JPS59201454A - 半導体装置のワイヤ・ボンデイング用Ｐｄ細線 - Google Patents

半導体装置のワイヤ・ボンデイング用Ｐｄ細線

Info

Publication number
JPS59201454A
JPS59201454A JP58075334A JP7533483A JPS59201454A JP S59201454 A JPS59201454 A JP S59201454A JP 58075334 A JP58075334 A JP 58075334A JP 7533483 A JP7533483 A JP 7533483A JP S59201454 A JPS59201454 A JP S59201454A
Authority
JP
Japan
Prior art keywords
wire
bonding
less
hardness
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58075334A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237698B2 (enExample
Inventor
Naoyuki Hosoda
細田　直之
Masayuki Tanaka
正幸 田中
Tamotsu Mori
保 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58075334A priority Critical patent/JPS59201454A/ja
Publication of JPS59201454A publication Critical patent/JPS59201454A/ja
Publication of JPH0237698B2 publication Critical patent/JPH0237698B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/015—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H10W72/50—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/952—

Landscapes

  • Wire Bonding (AREA)
JP58075334A 1983-04-28 1983-04-28 半導体装置のワイヤ・ボンデイング用Ｐｄ細線 Granted JPS59201454A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58075334A JPS59201454A (ja) 1983-04-28 1983-04-28 半導体装置のワイヤ・ボンデイング用Ｐｄ細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58075334A JPS59201454A (ja) 1983-04-28 1983-04-28 半導体装置のワイヤ・ボンデイング用Ｐｄ細線

Publications (2)

Publication Number Publication Date
JPS59201454A true JPS59201454A (ja) 1984-11-15
JPH0237698B2 JPH0237698B2 (enExample) 1990-08-27

Family

ID=13573249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58075334A Granted JPS59201454A (ja) 1983-04-28 1983-04-28 半導体装置のワイヤ・ボンデイング用Ｐｄ細線

Country Status (1)

Country Link
JP (1) JPS59201454A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021833A1 (fr) * 1993-03-19 1994-09-29 Nippon Steel Corporation Fil fin d'alliage de palladium pour liaison par fil d'elements semiconducteurs
CN113241303A (zh) * 2021-05-19 2021-08-10 合肥矽格玛应用材料有限公司 封装键合铂金丝及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169342A (en) * 1980-05-31 1981-12-26 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169342A (en) * 1980-05-31 1981-12-26 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994021833A1 (fr) * 1993-03-19 1994-09-29 Nippon Steel Corporation Fil fin d'alliage de palladium pour liaison par fil d'elements semiconducteurs
US5637274A (en) * 1993-03-19 1997-06-10 Nippon Steel Corporation Palladium alloy thin wire for wire bonding semiconductor elements
CN113241303A (zh) * 2021-05-19 2021-08-10 合肥矽格玛应用材料有限公司 封装键合铂金丝及其制备方法

Also Published As

Publication number Publication date
JPH0237698B2 (enExample) 1990-08-27

Similar Documents

Publication Publication Date Title
JP3418301B2 (ja) 打抜加工性に優れた電気電子機器用銅合金
JP2873770B2 (ja) 半導体素子のワイヤボンディング用パラジウム細線
JPH0211013B2 (enExample)
JP2911886B2 (ja) セリウムミッシュメタルを含有する金合金から成る極細線及びその製造方法
JPH0212022B2 (enExample)
JPS59139663A (ja) 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線
JPS59201454A (ja) 半導体装置のワイヤ・ボンデイング用Ｐｄ細線
JP2008127606A (ja) 酸化膜密着性に優れた高強度銅合金板
JPS6112011B2 (enExample)
JPH0978162A (ja) 電子機器用銅合金およびその製造方法
JPH0726167B2 (ja) 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JP4186199B2 (ja) 耐打抜き金型摩耗性、耐繰り返し曲げ疲労特性およびはんだ付け性に優れた銅合金
JPS6140290B2 (enExample)
JPS63235442A (ja) 銅細線及びその製造方法
JPS6222469A (ja) 半導体装置用ボンデイングワイヤ
JPS61224443A (ja) 半導体装置用ボンデイングワイヤ
JP2706539B2 (ja) ボンディングワイヤー
JPS58147139A (ja) 半導体装置のリ−ド材
JPS62170448A (ja) アルミニウム極細線
JPS58147140A (ja) 半導体装置のリ−ド材
JPS622645A (ja) 半導体装置用ボンデイングワイヤ
JPH0325495B2 (enExample)
JPS63247325A (ja) 銅細線及びその製造方法
JPS5839901B2 (ja) リ−ドフレ−ム用の銅合金
JPS6294969A (ja) 半導体装置用ボンデイングワイヤ