JPS5921165B2 - 半導体素子 - Google Patents

半導体素子

Info

Publication number
JPS5921165B2
JPS5921165B2 JP51147860A JP14786076A JPS5921165B2 JP S5921165 B2 JPS5921165 B2 JP S5921165B2 JP 51147860 A JP51147860 A JP 51147860A JP 14786076 A JP14786076 A JP 14786076A JP S5921165 B2 JPS5921165 B2 JP S5921165B2
Authority
JP
Japan
Prior art keywords
semiconductor device
silicon
semiconductor
formula
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51147860A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5284974A (en
Inventor
アレクサンダ−・ジヨン・ヤ−マン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5284974A publication Critical patent/JPS5284974A/ja
Publication of JPS5921165B2 publication Critical patent/JPS5921165B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P50/00
    • H10W74/01
    • H10W74/137

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
JP51147860A 1975-12-11 1976-12-10 半導体素子 Expired JPS5921165B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63986975A 1975-12-11 1975-12-11
US000000639869 1975-12-11

Publications (2)

Publication Number Publication Date
JPS5284974A JPS5284974A (en) 1977-07-14
JPS5921165B2 true JPS5921165B2 (ja) 1984-05-18

Family

ID=24565904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51147860A Expired JPS5921165B2 (ja) 1975-12-11 1976-12-10 半導体素子

Country Status (4)

Country Link
JP (1) JPS5921165B2 (Direct)
DE (1) DE2655725A1 (Direct)
FR (1) FR2335044A1 (Direct)
SE (1) SE418433B (Direct)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
GB1585477A (en) * 1976-01-26 1981-03-04 Gen Electric Semiconductors
JPS6040705B2 (ja) * 1978-06-26 1985-09-12 インタ−ナシヨナル・ビジネス・マシ−ンンズ・コ−ポレ−シヨン 電子回路の保護被覆形成方法
IL59344A (en) * 1979-03-01 1983-06-15 M & T Chemicals Inc Precursor solutions of silicone copolymer materials made from a siloxane containing a bis-amino aryl ether or thioether
DE19500235A1 (de) * 1995-01-05 1996-07-11 Roth Technik Gmbh Abdeckschicht für elektrische Leiter oder Halbleiter

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325450A (en) * 1965-05-12 1967-06-13 Gen Electric Polysiloxaneimides and their production
US3615913A (en) * 1968-11-08 1971-10-26 Westinghouse Electric Corp Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3553282A (en) * 1969-09-08 1971-01-05 Gen Electric Siloxane containing polyamide acid blends
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
JPS5421073B2 (Direct) * 1974-04-15 1979-07-27
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
DE2655803C2 (de) * 1975-12-11 1986-04-17 General Electric Co., Schenectady, N.Y. Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes

Also Published As

Publication number Publication date
DE2655725A1 (de) 1977-06-16
SE7613873L (sv) 1977-06-12
JPS5284974A (en) 1977-07-14
FR2335044B1 (Direct) 1982-09-17
FR2335044A1 (fr) 1977-07-08
SE418433B (sv) 1981-05-25

Similar Documents

Publication Publication Date Title
US4017340A (en) Semiconductor element having a polymeric protective coating and glass coating overlay
US4030948A (en) Polyimide containing silicones as protective coating on semiconductor device
US4051163A (en) Polyimide containing silicones
US4795680A (en) Polyimide-siloxanes, method of making and use
EP0010657B1 (en) Selective etching of polymeric materials embodying silicones via reactor plasmas
US6307008B1 (en) Polyimide for high temperature adhesive
US4140572A (en) Process for selective etching of polymeric materials embodying silicones therein
US4198444A (en) Method for providing substantially hermetic sealing means for electronic components
JPS5813087B2 (ja) シロキサン変性ポリイミド前駆体の製造方法
US4652598A (en) Siloxane-containing polymers
US4331970A (en) Use of dispersed solids as fillers in polymeric materials to provide material for semiconductor junction passivation
JPH0377228B2 (Direct)
JPS584816B2 (ja) 半導体素子とその製法
JPS6046542B2 (ja) 半導体素子
JPS5813088B2 (ja) シロキサン変性ポリイミド前駆体の製造法
JPS5921165B2 (ja) 半導体素子
EP0015720B1 (en) Copolymeric coating compositions
JPH0259622B2 (Direct)
GB1571999A (en) Semiconductors
JPH0489827A (ja) ポリアミド酸共重合体及びその製造方法
JPS5835368B2 (ja) 半導体装置及びその表面被覆組成物
US4314047A (en) Particulated polyetherimide and method for making
AU577998B2 (en) Siloxane-containing polymers
JPS6047741B2 (ja) 被覆用共重合体液と被覆半導体素子
US4528216A (en) Process for forming heat-resistant resin films of polyimide and organosilicic reactants