JPS59224119A - 被膜作製方法 - Google Patents

被膜作製方法

Info

Publication number
JPS59224119A
JPS59224119A JP59005433A JP543384A JPS59224119A JP S59224119 A JPS59224119 A JP S59224119A JP 59005433 A JP59005433 A JP 59005433A JP 543384 A JP543384 A JP 543384A JP S59224119 A JPS59224119 A JP S59224119A
Authority
JP
Japan
Prior art keywords
silane
gas
cylinder
clusters
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59005433A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6323650B2 (cg-RX-API-DMAC10.html
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59005433A priority Critical patent/JPS59224119A/ja
Publication of JPS59224119A publication Critical patent/JPS59224119A/ja
Publication of JPS6323650B2 publication Critical patent/JPS6323650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP59005433A 1984-01-16 1984-01-16 被膜作製方法 Granted JPS59224119A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59005433A JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59005433A JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55129641A Division JPS6024180B2 (ja) 1980-09-18 1980-09-18 被膜作製方法

Publications (2)

Publication Number Publication Date
JPS59224119A true JPS59224119A (ja) 1984-12-17
JPS6323650B2 JPS6323650B2 (cg-RX-API-DMAC10.html) 1988-05-17

Family

ID=11611058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59005433A Granted JPS59224119A (ja) 1984-01-16 1984-01-16 被膜作製方法

Country Status (1)

Country Link
JP (1) JPS59224119A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892568A (en) * 1988-02-19 1990-01-09 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon
JPH02225674A (ja) * 1988-04-15 1990-09-07 Matsushita Electric Ind Co Ltd 非単結晶薄膜の作製方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295167A (ja) * 1988-05-23 1989-11-28 Jidosha Kiki Co Ltd 車輪速度の異常検出装置
JPH0280964A (ja) * 1988-09-16 1990-03-22 Nippon Denso Co Ltd 車輪速信号処理装置
JPH05133855A (ja) * 1991-02-18 1993-05-28 Osaka Oxygen Ind Ltd ガスサンプリング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892568A (en) * 1988-02-19 1990-01-09 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon
JPH02225674A (ja) * 1988-04-15 1990-09-07 Matsushita Electric Ind Co Ltd 非単結晶薄膜の作製方法

Also Published As

Publication number Publication date
JPS6323650B2 (cg-RX-API-DMAC10.html) 1988-05-17

Similar Documents

Publication Publication Date Title
JPS6237527B2 (cg-RX-API-DMAC10.html)
CN108441963B (zh) 一种碲化铂二维材料、制备及其电学器件中的应用
CN108538707A (zh) 一种二维黑磷晶体制备方法
CN106868469A (zh) 一种在硅基上无金属催化剂制备石墨烯的方法
JPS59224119A (ja) 被膜作製方法
CN103668453A (zh) 一种二维硅烯薄膜及其制备方法
US3853974A (en) Method of producing a hollow body of semiconductor material
JPH0658891B2 (ja) 薄膜単結晶ダイヤモンド基板
JPS5895550A (ja) 非単結晶半導体層形成用装置
JPS6024180B2 (ja) 被膜作製方法
JPS6243536B2 (cg-RX-API-DMAC10.html)
JPS62156813A (ja) 薄膜半導体素子及びその形成法
CN102176410B (zh) 一种一步法合成Si/IIB-VIB族半导体纳米p-n结的方法
JPH0324775B2 (cg-RX-API-DMAC10.html)
JP2573125B2 (ja) 高圧容器に容れられた半導体製造用ガス
JP2626701B2 (ja) Ｍｉｓ型電界効果半導体装置
CN117187954A (zh) 一种等离子增强化学气相沉积生长GaON外延薄膜的制备方法
JPS6318856B2 (cg-RX-API-DMAC10.html)
TWI725797B (zh) 碳化矽長晶設備及其長晶方法
JPH079059B2 (ja) 炭素薄膜の製造方法
CN115418714B (zh) 一种在金属衬底上制备单晶二维材料的通用方法
JPS58175824A (ja) プラズマ気相反応用装置
CN1096548A (zh) 金刚石单晶薄膜的制造方法
JP3112796B2 (ja) 化学気相成長方法
JPS6236632B2 (cg-RX-API-DMAC10.html)