JPS5921165B2 - 半導体素子 - Google Patents
半導体素子Info
- Publication number
- JPS5921165B2 JPS5921165B2 JP51147860A JP14786076A JPS5921165B2 JP S5921165 B2 JPS5921165 B2 JP S5921165B2 JP 51147860 A JP51147860 A JP 51147860A JP 14786076 A JP14786076 A JP 14786076A JP S5921165 B2 JPS5921165 B2 JP S5921165B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- silicon
- semiconductor
- formula
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
-
- H10W74/01—
-
- H10W74/137—
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63986975A | 1975-12-11 | 1975-12-11 | |
| US000000639869 | 1975-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5284974A JPS5284974A (en) | 1977-07-14 |
| JPS5921165B2 true JPS5921165B2 (ja) | 1984-05-18 |
Family
ID=24565904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51147860A Expired JPS5921165B2 (ja) | 1975-12-11 | 1976-12-10 | 半導体素子 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5921165B2 (Direct) |
| DE (1) | DE2655725A1 (Direct) |
| FR (1) | FR2335044A1 (Direct) |
| SE (1) | SE418433B (Direct) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1563421A (en) * | 1975-12-18 | 1980-03-26 | Gen Electric | Polyimide-siloxane copolymer protective coating for semiconductor devices |
| GB1585477A (en) * | 1976-01-26 | 1981-03-04 | Gen Electric | Semiconductors |
| JPS6040705B2 (ja) * | 1978-06-26 | 1985-09-12 | インタ−ナシヨナル・ビジネス・マシ−ンンズ・コ−ポレ−シヨン | 電子回路の保護被覆形成方法 |
| IL59344A (en) * | 1979-03-01 | 1983-06-15 | M & T Chemicals Inc | Precursor solutions of silicone copolymer materials made from a siloxane containing a bis-amino aryl ether or thioether |
| DE19500235A1 (de) * | 1995-01-05 | 1996-07-11 | Roth Technik Gmbh | Abdeckschicht für elektrische Leiter oder Halbleiter |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325450A (en) * | 1965-05-12 | 1967-06-13 | Gen Electric | Polysiloxaneimides and their production |
| US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
| US3553282A (en) * | 1969-09-08 | 1971-01-05 | Gen Electric | Siloxane containing polyamide acid blends |
| US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
| JPS5421073B2 (Direct) * | 1974-04-15 | 1979-07-27 | ||
| GB1553243A (en) * | 1975-08-04 | 1979-09-26 | Gen Electric | Semiconductor |
| DE2655803C2 (de) * | 1975-12-11 | 1986-04-17 | General Electric Co., Schenectady, N.Y. | Verfahren zum Behandeln eines ausgewählten Oberflächenbereiches eines Halbleiterelementes |
-
1976
- 1976-12-09 SE SE7613873A patent/SE418433B/xx not_active IP Right Cessation
- 1976-12-09 DE DE19762655725 patent/DE2655725A1/de not_active Ceased
- 1976-12-10 JP JP51147860A patent/JPS5921165B2/ja not_active Expired
- 1976-12-10 FR FR7637217A patent/FR2335044A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2655725A1 (de) | 1977-06-16 |
| SE7613873L (sv) | 1977-06-12 |
| JPS5284974A (en) | 1977-07-14 |
| FR2335044B1 (Direct) | 1982-09-17 |
| FR2335044A1 (fr) | 1977-07-08 |
| SE418433B (sv) | 1981-05-25 |
Similar Documents
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|---|---|---|
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| US4051163A (en) | Polyimide containing silicones | |
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| US4198444A (en) | Method for providing substantially hermetic sealing means for electronic components | |
| JPS5813087B2 (ja) | シロキサン変性ポリイミド前駆体の製造方法 | |
| US4652598A (en) | Siloxane-containing polymers | |
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| JPH0377228B2 (Direct) | ||
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| JPS5921165B2 (ja) | 半導体素子 | |
| EP0015720B1 (en) | Copolymeric coating compositions | |
| JPH0259622B2 (Direct) | ||
| GB1571999A (en) | Semiconductors | |
| JPH0489827A (ja) | ポリアミド酸共重合体及びその製造方法 | |
| JPS5835368B2 (ja) | 半導体装置及びその表面被覆組成物 | |
| US4314047A (en) | Particulated polyetherimide and method for making | |
| AU577998B2 (en) | Siloxane-containing polymers | |
| JPS6047741B2 (ja) | 被覆用共重合体液と被覆半導体素子 | |
| US4528216A (en) | Process for forming heat-resistant resin films of polyimide and organosilicic reactants |