JPH0516182B2 - - Google Patents
Info
- Publication number
- JPH0516182B2 JPH0516182B2 JP57149309A JP14930982A JPH0516182B2 JP H0516182 B2 JPH0516182 B2 JP H0516182B2 JP 57149309 A JP57149309 A JP 57149309A JP 14930982 A JP14930982 A JP 14930982A JP H0516182 B2 JPH0516182 B2 JP H0516182B2
- Authority
- JP
- Japan
- Prior art keywords
- reflectance
- reflected light
- amount
- laser
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
- H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149309A JPS5940548A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路におけるプログラミング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57149309A JPS5940548A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路におけるプログラミング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5940548A JPS5940548A (ja) | 1984-03-06 |
JPH0516182B2 true JPH0516182B2 (enrdf_load_stackoverflow) | 1993-03-03 |
Family
ID=15472307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57149309A Granted JPS5940548A (ja) | 1982-08-30 | 1982-08-30 | 半導体集積回路におけるプログラミング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5940548A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7741131B2 (en) * | 2007-05-25 | 2010-06-22 | Electro Scientific Industries, Inc. | Laser processing of light reflective multilayer target structure |
GB2459669A (en) * | 2008-04-30 | 2009-11-04 | Xsil Technology Ltd | Dielectric layer pulsed laser scribing and metal layer and semiconductor wafer dicing |
WO2018096382A1 (fr) * | 2016-11-23 | 2018-05-31 | Aperam | Procédé de décapage laser d'un produit métallique en défilement, et installation pour son exécution |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627352A (en) * | 1979-08-11 | 1981-03-17 | Ricoh Co Ltd | Ink jet head |
-
1982
- 1982-08-30 JP JP57149309A patent/JPS5940548A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5940548A (ja) | 1984-03-06 |
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