps: (a) Charging: The surface of a photoreceptor, in which amorphous selenium or selenium alloy with high dark resistance is deposited on a metal substrate, is charged.

(b) 露光(焼付):光像で露光すると光の照射を
受けた部分のセレン或いはセレン合金は電気抵
抗が下がり、表面の帯電電荷は金属基板へ逃
げ、感光板上の残存電荷密度は露光量に応じて
差を生じ、感光板面上に原画と同形の静電潜像
ができる。
(b) Exposure (printing): When exposed to a light image, the electrical resistance of the selenium or selenium alloy in the irradiated area decreases, the surface charge escapes to the metal substrate, and the remaining charge density on the photosensitive plate decreases due to exposure. A difference occurs depending on the amount, and an electrostatic latent image with the same shape as the original image is formed on the surface of the photosensitive plate.

(c) 現像:上記感光板表面に炭素微粉を樹脂で被
覆したトナーとガラス小球から成るキヤリヤの
混合粉をふりかけることによつて潜像部にトナ
ーが付着し、潜像は可視像となる。
(c) Development: By sprinkling the surface of the photosensitive plate with a mixed powder of toner made of fine carbon powder coated with resin and carrier consisting of glass beads, the toner adheres to the latent image area, and the latent image becomes a visible image. Become.

(d) 転写:現像を終えた上記感光板表面に適当な
紙を載せ、背面からをコロナ放電を行なわせる
と、感光板上のトナーは紙に吸引され、トナー
粉像は紙に転写される。
(d) Transfer: When a suitable paper is placed on the surface of the photosensitive plate after development and a corona discharge is applied from the back side, the toner on the photosensitive plate is attracted to the paper and the toner powder image is transferred to the paper. .

(e) 定着:転写を紙えた紙を剥がし、赤外線ヒー
タで加熱してトナーの樹脂を紙に溶着させる。
(e) Fixing: Peel off the paper with the transfer and heat it with an infrared heater to fuse the toner resin to the paper.

複写機用感光体は通常アルミニウム等製ドラム
の表面にセレン或いはセレン合金を真空蒸着する
ことにより作製される。また、機能分離型と呼ば
れる複層構造を採用した感光体も提唱されてい
る。例えば、2層構造の場合、光照射を直接受
け、紙面と接触する第一層(表面層)には、長波
長感度や耐摩耗性に優れたSe−Te系合金やSe−
As系合金が用いられそして第二層(基板側層)
には純セレンを用いられる。第一層はC.G.L.
(Charge Generation Layer)と呼ばれそして第
二層はC.T.L.(Charge Transfer Layer)と呼ば
れている。
A photoreceptor for a copying machine is usually manufactured by vacuum-depositing selenium or a selenium alloy on the surface of a drum made of aluminum or the like. Furthermore, a photoreceptor employing a multilayer structure called a functionally separated type has also been proposed. For example, in the case of a two-layer structure, the first layer (surface layer) that is directly exposed to light and in contact with the paper surface is made of a Se-Te alloy with excellent long-wavelength sensitivity and wear resistance.
As-based alloy is used and the second layer (substrate side layer)
Pure selenium is used for The first layer is CGL
(Charge Generation Layer) and the second layer is called CTL (Charge Transfer Layer).

複写された像の鮮明さ、再現性等の特性は、単
層構造の場合には蒸着膜そのものまた複層構造の
場合には上記C.T.L.(これらを包括して感光層と
呼ぶ)の性能に大きく左右される。
The sharpness, reproducibility, and other characteristics of the copied image greatly depend on the performance of the deposited film itself in the case of a single-layer structure, or the performance of the above-mentioned CTL (collectively referred to as the photosensitive layer) in the case of a multi-layer structure. Depends on it.

