JPS59208873A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59208873A
JPS59208873A JP58082807A JP8280783A JPS59208873A JP S59208873 A JPS59208873 A JP S59208873A JP 58082807 A JP58082807 A JP 58082807A JP 8280783 A JP8280783 A JP 8280783A JP S59208873 A JPS59208873 A JP S59208873A
Authority
JP
Japan
Prior art keywords
regions
region
tunnel barrier
resistance
het
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58082807A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252863B2 (cs
Inventor
Hiroharu Kawai
弘治 河合
Ichiro Hase
伊知郎 長谷
Kunio Kaneko
金子　邦雄
Yoshifumi Mori
森　芳文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58082807A priority Critical patent/JPS59208873A/ja
Publication of JPS59208873A publication Critical patent/JPS59208873A/ja
Publication of JPH0252863B2 publication Critical patent/JPH0252863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58082807A 1983-05-13 1983-05-13 半導体装置 Granted JPS59208873A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58082807A JPS59208873A (ja) 1983-05-13 1983-05-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58082807A JPS59208873A (ja) 1983-05-13 1983-05-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS59208873A true JPS59208873A (ja) 1984-11-27
JPH0252863B2 JPH0252863B2 (cs) 1990-11-14

Family

ID=13784677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58082807A Granted JPS59208873A (ja) 1983-05-13 1983-05-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS59208873A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253267A (ja) * 1984-05-29 1985-12-13 Toshiba Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS61268061A (ja) * 1985-05-23 1986-11-27 Agency Of Ind Science & Technol ホツト・エレクトロン・トランジスタ及びその製造方法
JPS63174363A (ja) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol ホツトエレクトロントランジスタ
US4903104A (en) * 1986-10-29 1990-02-20 Sony Corporation Heterojunctional collector-top type bi-polar transistor
US4922314A (en) * 1986-05-23 1990-05-01 U.S. Philips Corp. Hot charge-carrier transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253267A (ja) * 1984-05-29 1985-12-13 Toshiba Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS61268061A (ja) * 1985-05-23 1986-11-27 Agency Of Ind Science & Technol ホツト・エレクトロン・トランジスタ及びその製造方法
US4922314A (en) * 1986-05-23 1990-05-01 U.S. Philips Corp. Hot charge-carrier transistors
US4903104A (en) * 1986-10-29 1990-02-20 Sony Corporation Heterojunctional collector-top type bi-polar transistor
JPS63174363A (ja) * 1987-01-14 1988-07-18 Agency Of Ind Science & Technol ホツトエレクトロントランジスタ

Also Published As

Publication number Publication date
JPH0252863B2 (cs) 1990-11-14

Similar Documents

Publication Publication Date Title
US3191061A (en) Insulated gate field effect devices and electrical circuits employing such devices
US3643237A (en) Multiple-junction tunnel devices
JPS59208873A (ja) 半導体装置
EP0351320A2 (en) Semiconductor functional element
DE2812785A1 (de) Halbleiter-signaluebertragungsschaltung
EP0137257B1 (en) Resistive gate field effect transistor logic family
US3414740A (en) Integrated insulated gate field effect logic circuitry
US3591840A (en) Controllable space-charge-limited impedance device for integrated circuits
US3204115A (en) Four-terminal solid state superconductive device with control current flowing transverse to controlled output current
JPS6337507B2 (cs)
US3196284A (en) Logical signal processing apparatus
US4048517A (en) Logic element
JPH0529636A (ja) Ｐｉｎダイオード
CA1060587A (en) Electrical circuit logic elements
JPS6212212A (ja) 超電導回路
JPH045274B2 (cs)
JPH0273666A (ja) 半導体メモリ装置
JP2730368B2 (ja) 超電導電界効果型素子およびその作製方法
JPH0131304B2 (cs)
JPS60167375A (ja) 半導体装置
JPH05501479A (ja) 半導体スイッチ
JPS5832505B2 (ja) 半導体集積回路
KR800001109B1 (ko) 매스터-슬레이브(master-slave) 쌍안정 회로 배치를 구비한 전기 회로
JPH0218975A (ja) 超伝導回路
JPS584463B2 (ja) シユウセキカハンドウタイロンリカイロ