JPS61132956A - Electrophotographic sensitive body - Google Patents

Electrophotographic sensitive body

Info

Publication number
JPS61132956A
JPS61132956A JP25410584A JP25410584A JPS61132956A JP S61132956 A JPS61132956 A JP S61132956A JP 25410584 A JP25410584 A JP 25410584A JP 25410584 A JP25410584 A JP 25410584A JP S61132956 A JPS61132956 A JP S61132956A
Authority
JP
Japan
Prior art keywords
selenium
chlorine
alloy
purity
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25410584A
Other languages
Japanese (ja)
Inventor
Osamu Oda
修 小田
Arata Onozuka
小野塚 新
Akio Koyama
小山 彰夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP25410584A priority Critical patent/JPS61132956A/en
Publication of JPS61132956A publication Critical patent/JPS61132956A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207Selenium-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To reduce the deterioration of the dark attenuation characteristics of an electrophotographic sensitive body and to lower a residual potential by adding Cl to a high-purity Se-Te alloy in a trace amt. of <=10ppm. CONSTITUTION:The Se-Te alloy having the purity of >=99.999% can be reduced in the residual potential by adding Cl by a trace amt. of <=10ppm and the use of a very small amt. of Cl reduces the deterioration of the dark attenuation characteristics. Such addition of Cl to the alloy can be executed by adding a prescribe amt. of Cl in the form of SeCl4 or the like at the time of melting the mixture of Se and Te in a prescribed compsn., or bubbling Cl2. The intended electrophotographic sensitive body is obtained by using the Se-Te alloy thus obtained as an electrophotographic sensitive material, that is, an evaporation source, and depositing it on a conductive substrate.

Description

【発明の詳細な説明】 発明の分野 本発明は、電子写真感光体用上レンーテルル系合金及び
該合金を真空蒸着して作製される電子写真感光体用蒸着
膜に関するものであり、特には高純度セレン−テルル合
金に塩素をI G ppm以下の極微量添加したことを
特徴とする。本発明に従う電子写真感光体は、暗減衰特
性の劣化を小ざくして残留電位の低減化を図ることに成
功したものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a superalloy for electrophotographic photoreceptors and a vapor-deposited film for electrophotographic photoreceptors produced by vacuum-depositing the alloy, and particularly to a high-purity film for electrophotographic photoreceptors. It is characterized in that a very small amount of chlorine, less than I G ppm, is added to the selenium-tellurium alloy. The electrophotographic photoreceptor according to the present invention has succeeded in reducing the residual potential by minimizing the deterioration of the dark decay characteristic.

電子写真法は物質の光導電性と静電気現象を利用した写
真法であり、幾つかの方式が確立されているが、そのう
ちセレン或はセレン合金蒸着膜を電子写真感光体として
使用し、転写によって電子写真を得る方式をゼロックス
法と呼んでいる。ゼロックス法は、周知の通り、下記の
過程から成っている: (a)帯1!:金属基板上に暗抵抗の高い無定形上レン
或いはセレン合金を蒸着した感光体の表面を帯電させる
Electrophotography is a photographic method that utilizes the photoconductivity of substances and electrostatic phenomena, and several methods have been established. The method of obtaining electrophotographs is called the Xerox method. As is well known, the Xerox method consists of the following steps: (a) Band 1! : Charge the surface of a photoreceptor in which an amorphous polyurethane or selenium alloy with high dark resistance is deposited on a metal substrate.

(b)露光(焼付):光像で露光すると光の照射を受け
た部分のセレン或いはセレン合金は電気抵抗が下がり、
表面の帯電電荷は金属基板へ逃げ、感光板上の残存電荷
密度は露光量に応じて差を生じ、感光板面上に原画と同
形のt#電潜像ができる。
(b) Exposure (printing): When exposed to a light image, the electrical resistance of the selenium or selenium alloy in the irradiated area decreases,
Charges on the surface escape to the metal substrate, and the residual charge density on the photosensitive plate varies depending on the amount of exposure, resulting in a t# latent image having the same shape as the original image on the photosensitive plate surface.

tc+  現像:上記感光板表面に炭素微粉を樹脂で被
覆したトナーとガラス小球からなるキャリヤの混合粉を
ふりかけることによって潜像部にトナーが付着し、潜像
は可視像となる。
tc+ Development: By sprinkling the surface of the photosensitive plate with a mixed powder of a toner made of fine carbon powder coated with a resin and a carrier made of glass beads, the toner adheres to the latent image area, and the latent image becomes a visible image.

