JPS59225517A - 非晶室半導体の製造方法 - Google Patents

非晶室半導体の製造方法

Info

Publication number
JPS59225517A
JPS59225517A JP58100619A JP10061983A JPS59225517A JP S59225517 A JPS59225517 A JP S59225517A JP 58100619 A JP58100619 A JP 58100619A JP 10061983 A JP10061983 A JP 10061983A JP S59225517 A JPS59225517 A JP S59225517A
Authority
JP
Japan
Prior art keywords
gas
decomposition
plasma
frequency power
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58100619A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546093B2 (https=
Inventor
Kenji Maekawa
前川　謙二
Yukihisa Takeuchi
幸久 竹内
Masaaki Mori
正昭 森
Toshiaki Nishizawa
西沢　俊明
Yasuhide Okamoto
岡本　康英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP58100619A priority Critical patent/JPS59225517A/ja
Publication of JPS59225517A publication Critical patent/JPS59225517A/ja
Publication of JPH0546093B2 publication Critical patent/JPH0546093B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Photovoltaic Devices (AREA)
JP58100619A 1983-06-06 1983-06-06 非晶室半導体の製造方法 Granted JPS59225517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58100619A JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58100619A JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS59225517A true JPS59225517A (ja) 1984-12-18
JPH0546093B2 JPH0546093B2 (https=) 1993-07-13

Family

ID=14278852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58100619A Granted JPS59225517A (ja) 1983-06-06 1983-06-06 非晶室半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS59225517A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267315A (ja) * 1985-05-22 1986-11-26 Anelva Corp プラズマｃｖｄ装置
JPS6321821A (ja) * 1986-07-15 1988-01-29 Sanyo Electric Co Ltd 半導体製造方法及び製造装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS57167631A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362982A (en) * 1976-11-17 1978-06-05 Toshiba Corp Plasma cvd apparatus
JPS57167631A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267315A (ja) * 1985-05-22 1986-11-26 Anelva Corp プラズマｃｖｄ装置
JPS6321821A (ja) * 1986-07-15 1988-01-29 Sanyo Electric Co Ltd 半導体製造方法及び製造装置

Also Published As

Publication number Publication date
JPH0546093B2 (https=) 1993-07-13

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