感光層の性能の判定には、(イ)一定出力のコロナ
放電により与えられる帯電電荷量を表すコロナ放
電特性、(ロ)コロナ放電により帯電された感光体を
保持する間に失われる荷電量と関係する暗減衰特
性、(ハ)暗中で保持された荷電量が露光によつて消
失する速度を表す帯電圧露光減衰特性、(ニ)感光体
を露光させた後零まで消失せずに残る電位を表す
残留電位等が考慮される。
In order to judge the performance of the photosensitive layer, (a) corona discharge characteristics representing the amount of charge given by corona discharge with a constant output, and (b) the amount of charge lost while holding the photoreceptor charged by corona discharge. Related dark decay characteristics, (c) charge voltage exposure decay characteristics that indicate the speed at which the amount of charge held in the dark disappears due to exposure, and (d) potential that remains without disappearing to zero after exposing the photoreceptor to light. Residual potential, etc. representing , are considered.

電子写真のコントラストや画質並びに感光層の
特性の安定化のためには、上記のうちでも特に暗
減衰が小さくしかも残留電位が小さいことが求め
られる。純セレンは残留電位が比較的高いため、
セレンの残留電位が減少させるべつ塩素の添加が
行われてきた。10ppm以下の微量の塩素添加によ
つて残留電位は減少するものの、暗減衰特性が劣
化するという欠点があつた。また、10ppm以下の
微量の塩素の添加は困難であり、生産性にも問題
があつた。
In order to stabilize the contrast and image quality of electrophotography as well as the characteristics of the photosensitive layer, it is particularly required that the dark decay is low and the residual potential is low. Pure selenium has a relatively high residual potential, so
Additions of chlorine have been used to reduce the residual potential of selenium. Although the residual potential was reduced by adding a trace amount of chlorine of 10 ppm or less, it had the disadvantage of deteriorating the dark decay characteristics. Furthermore, it was difficult to add a trace amount of chlorine of 10 ppm or less, and there were also problems in productivity.

こうした欠点を改善するために、セレンに砒素
と塩素とを同時に添加することが行われている。
例えば特開昭58−11950号は、セレンに対して塩
素を5〜300ppm、砒素を0.01〜0.5重量%含有
し、かつ塩素と砒素の含有割合が250〜
1200ppm/重量%である感光体を開示している。
In order to improve these drawbacks, arsenic and chlorine are simultaneously added to selenium.
For example, JP-A-58-11950 contains 5 to 300 ppm of chlorine and 0.01 to 0.5% by weight of arsenic to selenium, and the content ratio of chlorine and arsenic is 250 to 300 ppm.
Discloses a photoreceptor that is 1200 ppm/wt%.

こうしてセレン−砒素−塩素系材料は比較的優
れた性能を示しはするが、塩素は通常四塩化セレ
ンの形で添加され、潮解性が強く、気化しやすい
等取扱い上の問題が多い。
Thus, selenium-arsenic-chlorine materials exhibit relatively excellent performance, but chlorine is usually added in the form of selenium tetrachloride, and there are many problems in handling, such as strong deliquescent properties and easy vaporization.

従つて、塩素添加より問題が少なく、容易に添
加でき、しかも少くとも匹敵しうる電子写真特性
が得られる代替元素が得られれば、生産技術上き
わめて有益である。
Therefore, it would be extremely beneficial from a production technology perspective if an alternative element could be found that is less problematic than the addition of chlorine, can be easily added, and yet provides at least comparable electrophotographic properties.

発明の概要 こうした観点の下で、多くの元素を試験した結
果、酸素が代替役を果しうることが判明した。
SUMMARY OF THE INVENTION With this in mind, a number of elements were tested and it was found that oxygen could serve as a substitute.