(d3  転写:現像を終えた上記感光板表面に適当な
紙を戦せ、胃面からコロナ放電を行なわせると、感光板
上のトナーは紙に吸引され、トナー粉像は紙に転写され
る。
(d3 Transfer: Place a suitable piece of paper on the surface of the photosensitive plate after development and cause corona discharge to occur from the stomach surface. The toner on the photosensitive plate will be attracted to the paper, and the toner powder image will be transferred to the paper. .

(@)  定着:転写を終えたら紙をはがし、赤外線ヒ
ータで加熱してトナーの膚脂を紙に溶着させる。
(@) Fixing: Once the transfer is complete, remove the paper and heat it with an infrared heater to fuse the toner skin oil to the paper.

以上の過程を実施することにより原画の複写画像(電子
写真)が得られるが、複写された像の鮮明さ、再現性等
の特性は感光体セレン或いはセレン合金の性能に大きく
依存する。幾つかのセレン合金が考慮されているが、長
波長感度を持たせること及び硬度を上げて耐刷枚数を増
加させること等の目的のためセレン−テルル合金が広く
用いられている。
By carrying out the above process, a copied image (electrophotography) of the original image can be obtained, but the characteristics such as sharpness and reproducibility of the copied image largely depend on the performance of the photoreceptor selenium or selenium alloy. Although several selenium alloys have been considered, selenium-tellurium alloys are widely used for the purpose of providing long-wavelength sensitivity and increasing the number of printing sheets by increasing hardness.

感光体の性能の判定には、(イ)一定出力のコロナ放電
により与えられる帯電電荷量を表すコロナ帯電特性、f
口)コロナ放電により帯電された感光体を保持する間に
失われる荷14債と関係する暗減衰特性、(/→暗中で
保持された荷電量が露光によって消失する連関を表す帯
電圧露光減衰特性、に)感光体を露光させた復電まで消
失せずに残る電位を表す残留電位等が考慮される。
In order to judge the performance of the photoreceptor, (a) the corona charging characteristic, f
(Exposure) Dark attenuation characteristic related to the charge lost while holding the photoreceptor charged by corona discharge, (/→ Charge voltage exposure attenuation characteristic that represents the relationship in which the amount of charge held in the dark disappears due to exposure to light. , 2) Residual potential, which represents the potential that remains without disappearing until the electricity is restored after exposing the photoreceptor, is taken into consideration.

電子写真のコントラストや画質並びにセレン感光体の特
性の安定化にとってji要な役割を果すのは特に残留電
位である。ところが、前記セレン−テルル合金感光体は
残留電位が大きいという重大な欠点を有し、この為、塩
素の添加が行われている(例えば特開昭55−1594
45号)。これまで報告された実際の実験例や試験例に
おいて、は、30〜500 ppmという多量の塩素が
添加されており、このように多量の塩素を添加すると残
留電位を低減できても、今度は前記(ロ)の暗減衰特性
が劣化するという問題点が生じる。
Residual potential in particular plays an important role in stabilizing the contrast and image quality of electrophotography and the characteristics of selenium photoreceptors. However, the selenium-tellurium alloy photoreceptor has a serious drawback of having a large residual potential, and for this reason, chlorine is added (for example, in Japanese Patent Application Laid-Open No. 55-1594).
No. 45). In the actual experiments and test examples reported so far, a large amount of chlorine of 30 to 500 ppm has been added, and even if the residual potential can be reduced by adding such a large amount of chlorine, A problem arises in (b) that the dark decay characteristic deteriorates.

