JPS594010A - 薄膜の結晶粒成長方法 - Google Patents

薄膜の結晶粒成長方法

Info

Publication number
JPS594010A
JPS594010A JP11168282A JP11168282A JPS594010A JP S594010 A JPS594010 A JP S594010A JP 11168282 A JP11168282 A JP 11168282A JP 11168282 A JP11168282 A JP 11168282A JP S594010 A JPS594010 A JP S594010A
Authority
JP
Japan
Prior art keywords
film
layer
sample
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11168282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234129B2 (enrdf_load_stackoverflow
Inventor
Hidekazu Okabayashi
岡林　秀和
Kohei Higuchi
行平 樋口
Shuichi Saito
修一 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11168282A priority Critical patent/JPS594010A/ja
Publication of JPS594010A publication Critical patent/JPS594010A/ja
Publication of JPS6234129B2 publication Critical patent/JPS6234129B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11168282A 1982-06-30 1982-06-30 薄膜の結晶粒成長方法 Granted JPS594010A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11168282A JPS594010A (ja) 1982-06-30 1982-06-30 薄膜の結晶粒成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11168282A JPS594010A (ja) 1982-06-30 1982-06-30 薄膜の結晶粒成長方法

Publications (2)

Publication Number Publication Date
JPS594010A true JPS594010A (ja) 1984-01-10
JPS6234129B2 JPS6234129B2 (enrdf_load_stackoverflow) 1987-07-24

Family

ID=14567501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11168282A Granted JPS594010A (ja) 1982-06-30 1982-06-30 薄膜の結晶粒成長方法

Country Status (1)

Country Link
JP (1) JPS594010A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62163533U (enrdf_load_stackoverflow) * 1986-04-09 1987-10-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62163533U (enrdf_load_stackoverflow) * 1986-04-09 1987-10-17

Also Published As

Publication number Publication date
JPS6234129B2 (enrdf_load_stackoverflow) 1987-07-24

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