従つて、本発明は、 1 セレンに10〜10000ppm砒素及び1〜
1000ppm酸素を添加したことを特徴とする電子
写真用感光材料、 2 セレンに10〜10000ppm砒素及び1〜
1000ppm酸素を添加した薄膜形成用材を用いて
導電性基板上に形成した薄膜感光層を具備する
電子写真感光体、及び 3 積層型電子写真感光体において、セレンに10
〜10000ppm砒素及び1〜1000ppm酸素を添加
した薄膜形成用材を用いて導電性基板上に形成
した薄膜感光層を一層または複数層設けた電子
写真感光体 を提供する。
Therefore, the present invention provides 1 selenium with 10 to 10000 ppm arsenic and 1 to 10000 ppm arsenic.
A photosensitive material for electrophotography characterized by adding 1000 ppm oxygen, 2. 10 to 10000 ppm arsenic to selenium, and 1.
3. An electrophotographic photoreceptor comprising a thin film photosensitive layer formed on a conductive substrate using a thin film forming material containing 1000 ppm oxygen, and 3. In a laminated electrophotographic photoreceptor, 10% of selenium is added.
Provided is an electrophotographic photoreceptor having one or more thin film photosensitive layers formed on a conductive substrate using a thin film forming material to which ~10,000 ppm arsenic and 1~1,000 ppm oxygen are added.

発明の具体的説明 本発明において用いられるセレンとしては4N
〜5Nの従来品グレードのものも用いることが可
能と思われるが、最近はより高純度品(6N)の
製造も為されており、本発明においてもそうした
高純度(6N)のものを使用することが好ましい。
高純度セレンの方が不純物トラツプが少なく、残
留電位が小さい。例えば従来品のセレンは47Vの
残留電位を示すのに対し、6N純度の高純度セレ
ンの残留電位は28Vである。
Specific description of the invention The selenium used in the present invention is 4N
Although it seems possible to use a conventional grade of ~5N, recently a higher purity product (6N) has also been manufactured, and such a high purity (6N) product is also used in the present invention. It is preferable.
High-purity selenium has fewer impurity traps and a lower residual potential. For example, conventional selenium exhibits a residual potential of 47V, while high-purity selenium with 6N purity has a residual potential of 28V.

本発明においては、1〜1000ppm酸素が残留電
位低減目的に添加される。酸素添加量は、セレン
の純度に依存するが、ほぼ10Vの残留電位を与え
るよう選択される。1000ppmを越えて酸素を添加
しても効果は実質上飽和する。また、酸素を
1000ppmを越えて添加すると蒸着時に突沸が起り
やすくなり、蒸着膜に欠陥が生じる。砒素は主に
暗減衰特性の悪化を防止するために酸素量に応じ
て添加され、上記酸素量範囲に対して10〜
10000ppmの範囲で添加されうる。上記範囲の酸
素と砒素が協作用して、暗減衰特性を良好に保つ
たまま残留電位を減少させることができる。好ま
しい範囲は砒素100〜10000ppm及び酸素10〜
1000ppmである。
In the present invention, 1 to 1000 ppm oxygen is added for the purpose of reducing residual potential. The amount of oxygen added depends on the purity of the selenium, but is chosen to give a residual potential of approximately 10V. Even if oxygen is added in excess of 1000 ppm, the effect is substantially saturated. Also, oxygen
When added in excess of 1000 ppm, bumping tends to occur during vapor deposition, causing defects in the vapor deposited film. Arsenic is added depending on the amount of oxygen mainly to prevent deterioration of dark decay characteristics, and is
It can be added in a range of 10000ppm. Oxygen and arsenic in the above range cooperate to reduce the residual potential while maintaining good dark decay characteristics. The preferred range is arsenic 100-10000ppm and oxygen 10-1000ppm.
It is 1000ppm.

酸素はSeO2またはSe−SeO2から作つた母合金
の形で或いは酸素バブリングによつて添加され、
これは塩素添加の場合に較べて取扱い上何ら支障
がない。砒素は、純砒素或いはSe−As合金或い
はAs2Se3の形で添加される。
Oxygen is added in the form of a master alloy made from SeO 2 or Se-SeO 2 or by oxygen bubbling;
This poses no problem in handling compared to the case of adding chlorine. Arsenic is added in the form of pure arsenic, Se-As alloy, or As 2 Se 3 .

