JPS59229975A - 半導体撮像装置 - Google Patents

半導体撮像装置

Info

Publication number
JPS59229975A
JPS59229975A JP58104637A JP10463783A JPS59229975A JP S59229975 A JPS59229975 A JP S59229975A JP 58104637 A JP58104637 A JP 58104637A JP 10463783 A JP10463783 A JP 10463783A JP S59229975 A JPS59229975 A JP S59229975A
Authority
JP
Japan
Prior art keywords
region
electrode
gate
semiconductor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58104637A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444469B2 (enrdf_load_stackoverflow
Inventor
Akimasa Tanaka
章雅 田中
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP58104637A priority Critical patent/JPS59229975A/ja
Publication of JPS59229975A publication Critical patent/JPS59229975A/ja
Publication of JPH0444469B2 publication Critical patent/JPH0444469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58104637A 1983-06-10 1983-06-10 半導体撮像装置 Granted JPS59229975A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104637A JPS59229975A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104637A JPS59229975A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Publications (2)

Publication Number Publication Date
JPS59229975A true JPS59229975A (ja) 1984-12-24
JPH0444469B2 JPH0444469B2 (enrdf_load_stackoverflow) 1992-07-21

Family

ID=14385959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104637A Granted JPS59229975A (ja) 1983-06-10 1983-06-10 半導体撮像装置

Country Status (1)

Country Link
JP (1) JPS59229975A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0444469B2 (enrdf_load_stackoverflow) 1992-07-21

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