JPS59232439A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59232439A
JPS59232439A JP10715083A JP10715083A JPS59232439A JP S59232439 A JPS59232439 A JP S59232439A JP 10715083 A JP10715083 A JP 10715083A JP 10715083 A JP10715083 A JP 10715083A JP S59232439 A JPS59232439 A JP S59232439A
Authority
JP
Japan
Prior art keywords
film
shaped groove
region
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10715083A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464182B2 (enrdf_load_stackoverflow
Inventor
Yuji Furumura
雄二 古村
Takeshi Nishizawa
西沢　武志
Masayuki Takeda
正行 武田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10715083A priority Critical patent/JPS59232439A/ja
Publication of JPS59232439A publication Critical patent/JPS59232439A/ja
Publication of JPH0464182B2 publication Critical patent/JPH0464182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
JP10715083A 1983-06-15 1983-06-15 半導体装置の製造方法 Granted JPS59232439A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10715083A JPS59232439A (ja) 1983-06-15 1983-06-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10715083A JPS59232439A (ja) 1983-06-15 1983-06-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59232439A true JPS59232439A (ja) 1984-12-27
JPH0464182B2 JPH0464182B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=14451771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10715083A Granted JPS59232439A (ja) 1983-06-15 1983-06-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59232439A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6406982B2 (en) * 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
US7968970B2 (en) 2008-05-14 2011-06-28 Renesas Electronics Corporation Semiconductor device, method for manufacturing semiconductor device, and power amplifier element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6406982B2 (en) * 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
US7063751B2 (en) 2000-06-05 2006-06-20 Denso Corporation Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners
US7968970B2 (en) 2008-05-14 2011-06-28 Renesas Electronics Corporation Semiconductor device, method for manufacturing semiconductor device, and power amplifier element

Also Published As

Publication number Publication date
JPH0464182B2 (enrdf_load_stackoverflow) 1992-10-14

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