こうして得られる蒸着膜としてのセレン−砒素
−酸素感光材料をドラム導電性基板上に真空蒸着
することによつて電子写真用感光体が得られる。
感光体としては、前述の通り単層型及び積層型の
ものが実用化されている。後者の場合、本発明感
光材料は感光層の形成に使用される。
An electrophotographic photoreceptor is obtained by vacuum-depositing the selenium-arsenic-oxygen photosensitive material as a vapor-deposited film on a drum conductive substrate.
As mentioned above, single-layer type and laminated type photoreceptors have been put into practical use. In the latter case, the photosensitive material of the present invention is used to form a photosensitive layer.

真空蒸着の条件は特に限定されるものでなく、
通常実施されている条件で十分である。蒸着源温
度250〜350℃、基板温度55〜75℃、真空度10-5
10-6Torr、蒸着時間60〜130分の範囲で滴宜の条
件を選択して実施しうる。基板としては、アルミ
ニウム、鋼等の金属或いは金属化された紙或いは
プラスチツク等が用いられる。
The conditions for vacuum evaporation are not particularly limited;
The conditions normally practiced are sufficient. Evaporation source temperature 250 to 350℃, substrate temperature 55 to 75℃, degree of vacuum 10 -5 to
The deposition can be carried out by selecting appropriate conditions within the range of 10 −6 Torr and deposition time of 60 to 130 minutes. As the substrate, a metal such as aluminum or steel, metalized paper, or plastic is used.

発明の効果 セレンに砒素と酸素を同時添加することによ
り、砒素と酸素の同時添加に少くとも匹敵する効
果が得られる。酸素の添加は塩素の添加に較べて
取扱い上容易であり、生産技術上のメリツトは非
常に大きい。
Effects of the Invention By simultaneously adding arsenic and oxygen to selenium, an effect at least comparable to the simultaneous addition of arsenic and oxygen can be obtained. Addition of oxygen is easier to handle than addition of chlorine, and has great advantages in terms of production technology.

実施例 Se−As−O合金を作製するため、日本鉱業(株)
製高純度セレン(6N)と砒素(6N)及び二酸化
セレン(4N)をそれぞれ所定量秤取し、30mm外
径×220mm長さのパイレツクスアンプル中に真空
封入した。これを揺動加熱炉中で10回/分の速さ
で揺動させながら550℃において2時間溶製した。
その後、アンプルを粉砕して合金を取出した。
Example: To produce Se-As-O alloy, Nippon Mining Co., Ltd.
Predetermined amounts of manufactured high-purity selenium (6N), arsenic (6N), and selenium dioxide (4N) were each weighed out and vacuum-sealed into a Pyrex ampoule with an outer diameter of 30 mm and a length of 220 mm. This was melted at 550° C. for 2 hours while rocking at a rate of 10 times/minute in a rocking heating furnace.
Thereafter, the ampoule was crushed to remove the alloy.

このようにして作製した合金を抵抗加熱により
55mm×55mmの鏡面仕上げアルミニウム基板上に真
空蒸着した。蒸着条件は次の通りである。
The alloy produced in this way is heated by resistance heating.
Vacuum deposition was performed on a 55 mm x 55 mm mirror-finished aluminum substrate. The deposition conditions are as follows.

蒸発源温度 300℃ 基板温度 70℃ 真空度 2×10-6Torr 蒸着時間 90分間 以上の条件によりアルミニウム基板上へ形成し
た蒸着膜の厚さは、いずれも約50μmであつた。
Evaporation source temperature: 300°C Substrate temperature: 70°C Vacuum degree: 2×10 -6 Torr Vapor deposition time: 90 minutes The thickness of the deposited film formed on the aluminum substrate under the above conditions was approximately 50 μm.

