JPS59227130A - 電子ビ−ムアニ−ル装置 - Google Patents
電子ビ−ムアニ−ル装置Info
- Publication number
- JPS59227130A JPS59227130A JP58100823A JP10082383A JPS59227130A JP S59227130 A JPS59227130 A JP S59227130A JP 58100823 A JP58100823 A JP 58100823A JP 10082383 A JP10082383 A JP 10082383A JP S59227130 A JPS59227130 A JP S59227130A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- light
- annealing
- wavelength component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 30
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 241000860832 Yoda Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100823A JPS59227130A (ja) | 1983-06-08 | 1983-06-08 | 電子ビ−ムアニ−ル装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100823A JPS59227130A (ja) | 1983-06-08 | 1983-06-08 | 電子ビ−ムアニ−ル装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227130A true JPS59227130A (ja) | 1984-12-20 |
| JPH0456454B2 JPH0456454B2 (enrdf_load_html_response) | 1992-09-08 |
Family
ID=14284048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58100823A Granted JPS59227130A (ja) | 1983-06-08 | 1983-06-08 | 電子ビ−ムアニ−ル装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227130A (enrdf_load_html_response) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584257A (ja) * | 1981-06-30 | 1983-01-11 | Toshiba Corp | 走査型電子ビ−ムアニ−ル装置 |
-
1983
- 1983-06-08 JP JP58100823A patent/JPS59227130A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS584257A (ja) * | 1981-06-30 | 1983-01-11 | Toshiba Corp | 走査型電子ビ−ムアニ−ル装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456454B2 (enrdf_load_html_response) | 1992-09-08 |
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