JPS59224115A - 電子ビ−ムアニ−ル方法 - Google Patents

電子ビ−ムアニ−ル方法

Info

Publication number
JPS59224115A
JPS59224115A JP58097961A JP9796183A JPS59224115A JP S59224115 A JPS59224115 A JP S59224115A JP 58097961 A JP58097961 A JP 58097961A JP 9796183 A JP9796183 A JP 9796183A JP S59224115 A JPS59224115 A JP S59224115A
Authority
JP
Japan
Prior art keywords
electron
vacuum
degree
electron beam
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58097961A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427688B2 (https=
Inventor
Shuichi Saito
修一 斉藤
Kohei Higuchi
行平 樋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58097961A priority Critical patent/JPS59224115A/ja
Publication of JPS59224115A publication Critical patent/JPS59224115A/ja
Publication of JPH0427688B2 publication Critical patent/JPH0427688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Recrystallisation Techniques (AREA)
JP58097961A 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法 Granted JPS59224115A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58097961A JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58097961A JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS59224115A true JPS59224115A (ja) 1984-12-17
JPH0427688B2 JPH0427688B2 (https=) 1992-05-12

Family

ID=14206264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58097961A Granted JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS59224115A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003433A1 (en) * 2001-06-28 2003-01-09 Tokyo Electron Limited Chamber sensor port, chamber, and electron beam processor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003433A1 (en) * 2001-06-28 2003-01-09 Tokyo Electron Limited Chamber sensor port, chamber, and electron beam processor
US6987271B1 (en) 2001-06-28 2006-01-17 Tokyo Electron Limited Chamber sensor port, chamber and electron beam processor

Also Published As

Publication number Publication date
JPH0427688B2 (https=) 1992-05-12

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