こうして得られた合金蒸着膜について静電試験
装置を用いて電子写真特性を測定した。測定条件
は次の通りである。
The electrophotographic properties of the alloy vapor-deposited film thus obtained were measured using an electrostatic testing device. The measurement conditions are as follows.

コロナ放電電圧 5kV 光照射時間 2秒間 光照度 3000ルクス 繰返し数 200回 Asを2000ppm一定とし、酸素を1ppmから
1000ppmまで添加した結果を図面に示す。第1図
において、曲線は初期表面電位V0を示しそし
て曲線は暗状態保持10秒後の電位V10である。
第2図は残留電位を示す。図面から、暗減衰特性
を劣化させることなく残留電位を減少させうるこ
とがわかる。
Corona discharge voltage 5kV Light irradiation time 2 seconds Light illuminance 3000 lux Number of repetitions 200 As constant at 2000ppm, oxygen from 1ppm
The results of adding up to 1000 ppm are shown in the drawing. In FIG. 1, the curve shows the initial surface potential V 0 and the curve is the potential V 10 after 10 seconds of dark state retention.
Figure 2 shows the residual potential. From the drawings, it can be seen that the residual potential can be reduced without deteriorating the dark decay characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は砒素2000ppm一定として酸素添加量と
表面電位の関係を示すグラフであり、そして第2
図は同じく酸素添加量と残留電位の関係を示すグ
ラフである。
Figure 1 is a graph showing the relationship between the amount of oxygen added and the surface potential with a constant arsenic concentration of 2000ppm, and the second
The figure is also a graph showing the relationship between the amount of oxygen added and the residual potential.

Claims (1)

【特許請求の範囲】 1 セレンに10〜10000ppm砒素及び1〜
1000ppm酸素を添加したことを特徴とする電子写
真用感光材料。 2 セレンに10〜10000ppm砒素及び1〜
1000ppm酸素を添加した薄膜形成用材を用いて導
電性基板上に形成した薄膜感光層を具備する電子
写真感光体。 3 積層型電子写真感光体において、セレンに10
〜10000ppm砒素及び1〜1000ppm酸素を添加し
た薄膜形成用材を用いて導電性基板上に形成した
薄膜感光層を純セレンその他の感光層の上または
下に一層または複数層設けた電子写真感光体。
[Claims] 1 Selenium with 10 to 10,000 ppm arsenic and 1 to
A photosensitive material for electrophotography characterized by the addition of 1000 ppm oxygen. 2 Selenium with 10~10000ppm arsenic and 1~
An electrophotographic photoreceptor comprising a thin film photosensitive layer formed on a conductive substrate using a thin film forming material added with 1000 ppm oxygen. 3 In the laminated electrophotographic photoreceptor, selenium contains 10
An electrophotographic photoreceptor comprising one or more thin film photosensitive layers formed on a conductive substrate using a thin film forming material containing ~10,000 ppm arsenic and 1~1,000 ppm oxygen above or below a pure selenium or other photosensitive layer.
JP27441984A 1984-12-28 1984-12-28 Electrophotographic sensitive body Granted JPS61156134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27441984A JPS61156134A (en) 1984-12-28 1984-12-28 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27441984A JPS61156134A (en) 1984-12-28 1984-12-28 Electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS61156134A JPS61156134A (en) 1986-07-15
JPH0239787B2 true JPH0239787B2 (en) 1990-09-07

Family

ID=17541404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27441984A Granted JPS61156134A (en) 1984-12-28 1984-12-28 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS61156134A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123544A (en) * 1982-01-19 1983-07-22 Ricoh Co Ltd Electrophotographic receptor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123544A (en) * 1982-01-19 1983-07-22 Ricoh Co Ltd Electrophotographic receptor

Also Published As

Publication number Publication date
JPS61156134A (en) 1986-07-15

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