JPS59201464A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS59201464A
JPS59201464A JP58076460A JP7646083A JPS59201464A JP S59201464 A JPS59201464 A JP S59201464A JP 58076460 A JP58076460 A JP 58076460A JP 7646083 A JP7646083 A JP 7646083A JP S59201464 A JPS59201464 A JP S59201464A
Authority
JP
Japan
Prior art keywords
potential
transistor
memory cell
memory device
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58076460A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146978B2 (cs
Inventor
Toru Furuyama
古山　透
Yukimasa Uchida
内田　幸正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58076460A priority Critical patent/JPS59201464A/ja
Publication of JPS59201464A publication Critical patent/JPS59201464A/ja
Publication of JPS6146978B2 publication Critical patent/JPS6146978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58076460A 1983-04-30 1983-04-30 半導体記憶装置 Granted JPS59201464A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58076460A JPS59201464A (ja) 1983-04-30 1983-04-30 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58076460A JPS59201464A (ja) 1983-04-30 1983-04-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59201464A true JPS59201464A (ja) 1984-11-15
JPS6146978B2 JPS6146978B2 (cs) 1986-10-16

Family

ID=13605767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58076460A Granted JPS59201464A (ja) 1983-04-30 1983-04-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS59201464A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179935A (ja) * 1984-09-28 1986-04-23 Yamatake Honeywell Co Ltd 放射熱遮断ダクト
JPS61265792A (ja) * 1985-05-20 1986-11-25 Fujitsu Ltd 半導体記憶回路
JPS6364359A (ja) * 1986-09-04 1988-03-22 Sony Corp 半導体記憶装置
US5822267A (en) * 1986-07-18 1998-10-13 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179935A (ja) * 1984-09-28 1986-04-23 Yamatake Honeywell Co Ltd 放射熱遮断ダクト
JPS61265792A (ja) * 1985-05-20 1986-11-25 Fujitsu Ltd 半導体記憶回路
US6125075A (en) * 1985-07-22 2000-09-26 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US6363029B1 (en) 1985-07-22 2002-03-26 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US6970391B2 (en) 1985-07-22 2005-11-29 Renesas Technology Corporation Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US5822267A (en) * 1986-07-18 1998-10-13 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US7002856B2 (en) 1986-07-18 2006-02-21 Renesas Technology Corporation Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JPS6364359A (ja) * 1986-09-04 1988-03-22 Sony Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS6146978B2 (cs) 1986-10-16

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