JPS59205744A - Semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate the connection of the metal leads with the semiconductor element by thinning one-side ends of the leads as well as the connection with the external circuit by thickening another-side ends of the leads. CONSTITUTION:One end 25 of a metal lead 23 gilt with Sn is connected to an Au projecting electrode 22 on a semiconductor element 21 by Au-Su alloy junction and the lead 23 is stuck and fixed to the element 21 with resin 24. Furthermore, a connection terminal 27 projects from the bottom of the element 21 to contrive facility of connection with a circuit board 31. In this constitution, the semiconductor device 33 can be fitted to the board 31 easily by similar process to be applied to the general passive parts 34 such as a chip resistance and high- density mounting is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a structure of a semiconductor device that is optimal for high-density packaging.

Conventional configurations and their problems In recent years, as devices have become smaller and thinner, there has been a strong demand for high-density packaging technology. For this reason, wireless bonding technology has come to be widely used for connecting semiconductor elements. The flip chip is shown in Figure 1 below.
Figure 2 shows an example of a film carrier (hereinafter referred to as TAB). In Figure 1, 1 is a semiconductor element, 2.2' is a solder bump, 3 is a substrate, 4 is a conductor, and 5.5' is solder. This is the area where the bumps are bonded. In the example shown in FIG. 1, the protruding electrodes are formed with solder on the electrodes of the semiconductor elements, so that extremely high density can be achieved when connecting to the substrate and mounting a large number of semiconductor elements.

However, in the above example, the electrodes are attached only to one side, making it difficult to align them when joining face down.

In addition, as another conventional example, a cross-sectional sketch diagram of TAB is shown in the second
Shown in the figure. In FIG. 2, 6 is a semiconductor element, 7 is an Au protruding electrode formed on the semiconductor element, 8 is a Sn-plated Cu lead, 9 is a polyimide film, and 10.10' is an area for connection with an external circuit. . In this case, the reliability is said to be extremely high because the alloy connection is made between the mu-U electrode 7 formed on the semiconductor element 6 and the Sn plating 8 on the iu lead. An example of mounting on a board is shown in Figure 3. In Figure 3, the second
The same numbers are given to the same parts as in the figure. 11 is a substrate, 12
1 is a conductor wiring, 13 is a connecting portion with an external circuit, and 14 is an adhesive or solder for adhesively fixing the semiconductor element.

In this way, the lead 8 is once formed (referred to as forming) and connected to the conductor wiring 12 in the region 13. If necessary, the semiconductor element 6 is fixed to the substrate 11 using an adhesive 14.

However, in the above example, it is necessary to form the beam 8 in order to mount it on the substrate 11, which makes handling extremely difficult.

In view of these circumstances, the present invention solves the problems of the conventional example by providing one end of the metal lead with a structure that makes it easy to connect to an electrode on a semiconductor element, and the other end with a structure that makes it easy to connect with an external circuit. This is what was created.

OBJECTS OF THE INVENTION In view of the conventional problems, it is an object of the present invention to provide a semiconductor device having a structure and form that allows high-density packaging.

Structure of the Invention The present invention has one end of a metal lead made thin so that it can be easily connected to a protruding electrode on a semiconductor element, and the other end made thick so that it can be easily connected to an external circuit, and by connecting a semiconductor element to such a metal lead. The present invention provides a semiconductor device that can be mounted at high density.

DESCRIPTION OF EMBODIMENTS FIG. 4 shows a cross-sectional structure in a first embodiment of the present invention. In FIG. 3, 21 is a semiconductor element, 22 is a protruding electrode on the semiconductor element, usually by soldering, 23 is a metal lead, 24 is a resin, and 26 is a joint between the metal lead and the electrode on the semiconductor element. The thin portion 26 is a relatively thick portion having a thickness tl of the external circuit connection portion of the metal lead, and the numeral 27 is a connection terminal.

In this embodiment, one end 2 of the metal lead 23 is Sn-plated.
6 is an Au-
Sn alloy bonding is performed, and the cross-domain 23 is bonded and fixed to the semiconductor element 21 with an adhesive resin 24.

Furthermore, the connecting terminals 27 are structured to protrude from the bottom of the semiconductor element 21, thereby facilitating connection to the substrate. FIG. 6 shows an example in which a semiconductor device manufactured with the structure shown in this embodiment is mounted on a substrate. In Figure 6, 31
is a substrate (ceramic or resin substrate); 32 is a conductor wiring on the substrate 31;

33 is a semiconductor device shown in FIG. 4, 34 is a chip component such as a chip resistor, and 36 is solder. In this manner, the semiconductor device 33 according to the present invention can be easily attached to the substrate 31 in the same process as that for general passive components such as chip resistors and chip components 34.

FIG. 6 shows a semiconductor device according to a second embodiment of the present invention. In FIG. 6, 41 is a semiconductor element, 42 is an electrode that connects the semiconductor element and a lead, 43 is a metal lead, 44 is a relatively thick connection part that connects to an external circuit, and 46 is a relatively thin connection that connects to the semiconductor element. 46 is a protective resin. In this structure, the joint portion 44 with the external circuit has a shape protruding from the bottom surface, which facilitates connection with the board. FIG. 7 shows an example in which a semiconductor device manufactured according to the structure of FIG. 6 of the present invention is mounted on a substrate. In FIG. 7, parts common to those in FIG. 5 are given the same numbers, and 36 is a conductor wiring running under the semiconductor device. The semiconductor device 33 is a chip component 3
The connection can be made in the same process using the same method as in No. 4, that is, using solder 35. Furthermore, since the connection ends of the metal leads 43 with external circuits protrude outward from the semiconductor element, alignment is facilitated and conductor wiring can be passed under the semiconductor device.

Effects of the Invention As described above, in the present invention, one end of the metal lead is made thinner to facilitate connection with a semiconductor element, and the other end is made thicker to achieve the structures shown in FIGS. 4 and 6.
Connection with external circuits is extremely easy as shown in FIGS. 6 and 7. Furthermore, a tertiary structure can be easily realized by stacking the structures shown in FIGS. 4 and 6 through appropriate spacers and interconnecting them on their sides.

[Brief explanation of drawings]

1 and 2 are cross-sectional views of a conventional semiconductor device, FIG. 3 is a cross-sectional view of a conventional semiconductor device mounting example, FIG. 4 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of a conventional semiconductor device. 6 is a sectional view of the semiconductor device of the second embodiment of the present invention, and FIG. 7 is a sectional view of the semiconductor device of the second embodiment of the present invention mounted on a substrate. It is a sectional view of the state. 21.41...Semiconductor element, 23.43...
...metal lead, 25.45...junction with element electrode, 26.44...connection with external circuit, 31...substrate, 32... ...conductor wiring,
33...Semiconductor device. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure, 2□ 3 Figure 7

Claims (1)

[Claims] (1) A semiconductor device characterized in that the semiconductor element upper electrode is connected to a group of metal leads which are thin on the side connected to the semiconductor element upper electrode and thick on the side connected to an external circuit. (';4) A semiconductor element is inserted into the area surrounded by the thickened part of the metal lead for connection to an external circuit, and the electrode of the element is connected to the group of metal leads. The semiconductor device according to claim 1. The semiconductor device according to claim 2, characterized in that a group of metal leads is adhesively fixed to at least a side surface of the semiconductor element. The semiconductor device according to claim 2 (@ The semiconductor device according to claim 1, wherein the semiconductor element electrode and the metal lead are connected on the side opposite to the thickened portion of the metal lead for connection to an external circuit.