JPS59198770A - Photo receiving electronic device - Google Patents
Photo receiving electronic deviceInfo
- Publication number
- JPS59198770A JPS59198770A JP58073182A JP7318283A JPS59198770A JP S59198770 A JPS59198770 A JP S59198770A JP 58073182 A JP58073182 A JP 58073182A JP 7318283 A JP7318283 A JP 7318283A JP S59198770 A JPS59198770 A JP S59198770A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- receiving element
- light
- transparent
- photo receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は透明絶縁基板に受光素子が７リツプチツプ方式
で取り付けられ、基板を透過して入射す動
る光によシ受光素子が動作する、例えば自然焦点装置な
どの受光電子装置に関する。[Detailed Description of the Invention] [Technical Field to which the Invention Pertains] The present invention relates to a method in which a light receiving element is attached to a transparent insulating substrate using a seven-lip chip method, and the light receiving element is operated by moving light that passes through the substrate and enters the substrate. It relates to light-receiving electronic devices, such as, for example, natural focus devices.
そのような受光電子装置は、例えば第１図に示すような
受光素子チップ１が第２図に示す透明ガラス基板２に第
３図に示すように取り付けることによって組み立てられ
る。すなわち、受光素子チップ１は中央に光感受部３、
周辺にバンブ電極４を有し、ガラス基板２に印刷形成さ
れた導体パターン５にバンブ電極４を、例えばはんだに
より固着することによってガラス基板２に支持される。Such a light-receiving electronic device is assembled, for example, by attaching a light-receiving element chip 1 as shown in FIG. 1 to a transparent glass substrate 2 shown in FIG. 2 as shown in FIG. 3. That is, the light receiving element chip 1 has a light sensing portion 3 in the center,
It has a bump electrode 4 around its periphery, and is supported by the glass substrate 2 by fixing the bump electrode 4 to a conductor pattern 5 printed on the glass substrate 2, for example, by soldering.
この場合ガラス基板２と受光素子光感受部３との間には
、通常およそ１００μｍまたはそれ以下の間隔ｄが保持
される。矢印の方向から入射する光６がガラス基板を透
過した後この間隔ｄの空間７の空気層を通過する際、屈
折が起こって光感受部３への到達率が低下する。このた
め入射する光６の光量が少ないと、受光素子の動作は不
可能かまたは不安定となる。この対策として空間７にガ
ラス基板２とほぼ同等の光学的性質を有する液状物質を
充填することが考えられるが、そのためには液密構造を
とらねばならず、また液状物質の量もかなり多くなるの
で装置の構造の強度の点にも問題が生じ実現には困難が
伴なう。In this case, a distance d of approximately 100 μm or less is usually maintained between the glass substrate 2 and the photosensitive portion 3 of the light receiving element. When the light 6 incident from the direction of the arrow passes through the glass substrate and then passes through the air layer in the space 7 having the distance d, refraction occurs and the rate of arrival at the photosensitive section 3 decreases. Therefore, if the amount of incident light 6 is small, the operation of the light receiving element becomes impossible or unstable. As a countermeasure to this problem, filling the space 7 with a liquid substance having almost the same optical properties as the glass substrate 2 may be considered, but this would require a liquid-tight structure and the amount of liquid substance would be considerably large. Therefore, problems arise in terms of the strength of the structure of the device, and implementation is difficult.
本発明は、これに対して外部からの入射光の光感受部へ
の到達効率を向上させた受光電子装置の構造が製造工程
的に容易に得られるようにすることを目的とする。In contrast, it is an object of the present invention to provide a structure for a light-receiving electronic device that improves the efficiency with which incident light from the outside reaches a photosensitive portion, which can be easily obtained in terms of manufacturing process.
本発明は、バング電極によって透明絶縁基板に固着され
る受光素子の間に両面がそれぞれ受光素子光感受部およ
び透明基板に密着し、その基板拐料とほぼ同等の光学的
性質を有する材料からなる透明間隔片がそう入官れるこ
とにより上記の目的を達成する。The present invention is made of a material that has optical properties substantially equivalent to those of the substrate material, with both sides of the photodetector being in close contact with the photosensitive portion of the photodetector and the transparent substrate, respectively, between the photodetector that is fixed to the transparent insulating substrate by a bang electrode. The transparent spacer is thus incorporated to achieve the above objectives.
第４図において、受光素子１のバンプ電極４をガラス基
板２の導体部５に固着する前に例えば第５図のような光
感受部３よりやや大きい方形の形状をもち、厚さｄの透
明フィルム８の一面を光感受部に密着させ、バンプ電極
４の固着と同時に透明フィルム８の他面をガラス基板２
の表面に密着させる。この透明フィルム８の材料に基板
２の材料と同等の光学的性質をもつ材料を選べば、入射
光６は基板２と受光素子の光感受部３との間で屈折する
ことなく、高効率で光感受部へ到達する。In FIG. 4, before the bump electrode 4 of the light-receiving element 1 is fixed to the conductor part 5 of the glass substrate 2, it has a rectangular shape slightly larger than the light-sensing part 3 as shown in FIG. One side of the film 8 is brought into close contact with the photosensitive part, and the other side of the transparent film 8 is brought into close contact with the glass substrate 2 at the same time as the bump electrode 4 is fixed.
adhere to the surface of the If a material with the same optical properties as the material of the substrate 2 is selected for the material of the transparent film 8, the incident light 6 will not be refracted between the substrate 2 and the light-sensing part 3 of the light-receiving element, and will be highly efficient. It reaches the light sensing part.
