JPS5927589A - 双安定半導体レ−ザダイオ−ド - Google Patents
双安定半導体レ−ザダイオ−ドInfo
- Publication number
- JPS5927589A JPS5927589A JP13577782A JP13577782A JPS5927589A JP S5927589 A JPS5927589 A JP S5927589A JP 13577782 A JP13577782 A JP 13577782A JP 13577782 A JP13577782 A JP 13577782A JP S5927589 A JPS5927589 A JP S5927589A
- Authority
- JP
- Japan
- Prior art keywords
- type inp
- region
- layer
- current
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000010521 absorption reaction Methods 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 230000005284 excitation Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000010355 oscillation Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 14
- 239000012212 insulator Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 241001156002 Anthonomus pomorum Species 0.000 description 1
- 241001553014 Myrsine salicina Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577782A JPS5927589A (ja) | 1982-08-05 | 1982-08-05 | 双安定半導体レ−ザダイオ−ド |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13577782A JPS5927589A (ja) | 1982-08-05 | 1982-08-05 | 双安定半導体レ−ザダイオ−ド |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5927589A true JPS5927589A (ja) | 1984-02-14 |
JPH0328840B2 JPH0328840B2 (enrdf_load_stackoverflow) | 1991-04-22 |
Family
ID=15159608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13577782A Granted JPS5927589A (ja) | 1982-08-05 | 1982-08-05 | 双安定半導体レ−ザダイオ−ド |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5927589A (enrdf_load_stackoverflow) |
-
1982
- 1982-08-05 JP JP13577782A patent/JPS5927589A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0328840B2 (enrdf_load_stackoverflow) | 1991-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6348888A (ja) | 半導体レ−ザ装置 | |
JPS5927589A (ja) | 双安定半導体レ−ザダイオ−ド | |
JPH073908B2 (ja) | 半導体発光装置の製造方法 | |
KR100330593B1 (ko) | 반도체레이저다이오드 | |
JPS637691A (ja) | 半導体レ−ザ装置 | |
JPS63250886A (ja) | 半導体レ−ザ素子の製造方法 | |
JPS609187A (ja) | 半導体発光装置 | |
JPH0380589A (ja) | 半導体レーザ素子の製造方法 | |
JPS6148277B2 (enrdf_load_stackoverflow) | ||
JP4024319B2 (ja) | 半導体発光装置 | |
JPH01215087A (ja) | 半導体発光素子 | |
JPH0578808B2 (enrdf_load_stackoverflow) | ||
JPS5864084A (ja) | 半導体レ−ザ | |
JPS61164288A (ja) | 半導体レ−ザ | |
JPS63287082A (ja) | 半導体レ−ザ素子 | |
JPS6054489A (ja) | 半導体レ−ザ装置 | |
JPH067640B2 (ja) | 半導体レーザ素子の製造方法 | |
JPH077848B2 (ja) | 端面発光型発光ダイオ−ド | |
JPS61184891A (ja) | 半導体レ−ザ | |
JPS5994485A (ja) | 半導体レ−ザ−装置 | |
JPS6347357B2 (enrdf_load_stackoverflow) | ||
JPS62221185A (ja) | 半導体レ−ザ | |
JPH01140691A (ja) | 半導体レーザ | |
JPH07122813A (ja) | 半導体レーザの製造方法 | |
JPS6262583A (ja) | 半導体レ−ザ素子 |