JPS5929467A - 接合型電界効果半導体装置 - Google Patents
接合型電界効果半導体装置Info
- Publication number
- JPS5929467A JPS5929467A JP57140568A JP14056882A JPS5929467A JP S5929467 A JPS5929467 A JP S5929467A JP 57140568 A JP57140568 A JP 57140568A JP 14056882 A JP14056882 A JP 14056882A JP S5929467 A JPS5929467 A JP S5929467A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- region
- gate
- voltage
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140568A JPS5929467A (ja) | 1982-08-12 | 1982-08-12 | 接合型電界効果半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140568A JPS5929467A (ja) | 1982-08-12 | 1982-08-12 | 接合型電界効果半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5929467A true JPS5929467A (ja) | 1984-02-16 |
| JPH0363211B2 JPH0363211B2 (cs) | 1991-09-30 |
Family
ID=15271704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140568A Granted JPS5929467A (ja) | 1982-08-12 | 1982-08-12 | 接合型電界効果半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929467A (cs) |
-
1982
- 1982-08-12 JP JP57140568A patent/JPS5929467A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363211B2 (cs) | 1991-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930000968B1 (ko) | 반도체 집적회로 | |
| EP0058958A2 (en) | Complementary MOSFET logic circuit | |
| US4816705A (en) | Bi-CMOS logic circuit | |
| US4617482A (en) | Complementary type MOS field-effect transistor circuit provided with a gate protection structure of small time constant | |
| US4453090A (en) | MOS Field-effect capacitor | |
| GB2172143A (en) | Semiconductor integrated circuit device | |
| US4275359A (en) | MOS FET Amplifier | |
| US4092548A (en) | Substrate bias modulation to improve mosfet circuit performance | |
| US4948990A (en) | BiCMOS inverter circuit | |
| US4810903A (en) | BICMOS driver circuit including submicron on chip voltage source | |
| JPS6051323A (ja) | Cmos伝送回路 | |
| JP2560018B2 (ja) | Cmos回路 | |
| US4002927A (en) | Complementary FET pulse control circuit | |
| JPS5928723A (ja) | アナログスイツチ回路 | |
| JPS5929467A (ja) | 接合型電界効果半導体装置 | |
| US5670893A (en) | BiCMOS logic circuit with bipolar base clamping | |
| JP2914408B2 (ja) | 高耐圧集積回路 | |
| US6452827B1 (en) | I/O circuit of semiconductor integrated device | |
| JPH0374534B2 (cs) | ||
| JPH0746108A (ja) | Cmosアナログスイッチ | |
| JP2861717B2 (ja) | BiCMOS回路 | |
| US20040145389A1 (en) | High speed current mode NOR logic circuit | |
| KR100244287B1 (ko) | 씨모스펫 | |
| JPS61214815A (ja) | アナログスイツチ | |
| US6559700B2 (en) | Semiconductor integrated circuit |