このように、従来からセレン−テルル合金に塩素を添加
して残留電位を低下させることは行われていたが、塩素
添加量をかなり多くしなければ残留電位の低減が達成し
えず、そうした多量の塩素添加は新たに暗減衰特性の劣
化という間急を派生的に生じ、総合的に優れたセレン−
テルル合金系電子写真感光体は未だ得られていない。
In this way, chlorine has been conventionally added to selenium-tellurium alloys to reduce the residual potential, but the residual potential cannot be reduced unless the amount of chlorine added is considerably large. The addition of chlorine causes a sudden deterioration of dark decay characteristics, resulting in an overall superior selenium
A tellurium alloy-based electrophotographic photoreceptor has not yet been obtained.

発明の目的 本発明は、セレン−テルル合金系電子写真感光体におい
て暗減衰特性の劣化を小さくして残留電位を低減させる
ことを目的とする。
OBJECTS OF THE INVENTION An object of the present invention is to reduce the deterioration of dark decay characteristics and reduce the residual potential in a selenium-tellurium alloy electrophotographic photoreceptor.

発明の概要 本発明者等は、従来セレン−テルル合金を調製するのに
使用されたセレンはその純度が4〜5Nのものであり、
龍方テyルもまたせいぜい純度4Nであり、不純物を多
く含有しているとの事実に注目した。推論ではあるが、
このような純度の原料を用いると、それらの不純物が電
子及び正孔のトラップとして作用して残留電位が大きく
なり、このためこれらトラップを補償するのに必要な塩
素量が増大するものと考えられる。従って、従来より高
純度のセレン及びテルルを原料として合金を調製すると
トラップとして作用する不純物が少なくなるので、トラ
ップを補償するに要する塩素量を減少できるのではない
かと考え、検討を重ねた。
Summary of the Invention The present inventors have discovered that the selenium conventionally used to prepare selenium-tellurium alloys has a purity of 4 to 5N;
It was noted that Ryuho Tail also has a purity of 4N at best and contains many impurities. Although it is speculation,
It is thought that when raw materials of such purity are used, these impurities act as traps for electrons and holes, increasing the residual potential, and therefore increasing the amount of chlorine required to compensate for these traps. . Therefore, we thought that if we prepare an alloy using selenium and tellurium of higher purity than conventional raw materials, there would be fewer impurities that act as traps, so we could reduce the amount of chlorine required to compensate for the traps, and we conducted repeated studies.

その結果、99.999%を越える純度を有するセレン
−テルル合金においては10 ppm以下という極微量
の塩素の添加により残留電位を低下させることができる
ことを見出した。塩素添加量が少ないため、暗減衰特性
の劣化は小さい。I Q ppm以下という極微量範囲
での塩素添加について実際に実験が為されたことは本発
明以前にはなく、こうした極微量の塩素の挙動は全く未
知の領域であり、10 ppm以下の極微量への低減が
可能であったことは全く予想外のことであった。
As a result, it has been found that in a selenium-tellurium alloy having a purity exceeding 99.999%, the residual potential can be lowered by adding a trace amount of chlorine of 10 ppm or less. Since the amount of chlorine added is small, the deterioration of dark decay characteristics is small. Prior to the present invention, no experiments had actually been conducted on the addition of chlorine in extremely small amounts of IQ ppm or less, and the behavior of such extremely small amounts of chlorine was completely unknown. It was completely unexpected that it was possible to reduce the

斯くして、本発明は、 1)99.999%を越える純度を有するセレンーテル
ル合金に塩素を10 ppm以下添加したことを特徴と
する電子写真用感光材料、 2)99.999%を越える純度を有するセレン−テル
ル合金に塩素を10 ppm以下添加した薄膜形成用材
を用いて導電性基板上に形成した薄膜感光層を具備する
電子写真感光体及び 5)積層型電子写真感光体において99.999 ′%
を魂える純度を育するセレン−テルル合金に塩素を10
 ppm以下添加した薄膜形成用材を用いて導電性基板
上に形成した薄膜感光層を一層または複数層設けた電子
写真感光体。
Thus, the present invention provides: 1) an electrophotographic photosensitive material characterized in that 10 ppm or less of chlorine is added to a selenium-tellurium alloy having a purity of over 99.999%; 2) a photosensitive material for electrophotography having a purity of over 99.999%. 99.999' %
Adding 10% chlorine to the selenium-tellurium alloy that fosters purity that makes you feel
An electrophotographic photoreceptor comprising one or more thin film photosensitive layers formed on a conductive substrate using a thin film forming material added in an amount of ppm or less.

