JPS59204283A - アモルフアス半導体光導電素子 - Google Patents

アモルフアス半導体光導電素子

Info

Publication number
JPS59204283A
JPS59204283A JP58079050A JP7905083A JPS59204283A JP S59204283 A JPS59204283 A JP S59204283A JP 58079050 A JP58079050 A JP 58079050A JP 7905083 A JP7905083 A JP 7905083A JP S59204283 A JPS59204283 A JP S59204283A
Authority
JP
Japan
Prior art keywords
amorphous semiconductor
layer
photoconductive
amorphous
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58079050A
Other languages
English (en)
Japanese (ja)
Other versions
JPH049389B2 (enrdf_load_stackoverflow
Inventor
Isao Sakata
功 坂田
Yutaka Hayashi
豊 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58079050A priority Critical patent/JPS59204283A/ja
Publication of JPS59204283A publication Critical patent/JPS59204283A/ja
Publication of JPH049389B2 publication Critical patent/JPH049389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Light Receiving Elements (AREA)
JP58079050A 1983-05-06 1983-05-06 アモルフアス半導体光導電素子 Granted JPS59204283A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58079050A JPS59204283A (ja) 1983-05-06 1983-05-06 アモルフアス半導体光導電素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58079050A JPS59204283A (ja) 1983-05-06 1983-05-06 アモルフアス半導体光導電素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5180666A Division JPH07118549B2 (ja) 1993-06-25 1993-06-25 アモルフアス半導体光導電素子

Publications (2)

Publication Number Publication Date
JPS59204283A true JPS59204283A (ja) 1984-11-19
JPH049389B2 JPH049389B2 (enrdf_load_stackoverflow) 1992-02-20

Family

ID=13679066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58079050A Granted JPS59204283A (ja) 1983-05-06 1983-05-06 アモルフアス半導体光導電素子

Country Status (1)

Country Link
JP (1) JPS59204283A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137484A (ja) * 1986-11-29 1988-06-09 Pentel Kk 半導体デバイス
US4980736A (en) * 1987-03-23 1990-12-25 Hitachi, Ltd. Electric conversion device
JPH0878719A (ja) * 1994-09-01 1996-03-22 Nec Corp 光電変換素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137484A (ja) * 1986-11-29 1988-06-09 Pentel Kk 半導体デバイス
US4980736A (en) * 1987-03-23 1990-12-25 Hitachi, Ltd. Electric conversion device
JPH0878719A (ja) * 1994-09-01 1996-03-22 Nec Corp 光電変換素子

Also Published As

Publication number Publication date
JPH049389B2 (enrdf_load_stackoverflow) 1992-02-20

Similar Documents

Publication Publication Date Title
US4849797A (en) Thin film transistor
EP0122778B1 (en) Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4954856A (en) Semiconductor photoelectric conversion device and method of making the same
EP0165764B1 (en) Depletion mode thin film semiconductor photodetectors
EP0204567A2 (en) Thin film solar module
JPS6155268B2 (enrdf_load_stackoverflow)
KR890003148B1 (ko) 반도체 광전 변환장치 및 그 제조방법
US5923049A (en) Trichromatic sensor
JPH0359588B2 (enrdf_load_stackoverflow)
JPS5846074B2 (ja) 光起電力装置の製造方法
JP2798774B2 (ja) 光センサー及びその製造方法
JPS5821827B2 (ja) 光起電力装置
JPS59204283A (ja) アモルフアス半導体光導電素子
JP3091151B2 (ja) 集積型光起電力装置の製造方法
CA1157136A (en) Light-activated p-i-n switch
US4772933A (en) Method for compensating operationally-induced defects and semiconductor device made thereby
JPH0722643A (ja) アモルフアス半導体光導電素子
JPS5983916A (ja) アモルフアス多元系半導体
JP3295725B2 (ja) 光電変換素子
JPS60239068A (ja) 光起電力装置
JPS59202673A (ja) 重畳型光検知器
JP2000299487A (ja) 紫外線用受光素子
JPS6199386A (ja) 光起電力装置
CN120152500A (zh) 一种具有栅介质光敏夹层的光电晶体管
JP3242513B2 (ja) 光電変換装置