JPS59214224A - ＳｉＣの電極形成方法 - Google Patents

ＳｉＣの電極形成方法

Info

Publication number
JPS59214224A
JPS59214224A JP58089483A JP8948383A JPS59214224A JP S59214224 A JPS59214224 A JP S59214224A JP 58089483 A JP58089483 A JP 58089483A JP 8948383 A JP8948383 A JP 8948383A JP S59214224 A JPS59214224 A JP S59214224A
Authority
JP
Japan
Prior art keywords
silicon
aluminum
layer
electrode
type sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58089483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518251B2 (enrdf_load_stackoverflow
Inventor
Junichi Sano
純一 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58089483A priority Critical patent/JPS59214224A/ja
Publication of JPS59214224A publication Critical patent/JPS59214224A/ja
Publication of JPH0518251B2 publication Critical patent/JPH0518251B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP58089483A 1983-05-20 1983-05-20 ＳｉＣの電極形成方法 Granted JPS59214224A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58089483A JPS59214224A (ja) 1983-05-20 1983-05-20 ＳｉＣの電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58089483A JPS59214224A (ja) 1983-05-20 1983-05-20 ＳｉＣの電極形成方法

Publications (2)

Publication Number Publication Date
JPS59214224A true JPS59214224A (ja) 1984-12-04
JPH0518251B2 JPH0518251B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=13971981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58089483A Granted JPS59214224A (ja) 1983-05-20 1983-05-20 ＳｉＣの電極形成方法

Country Status (1)

Country Link
JP (1) JPS59214224A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209855A (ja) * 1986-03-10 1987-09-16 Agency Of Ind Science & Technol 炭化けい素を用いた半導体素子
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US5980265A (en) * 1994-06-03 1999-11-09 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silicon carbide, and method of making the same
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111564A (en) * 1974-07-19 1976-01-29 Hitachi Ltd Handotaisochino denkyokuhaisensokeiseihoho
JPS51107781A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino seizohoho
JPS5380814A (en) * 1976-12-25 1978-07-17 Nippon Kokan Kk <Nkk> Preventing device against overflowing of stored liquid in liquefied naturalgas tank

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111564A (en) * 1974-07-19 1976-01-29 Hitachi Ltd Handotaisochino denkyokuhaisensokeiseihoho
JPS51107781A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino seizohoho
JPS5380814A (en) * 1976-12-25 1978-07-17 Nippon Kokan Kk <Nkk> Preventing device against overflowing of stored liquid in liquefied naturalgas tank

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209855A (ja) * 1986-03-10 1987-09-16 Agency Of Ind Science & Technol 炭化けい素を用いた半導体素子
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
US5980265A (en) * 1994-06-03 1999-11-09 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silicon carbide, and method of making the same
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US6201261B1 (en) 1996-11-08 2001-03-13 Midwest Research Institute High efficiency, low cost, thin film silicon solar cell design and method for making
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact

Also Published As

Publication number Publication date
JPH0518251B2 (enrdf_load_stackoverflow) 1993-03-11

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