を撮供する。Provide photography.

発明の詳細な説明 本発明においては、99.999%を越える純度の高純
度セレン−テルル合金が使用される。現在では、純度6
Nの高純度セレン及び純度6Nの高純度テルルを製造す
る技術が確立されており、これらを用いて上記のような
高純度セレン−テルル合金が容易に人手できる。テルル
量は一般に5〜3−0重量%とされ、5%より少ないと
長波長感度及び耐刷枚数の増加という所期の目的を実現
できず、他方30%を越えるとセレン感光特性が許容以
上に悪化する。
DETAILED DESCRIPTION OF THE INVENTION In the present invention, a high purity selenium-tellurium alloy with a purity greater than 99.999% is used. At present, purity 6
Techniques for producing high-purity selenium with a purity of 6N and high-purity tellurium with a purity of 6N have been established, and using these techniques, the above-mentioned high-purity selenium-tellurium alloy can be easily produced manually. The amount of tellurium is generally set at 5 to 3-0% by weight; if it is less than 5%, the desired objectives of increasing long-wavelength sensitivity and printing durability cannot be achieved, while if it exceeds 30%, the selenium sensitivity characteristics may exceed the allowable level. worsens.

該合金への塩素の添加は、セレンと所定割合のテルルと
の混合溶製時に西塩化セレン等の形でセレンを指定量添
加することにより或いはバブリングにより塩素を注入す
ることによりもたらしうる0或いは、微量添加を容易な
らしめる為に、例えば1000 ppmといった一定量
の高水準塩素含有高純度セレンを用意し、セレンーテl
’WIV合金溶製時に目標塩素量が得られるよう適切量
添加してもよし1゜ こうして得られる電子写真用感光材料すなわち蒸着源と
してのセレン−テルル合金を真空蒸着法により基板上に
蒸着することによって電子写真用感光体が得られる。真
空蒸着の条件は特に限定されるものでなく、通常実施さ
れている条件で十分である。蒸着源温度は250〜35
0°C1基板、温度は55〜75℃、真空度は10−a
〜I Q−” Torrs蒸着時間は60〜150分の
範囲で適宜好適な条件を選択して実施しつる。蒸着膜を
支持する基板としては、アルミニウム、鋼等の金属或い
は金属化された祇或いはブチスナック等の材料が用いら
れる。
The addition of chlorine to the alloy can be brought about by adding a specified amount of selenium in the form of selenium chloride or the like during mixing and melting of selenium and tellurium in a predetermined proportion, or by injecting chlorine by bubbling. In order to facilitate the addition of trace amounts, a certain amount of high purity selenium containing a high level of chlorine, such as 1000 ppm, is prepared and selenium chloride is added.
An appropriate amount may be added to obtain the target amount of chlorine when melting the WIV alloy.1゜The electrophotographic photosensitive material thus obtained, that is, the selenium-tellurium alloy as a deposition source, is deposited on the substrate by vacuum deposition. An electrophotographic photoreceptor is obtained. The conditions for vacuum deposition are not particularly limited, and commonly used conditions are sufficient. Evaporation source temperature is 250-35
0°C1 substrate, temperature is 55-75°C, vacuum degree is 10-a
〜IQ−'' Torrs vapor deposition time is 60 to 150 minutes, and suitable conditions are appropriately selected and carried out.The substrate supporting the vapor deposited film may be a metal such as aluminum or steel, or a metallized glass or metal. Materials such as spotted snacks are used.

