JPS5921063A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5921063A
JPS5921063A JP57132764A JP13276482A JPS5921063A JP S5921063 A JPS5921063 A JP S5921063A JP 57132764 A JP57132764 A JP 57132764A JP 13276482 A JP13276482 A JP 13276482A JP S5921063 A JPS5921063 A JP S5921063A
Authority
JP
Japan
Prior art keywords
region
junction
main surface
junctions
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57132764A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139223B2 (enrdf_load_stackoverflow
Inventor
Tsutomu Nakagawa
勉 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57132764A priority Critical patent/JPS5921063A/ja
Publication of JPS5921063A publication Critical patent/JPS5921063A/ja
Publication of JPH0139223B2 publication Critical patent/JPH0139223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
JP57132764A 1982-07-27 1982-07-27 半導体装置 Granted JPS5921063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57132764A JPS5921063A (ja) 1982-07-27 1982-07-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57132764A JPS5921063A (ja) 1982-07-27 1982-07-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS5921063A true JPS5921063A (ja) 1984-02-02
JPH0139223B2 JPH0139223B2 (enrdf_load_stackoverflow) 1989-08-18

Family

ID=15089002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57132764A Granted JPS5921063A (ja) 1982-07-27 1982-07-27 半導体装置

Country Status (1)

Country Link
JP (1) JPS5921063A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495248U (enrdf_load_stackoverflow) * 1972-04-12 1974-01-17
JPS4940887A (enrdf_load_stackoverflow) * 1972-08-25 1974-04-17
JPS50117377A (enrdf_load_stackoverflow) * 1974-02-28 1975-09-13
JPS5375430A (en) * 1976-12-17 1978-07-04 Toshiba Corp Inverse conduction gto rectifler

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495248U (enrdf_load_stackoverflow) * 1972-04-12 1974-01-17
JPS4940887A (enrdf_load_stackoverflow) * 1972-08-25 1974-04-17
JPS50117377A (enrdf_load_stackoverflow) * 1974-02-28 1975-09-13
JPS5375430A (en) * 1976-12-17 1978-07-04 Toshiba Corp Inverse conduction gto rectifler

Also Published As

Publication number Publication date
JPH0139223B2 (enrdf_load_stackoverflow) 1989-08-18

Similar Documents

Publication Publication Date Title
JP3111827B2 (ja) 半導体装置及びそれを使った電力変換装置
JPH0671079B2 (ja) 双方向導通可能なモノリシック集積半導体デバイスとその製造方法
US20130168729A1 (en) Voltage-Sustaining Layer Consisting of Semiconductor and Insulator Containing Conductive Particles for Semiconductor Device
CN109904221B (zh) 一种超结双向开关
JPH0139661B2 (enrdf_load_stackoverflow)
KR0127282B1 (ko) 반도체 장치
JPS5921063A (ja) 半導体装置
JP2000208768A (ja) 半導体装置及びそれを使った電力変換装置
JPS60132374A (ja) 絶縁分離した絶縁ゲート型バイポーラ・トランジスタを含む半導体デバイス構造
JPS6257250A (ja) 半導体装置
JPH03147331A (ja) 高耐圧半導体装置
US20050127434A1 (en) MOS power component with a reduced surface area
US3504241A (en) Semiconductor bidirectional switch
JPH11307785A (ja) 電力用半導体装置
JP3163674B2 (ja) 浮遊電流の少ない高電圧半導体素子
JPH0666464B2 (ja) 双方向性半導体スイッチング素子
US3784886A (en) Bidirectional switching semiconductor device
JPS5938056Y2 (ja) 半導体開閉装置
JPH021989A (ja) 高耐圧スイッチングダイオード
JPH0121633B2 (enrdf_load_stackoverflow)
JPH04369272A (ja) 複合化ダイオード
JP2001015770A (ja) 電力用半導体素子
JP3222500B2 (ja) 双方向高耐圧半導体素子
JPS62144357A (ja) スイツチング用半導体装置
JP3395282B2 (ja) 定電圧発生装置