JPS5931085A - 半導体レ−ザの製造方法 - Google Patents
半導体レ−ザの製造方法Info
- Publication number
- JPS5931085A JPS5931085A JP57141407A JP14140782A JPS5931085A JP S5931085 A JPS5931085 A JP S5931085A JP 57141407 A JP57141407 A JP 57141407A JP 14140782 A JP14140782 A JP 14140782A JP S5931085 A JPS5931085 A JP S5931085A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- silicon
- gold
- chip
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/30—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H10W72/381—
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141407A JPS5931085A (ja) | 1982-08-13 | 1982-08-13 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141407A JPS5931085A (ja) | 1982-08-13 | 1982-08-13 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5931085A true JPS5931085A (ja) | 1984-02-18 |
| JPH0140514B2 JPH0140514B2 (cg-RX-API-DMAC10.html) | 1989-08-29 |
Family
ID=15291283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57141407A Granted JPS5931085A (ja) | 1982-08-13 | 1982-08-13 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5931085A (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6920164B2 (en) * | 2000-03-01 | 2005-07-19 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| JP2013004571A (ja) * | 2011-06-13 | 2013-01-07 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
-
1982
- 1982-08-13 JP JP57141407A patent/JPS5931085A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6920164B2 (en) * | 2000-03-01 | 2005-07-19 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| JP2013004571A (ja) * | 2011-06-13 | 2013-01-07 | Hamamatsu Photonics Kk | 半導体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0140514B2 (cg-RX-API-DMAC10.html) | 1989-08-29 |
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