JPS593933A - 半導体ウエハ−を光照射で加熱する方法 - Google Patents

半導体ウエハ−を光照射で加熱する方法

Info

Publication number
JPS593933A
JPS593933A JP11149782A JP11149782A JPS593933A JP S593933 A JPS593933 A JP S593933A JP 11149782 A JP11149782 A JP 11149782A JP 11149782 A JP11149782 A JP 11149782A JP S593933 A JPS593933 A JP S593933A
Authority
JP
Japan
Prior art keywords
wafer
temperature
outer periphery
light irradiation
auxiliary heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11149782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331093B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Shimizu
洋 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP11149782A priority Critical patent/JPS593933A/ja
Publication of JPS593933A publication Critical patent/JPS593933A/ja
Publication of JPS6331093B2 publication Critical patent/JPS6331093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11149782A 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法 Granted JPS593933A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11149782A JPS593933A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11149782A JPS593933A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS593933A true JPS593933A (ja) 1984-01-10
JPS6331093B2 JPS6331093B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=14562782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11149782A Granted JPS593933A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS593933A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764937A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS58194332A (ja) * 1981-12-04 1983-11-12 Ushio Inc 半導体を光照射で加熱する方法
JPS6331094A (ja) * 1986-07-24 1988-02-09 Nec Ic Microcomput Syst Ltd Ｐｒｏｍイレ−サ−

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764937A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS58194332A (ja) * 1981-12-04 1983-11-12 Ushio Inc 半導体を光照射で加熱する方法
JPS6331094A (ja) * 1986-07-24 1988-02-09 Nec Ic Microcomput Syst Ltd Ｐｒｏｍイレ−サ−

Also Published As

Publication number Publication date
JPS6331093B2 (enrdf_load_stackoverflow) 1988-06-22

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