JPH0516182B2 - - Google Patents

Info

Publication number
JPH0516182B2
JPH0516182B2 JP57149309A JP14930982A JPH0516182B2 JP H0516182 B2 JPH0516182 B2 JP H0516182B2 JP 57149309 A JP57149309 A JP 57149309A JP 14930982 A JP14930982 A JP 14930982A JP H0516182 B2 JPH0516182 B2 JP H0516182B2
Authority
JP
Japan
Prior art keywords
reflectance
reflected light
amount
laser
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57149309A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5940548A (ja
Inventor
Mikio Hongo
Takeoki Myauchi
Takao Kawanabe
Morio Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57149309A priority Critical patent/JPS5940548A/ja
Publication of JPS5940548A publication Critical patent/JPS5940548A/ja
Publication of JPH0516182B2 publication Critical patent/JPH0516182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP57149309A 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法 Granted JPS5940548A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57149309A JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57149309A JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Publications (2)

Publication Number Publication Date
JPS5940548A JPS5940548A (ja) 1984-03-06
JPH0516182B2 true JPH0516182B2 (enrdf_load_stackoverflow) 1993-03-03

Family

ID=15472307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57149309A Granted JPS5940548A (ja) 1982-08-30 1982-08-30 半導体集積回路におけるプログラミング方法

Country Status (1)

Country Link
JP (1) JPS5940548A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7741131B2 (en) * 2007-05-25 2010-06-22 Electro Scientific Industries, Inc. Laser processing of light reflective multilayer target structure
GB2459669A (en) * 2008-04-30 2009-11-04 Xsil Technology Ltd Dielectric layer pulsed laser scribing and metal layer and semiconductor wafer dicing
WO2018096382A1 (fr) * 2016-11-23 2018-05-31 Aperam Procédé de décapage laser d'un produit métallique en défilement, et installation pour son exécution

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627352A (en) * 1979-08-11 1981-03-17 Ricoh Co Ltd Ink jet head

Also Published As

Publication number Publication date
JPS5940548A (ja) 1984-03-06

Similar Documents

Publication Publication Date Title
US6593542B2 (en) UV laser system and method for single pulse severing of IC fuses
JP5202026B2 (ja) レーザスクライブ装置
US6987786B2 (en) Controlling laser polarization
US20070227586A1 (en) Detection and ablation of localized shunting defects in photovoltaics
JP2002517902A (ja) 紫外線レーザ出力による導電性リンクの切断方法
EP0716448A1 (fr) Procédé de marquage de circuits intégrés avec un laser, et appareil de marquage s'y rapportant
US5021362A (en) Laser link blowing in integrateed circuit fabrication
JP2010149146A (ja) レーザ加工装置
JP2531453B2 (ja) レ―ザ加工装置
JPH0516182B2 (enrdf_load_stackoverflow)
US20230129245A1 (en) Method and system for laser welding of a semiconductor material
JPS6267834A (ja) レ−ザ処理方法
JP5502726B2 (ja) 光反射性多層ターゲット構造のレーザ加工
JP2916452B1 (ja) 結晶性半導体薄膜の評価方法およびレーザアニール装置
JPH115185A (ja) レーザ加工装置
JPS5940526A (ja) レ−ザ処理方法およびその装置
US4383165A (en) Method for aligning laser beam with fuses in integrated circuit
JP2775005B2 (ja) レーザ切断判定方法
KR100958639B1 (ko) 레이저 조사 장치 및 레이저 조사 방법
JPS59178748A (ja) レ−ザ処理方法
JPS58112327A (ja) レ−ザアニ−ル装置
JPH0687478B2 (ja) 配線層の検査方法
JPH0550272A (ja) 薄膜除去方法及び装置
JPH0318335B2 (enrdf_load_stackoverflow)
JPH11104873A (ja) レーザ加工装置