JPS5935016A - 含水素シリコン層の製造方法 - Google Patents
含水素シリコン層の製造方法Info
- Publication number
- JPS5935016A JPS5935016A JP14210482A JP14210482A JPS5935016A JP S5935016 A JPS5935016 A JP S5935016A JP 14210482 A JP14210482 A JP 14210482A JP 14210482 A JP14210482 A JP 14210482A JP S5935016 A JPS5935016 A JP S5935016A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- silicon
- hydrogen
- silicon layer
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 33
- 239000001257 hydrogen Substances 0.000 title claims abstract description 24
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000002144 chemical decomposition reaction Methods 0.000 claims abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims abstract 2
- 229910000077 silane Inorganic materials 0.000 claims abstract 2
- 239000007787 solid Substances 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14210482A JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14210482A JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935016A true JPS5935016A (ja) | 1984-02-25 |
| JPH0262482B2 JPH0262482B2 (enrdf_load_stackoverflow) | 1990-12-25 |
Family
ID=15307519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14210482A Granted JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935016A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169320A (ja) * | 1986-01-21 | 1987-07-25 | Sharp Corp | 薄膜の形成方法 |
| JPH05109638A (ja) * | 1988-09-30 | 1993-04-30 | Sanyo Electric Co Ltd | 多結晶シリコン膜の形成方法 |
| WO2002021588A1 (fr) * | 2000-09-01 | 2002-03-14 | Japan Science And Technology Corporation | Procede de fabrication d'une pellicule organique par co-evaporation |
| US7550665B2 (en) * | 2003-07-24 | 2009-06-23 | Kaneka Corporation | Stacked photoelectric converter |
| AU2004259486B2 (en) * | 2003-07-24 | 2010-02-18 | Kaneka Corporation | Silicon based thin film solar cell |
-
1982
- 1982-08-18 JP JP14210482A patent/JPS5935016A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169320A (ja) * | 1986-01-21 | 1987-07-25 | Sharp Corp | 薄膜の形成方法 |
| JPH05109638A (ja) * | 1988-09-30 | 1993-04-30 | Sanyo Electric Co Ltd | 多結晶シリコン膜の形成方法 |
| WO2002021588A1 (fr) * | 2000-09-01 | 2002-03-14 | Japan Science And Technology Corporation | Procede de fabrication d'une pellicule organique par co-evaporation |
| US7550665B2 (en) * | 2003-07-24 | 2009-06-23 | Kaneka Corporation | Stacked photoelectric converter |
| AU2004259486B2 (en) * | 2003-07-24 | 2010-02-18 | Kaneka Corporation | Silicon based thin film solar cell |
| US7847186B2 (en) * | 2003-07-24 | 2010-12-07 | Kaneka Corporation | Silicon based thin film solar cell |
| KR101024288B1 (ko) * | 2003-07-24 | 2011-03-29 | 가부시키가이샤 가네카 | 실리콘계 박막 태양전지 |
| EP1650812B2 (en) † | 2003-07-24 | 2019-10-23 | Kaneka Corporation | Method for making a silicon based thin film solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0262482B2 (enrdf_load_stackoverflow) | 1990-12-25 |
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