JPS5940548A - 半導体集積回路におけるプログラミング方法 - Google Patents

半導体集積回路におけるプログラミング方法

Info

Publication number
JPS5940548A
JPS5940548A JP57149309A JP14930982A JPS5940548A JP S5940548 A JPS5940548 A JP S5940548A JP 57149309 A JP57149309 A JP 57149309A JP 14930982 A JP14930982 A JP 14930982A JP S5940548 A JPS5940548 A JP S5940548A
Authority
JP
Japan
Prior art keywords
laser
reflectance
laser processing
irradiated
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57149309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0516182B2 (enrdf_load_stackoverflow
Inventor
Mikio Hongo
幹雄 本郷
Takeoki Miyauchi
宮内　建興
Takao Kawanabe
川那部　隆夫
Morio Inoue
井上　盛生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57149309A priority Critical patent/JPS5940548A/ja
Publication of JPS5940548A publication Critical patent/JPS5940548A/ja
Publication of JPH0516182B2 publication Critical patent/JPH0516182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57149309A 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法 Granted JPS5940548A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57149309A JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57149309A JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Publications (2)

Publication Number Publication Date
JPS5940548A true JPS5940548A (ja) 1984-03-06
JPH0516182B2 JPH0516182B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=15472307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57149309A Granted JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Country Status (1)

Country Link
JP (1) JPS5940548A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010528861A (ja) * 2007-05-25 2010-08-26 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 光反射性多層ターゲット構造のレーザ加工
JP2011519175A (ja) * 2008-04-30 2011-06-30 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 半導体ウェハのダイシング
JP2020513323A (ja) * 2016-11-23 2020-05-14 アペラム 動作中の金属製品のレーザースケール除去方法、及びそれを実施するための装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627352A (en) * 1979-08-11 1981-03-17 Ricoh Co Ltd Ink jet head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627352A (en) * 1979-08-11 1981-03-17 Ricoh Co Ltd Ink jet head

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010528861A (ja) * 2007-05-25 2010-08-26 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 光反射性多層ターゲット構造のレーザ加工
JP2011519175A (ja) * 2008-04-30 2011-06-30 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 半導体ウェハのダイシング
JP2020513323A (ja) * 2016-11-23 2020-05-14 アペラム 動作中の金属製品のレーザースケール除去方法、及びそれを実施するための装置
US20210114072A1 (en) * 2016-11-23 2021-04-22 Aperam Method for laser stripping a moving metal product and plant for the execution thereof
US11548046B2 (en) 2016-11-23 2023-01-10 Aperam Method for laser stripping a moving metal product and plant for the execution thereof

Also Published As

Publication number Publication date
JPH0516182B2 (enrdf_load_stackoverflow) 1993-03-03

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