蒸着膜は、セレンとチルyとを別々の蒸発源に入れ、同
時蒸着することによっても形成できる。
The vapor deposited film can also be formed by placing selenium and chill y into separate evaporation sources and performing simultaneous vapor deposition.

その場合、塩素は例えばセレンに所定量含有せしめられ
る。
In that case, a predetermined amount of chlorine is contained in selenium, for example.

本発明における好ましい塩素添加量は2〜5 pprn
である。
The preferred amount of chlorine added in the present invention is 2 to 5 pprn.
It is.

複写機用感光体においては、機能分離型と呼ばれる複層
構造を採用した感光体も提唱されている。
Regarding photoconductors for copying machines, a photoconductor employing a multilayer structure called a functionally separated type has also been proposed.

例えば、2層構造の場合、光照射を直接受け、紙面と接
触する表面層には、長波長感度や耐摩耗性に優れた5e
−Te系材料を用いそして基板側層には純セレンを用い
る。本発明はこうした積層型電子写真感光体の一層また
は複数層の感光層として適用しうるものである。
For example, in the case of a two-layer structure, the surface layer that receives direct light irradiation and contacts the paper surface is made of 5e, which has excellent long-wavelength sensitivity and abrasion resistance.
-Te-based material is used, and pure selenium is used for the substrate side layer. The present invention can be applied as one or more photosensitive layers of such a laminated electrophotographic photoreceptor.

実施例 高純度セレン(純度6N)と高純度テルル(純度6N)
および塩素を1000 ppm添加したセレンをバイレ
ックスアンプル中に真空封入し、これを550℃で2時
間揺動炉内で反応させた後、炉外に取り出し空冷した。
Example High purity selenium (purity 6N) and high purity tellurium (purity 6N)
Selenium and selenium to which 1000 ppm of chlorine had been added were vacuum sealed in a Vilex ampoule, which was reacted in a rocking furnace at 550° C. for 2 hours, and then taken out of the furnace and cooled in the air.

その後アンプルを粉砕して合金を取り出した。なおテル
ル濃度は12ft%、塩素添加量は2.5.7.10,
20ppmになるよう合金を作製した。
The ampoule was then crushed to remove the alloy. The tellurium concentration is 12 ft%, the amount of chlorine added is 2.5.7.10,
An alloy was prepared so as to have a concentration of 20 ppm.

このようにして作製した合金を抵抗加熱によりssmx
ss−の鏡面仕上げアルミニウム基板上に真空蒸着した
。蒸着条件は次の通りである。
The alloy produced in this way is ssmx by resistance heating.
Vacuum deposition was carried out on an ss- mirror finished aluminum substrate. The deposition conditions are as follows.

蒸発源温度   500°C 基板温度    70”C 真空度     2 X 10−’ Torr蒸着時間
    90分間 以上の条件によりアルミニウム基板上へ形成した蒸着膜
の厚さは、いずれも約50μmであった。
Evaporation source temperature: 500°C Substrate temperature: 70''C Vacuum degree: 2 x 10-' Torr Vapor deposition time: The thickness of the deposited film formed on the aluminum substrate for 90 minutes or more was approximately 50 μm.

こうして得られた合金蒸着膜について静電試験装置を用
いて電子写真特性を測定した。測定*件は次の通りであ
る。
The electrophotographic properties of the alloy vapor-deposited film thus obtained were measured using an electrostatic testing device. The *measurements are as follows.

コロナ放電電圧 5KV 暗減衰時間   10秒間 光照射時間   30秒間 光照度     10ルクス 除電照度、時間 20000 Lx、2秒間繰返し数 
   30回 以上の測定結果と合金中への塩素添加量との関係を図面
に示す。
Corona discharge voltage 5KV Dark decay time 10 seconds Light irradiation time 30 seconds Light illuminance 10 lux Static elimination illuminance, time 20000 Lx, number of repetitions for 2 seconds
The drawing shows the relationship between the results of 30 or more measurements and the amount of chlorine added to the alloy.

