JPS5924550B2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5924550B2 JPS5924550B2 JP54092147A JP9214779A JPS5924550B2 JP S5924550 B2 JPS5924550 B2 JP S5924550B2 JP 54092147 A JP54092147 A JP 54092147A JP 9214779 A JP9214779 A JP 9214779A JP S5924550 B2 JPS5924550 B2 JP S5924550B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction
- gate electrode
- source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 83
- 230000015556 catabolic process Effects 0.000 claims description 54
- 230000005684 electric field Effects 0.000 claims description 41
- 230000005669 field effect Effects 0.000 claims description 37
- 230000002441 reversible effect Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL000007807835 | 1978-07-24 | ||
NLAANVRAGE7807835,A NL184552C (nl) | 1978-07-24 | 1978-07-24 | Halfgeleiderinrichting voor hoge spanningen. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5518098A JPS5518098A (en) | 1980-02-07 |
JPS5924550B2 true JPS5924550B2 (ja) | 1984-06-09 |
Family
ID=19831291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54092147A Expired JPS5924550B2 (ja) | 1978-07-24 | 1979-07-21 | 半導体装置 |
Country Status (15)
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
GB2070858B (en) * | 1980-03-03 | 1985-02-06 | Raytheon Co | Shallow channel field effect transistor |
US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
GB2133621B (en) * | 1983-01-11 | 1987-02-04 | Emi Ltd | Junction field effect transistor |
NL8304256A (nl) * | 1983-12-09 | 1985-07-01 | Philips Nv | Halfgeleiderinrichting. |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL161621C (nl) * | 1968-10-16 | 1980-02-15 | Philips Nv | Halfgeleiderinrichting met veldeffecttransistor. |
JPS4932028B1 (US20020128544A1-20020912-P00008.png) * | 1969-06-24 | 1974-08-27 | ||
US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
US4037245A (en) * | 1975-11-28 | 1977-07-19 | General Electric Company | Electric field controlled diode with a current controlling surface grid |
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1978
- 1978-07-24 NL NLAANVRAGE7807835,A patent/NL184552C/xx not_active IP Right Cessation
-
1979
- 1979-07-09 DE DE2954286A patent/DE2954286C2/de not_active Expired
- 1979-07-09 DE DE2927662A patent/DE2927662C2/de not_active Expired
- 1979-07-19 CA CA332,190A patent/CA1134055A/en not_active Expired
- 1979-07-19 AU AU49061/79A patent/AU521670B2/en not_active Ceased
- 1979-07-20 GB GB7925316A patent/GB2026240B/en not_active Expired
- 1979-07-20 PL PL1979217279D patent/PL119597B1/pl unknown
- 1979-07-20 PL PL21727979A patent/PL217279A1/xx unknown
- 1979-07-20 ES ES482691A patent/ES482691A1/es not_active Expired
- 1979-07-20 IT IT24514/79A patent/IT1122226B/it active
- 1979-07-20 CH CH6783/79A patent/CH648693A5/de not_active IP Right Cessation
- 1979-07-21 JP JP54092147A patent/JPS5924550B2/ja not_active Expired
- 1979-07-23 SE SE7906289A patent/SE437094B/sv not_active IP Right Cessation
- 1979-07-23 FR FR7918941A patent/FR2434487A1/fr active Granted
- 1979-07-23 BR BR7904692A patent/BR7904692A/pt unknown
- 1979-07-23 BE BE0/196422A patent/BE877850A/fr not_active IP Right Cessation
- 1979-07-24 AT AT0509379A patent/AT382042B/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AT382042B (de) | 1986-12-29 |
GB2026240B (en) | 1982-12-01 |
SE437094B (sv) | 1985-02-04 |
ATA509379A (de) | 1986-05-15 |
PL119597B1 (en) | 1982-01-30 |
AU4906179A (en) | 1980-01-31 |
FR2434487B1 (US20020128544A1-20020912-P00008.png) | 1984-06-29 |
BE877850A (fr) | 1980-01-23 |
JPS5518098A (en) | 1980-02-07 |
DE2927662C2 (de) | 1984-01-12 |
CA1134055A (en) | 1982-10-19 |
IT1122226B (it) | 1986-04-23 |
DE2927662A1 (de) | 1980-02-07 |
DE2954286C2 (de) | 1986-04-17 |
NL184552B (nl) | 1989-03-16 |
CH648693A5 (de) | 1985-03-29 |
FR2434487A1 (fr) | 1980-03-21 |
NL184552C (nl) | 1989-08-16 |
IT7924514A0 (it) | 1979-07-20 |
ES482691A1 (es) | 1980-03-01 |
GB2026240A (en) | 1980-01-30 |
SE7906289L (sv) | 1980-01-25 |
BR7904692A (pt) | 1980-04-15 |
PL217279A1 (US20020128544A1-20020912-P00008.png) | 1980-08-11 |
AU521670B2 (en) | 1982-04-22 |
NL7807835A (nl) | 1980-01-28 |
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