第1図において、曲線■は初期表面電位(vo )を示
し、そして曲線■は帯電後10秒経過時の暗状態での表
面電位(vl。)を示す。グラフかられかるように、塩
素添加量が10 ppmを越えると、初期表面電位(v
o)が許容以下に低下しまた(V + o)も著しく低
下して、暗減衰特性を劣化する。
In FIG. 1, the curve ▪ indicates the initial surface potential (vo), and the curve ▪ indicates the surface potential in the dark state (vl.) 10 seconds after charging. As can be seen from the graph, when the amount of chlorine added exceeds 10 ppm, the initial surface potential (v
o) decreases below the allowable level, and (V + o) also decreases significantly, deteriorating the dark decay characteristics.

第2図は残留電位(V r )を示す。残留電位は2 
ppm以上の塩素の添加により充分に低減していること
がわかる。
FIG. 2 shows the residual potential (V r ). The residual potential is 2
It can be seen that the addition of ppm or more of chlorine results in a sufficient reduction.

発明の効果 従来So−SOOppmの塩素の添加を必要としていた
セレン−テルル合金の残留電位特性の改善が、本発明に
より10 ppm以下でもたらされ、塩素添加に伴う暗
減衰特性の劣化が少くてすむ。
Effects of the Invention The present invention improves the residual potential characteristics of selenium-tellurium alloys, which conventionally required the addition of So-SOO ppm of chlorine, with less than 10 ppm, and the deterioration of dark decay characteristics due to the addition of chlorine can be reduced. .

第1図は塩素添皿量と初期表面電位(vo )及び帯電
後10秒経過時の表面電位(vl6)との関係を示すグ
ラフであり、第2図は塩素添加量と残留電位(V r 
)との関係を示すグラフである0区 派 ε 走 (A) 01△′OA″41亀叩¥ 区 へ 派
Figure 1 is a graph showing the relationship between the amount of chlorine added and the initial surface potential (vo) and the surface potential 10 seconds after charging (vl6), and Figure 2 is a graph showing the relationship between the amount of chlorine added and the residual potential (V r
) is a graph showing the relationship between

Claims (1)

【特許請求の範囲】 1)99.999%を越える純度を有するセレン−テル
ル合金に塩素を10ppm以下添加したことを特徴とす
る電子写真用感光材料。 2)99.999%を越える純度を有するセレン−テル
ル合金に塩素を10ppm以下添加した薄膜形成用材を
用いて導電性基板上に形成した薄膜感光層を具備する電
子写真感光体。 3)積層型電子写真感光体において99.999%を越
える純度を有するセレン−テルル合金に塩素を10pp
m以下添加した薄膜形成用材を用いて導電性基板上に形
成した薄膜感光層を一層または複数層設けた電子写真感
光体。
[Scope of Claims] 1) A photosensitive material for electrophotography, characterized in that 10 ppm or less of chlorine is added to a selenium-tellurium alloy having a purity exceeding 99.999%. 2) An electrophotographic photoreceptor comprising a thin film photosensitive layer formed on a conductive substrate using a thin film forming material in which 10 ppm or less of chlorine is added to a selenium-tellurium alloy having a purity exceeding 99.999%. 3) Adding 10pp of chlorine to a selenium-tellurium alloy with a purity of over 99.999% in a laminated electrophotographic photoreceptor
An electrophotographic photoreceptor comprising one or more thin film photosensitive layers formed on a conductive substrate using a thin film forming material added with an amount of m or less.
JP25410584A 1984-12-03 1984-12-03 Electrophotographic sensitive body Pending JPS61132956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25410584A JPS61132956A (en) 1984-12-03 1984-12-03 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25410584A JPS61132956A (en) 1984-12-03 1984-12-03 Electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPS61132956A true JPS61132956A (en) 1986-06-20

Family

ID=17260289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25410584A Pending JPS61132956A (en) 1984-12-03 1984-12-03 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS61132956A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470045A (en) * 1977-11-15 1979-06-05 Stanley Electric Co Ltd Electrostatic photographic photosensitive member

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470045A (en) * 1977-11-15 1979-06-05 Stanley Electric Co Ltd Electrostatic photographic photosensitive member

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