以上述べたように、本発明はフリツノチップ方式で取り
付けられる受光素子と透明絶縁基板との間に生ずる間隙
に基板とほぼ同等のブＣ庁的性質を持つ透明間隔片を介
在せしめて間隙におりる屈折の発生による光到達率の低
下を防止するもので、構造が簡単で容易に組み立てられ
る効率良好な受光を子装置を提供することができ、その
効果はすこぶる大である。As described above, the present invention interposes a transparent spacing piece having substantially the same properties as the substrate in the gap created between the light-receiving element attached by the fritless chip method and the transparent insulating substrate. This prevents a decrease in the light arrival rate due to the occurrence of refraction, and it is possible to provide a child device with a simple structure, easy assembly, and highly efficient light reception, and its effects are extremely large.
第１図は受ブＣ素子の平面図、第２図は透明絶縁基板の
平面図、第３図はそれから組み立てられｆ：従来の受光
電子装置の正面図、第４図は本発明の一実施例の正面図
、第５図はそれに用いられる透明間隔片の平面図である
。
１・・・受光素子、２・透明ガラス基板、３・・光感受
部、４・・・バング電極、５・・導体部、８・・・透明
間隔片（透明フィルム）。
第１図
第２図
第４図
第３図
第５図FIG. 1 is a plan view of the receiver C element, FIG. 2 is a plan view of the transparent insulating substrate, FIG. 3 is a front view of a conventional photodetector electronic device assembled from it, and FIG. 4 is an embodiment of the present invention. FIG. 5 is a front view of the example and a plan view of a transparent spacer used therein. DESCRIPTION OF SYMBOLS 1... Light receiving element, 2... Transparent glass substrate, 3... Photosensitive part, 4... Bang electrode, 5... Conductor part, 8... Transparent spacing piece (transparent film). Figure 1 Figure 2 Figure 4 Figure 3 Figure 5
Claims (1)
体部に固着することによって支持され、基板を透過する
光によって動作するものにおいて、受光素子と透明絶縁
基板との間に両面がそれぞれ受光素子光感受部および基
板に密着し、基板材料とほぼ同等の光学的性質を有する
材料からなる透明間隔片がそう人されたことを特徴とす
る受光電子装置。1) In a device in which the light receiving element is supported by a transparent insulating substrate with a bump electrode fixed to a conductor on the substrate and operates by light transmitted through the substrate, there is a light receiving element on both sides between the light receiving element and the transparent insulating substrate. 1. A light-receiving electronic device characterized in that a transparent spacing piece is made of a material that is in close contact with an element light-sensing portion and a substrate and has optical properties substantially the same as the substrate material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073182A JPS59198770A (en) | 1983-04-26 | 1983-04-26 | Photo receiving electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58073182A JPS59198770A (en) | 1983-04-26 | 1983-04-26 | Photo receiving electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59198770A true JPS59198770A (en) | 1984-11-10 |
Family
ID=13510737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58073182A Pending JPS59198770A (en) | 1983-04-26 | 1983-04-26 | Photo receiving electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198770A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62190776A (en) * | 1986-02-18 | 1987-08-20 | Seiko Instr & Electronics Ltd | Photoelectric conversion device |
| FR2644632A1 (en) * | 1988-04-22 | 1990-09-21 | Commissariat Energie Atomique | Detection element consisting of linear detector arrays |
| US5149958A (en) * | 1990-12-12 | 1992-09-22 | Eastman Kodak Company | Optoelectronic device component package |
| EP0690515A1 (en) | 1994-06-30 | 1996-01-03 | Eastman Kodak Company | Optoelectronic assembly and methods for producing and using the same |
| GB2372633A (en) * | 2001-02-24 | 2002-08-28 | Mitel Semiconductor Ab | Flip-chip mounted optical device |
-
1983
- 1983-04-26 JP JP58073182A patent/JPS59198770A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62190776A (en) * | 1986-02-18 | 1987-08-20 | Seiko Instr & Electronics Ltd | Photoelectric conversion device |
| FR2644632A1 (en) * | 1988-04-22 | 1990-09-21 | Commissariat Energie Atomique | Detection element consisting of linear detector arrays |
| EP0462345A1 (en) * | 1988-04-22 | 1991-12-27 | Commissariat A L'energie Atomique | Detection element comprising detector bars |
| US5149958A (en) * | 1990-12-12 | 1992-09-22 | Eastman Kodak Company | Optoelectronic device component package |
| USRE35069E (en) * | 1990-12-12 | 1995-10-24 | Eastman Kodak Company | Optoelectronic device component package |
| EP0690515A1 (en) | 1994-06-30 | 1996-01-03 | Eastman Kodak Company | Optoelectronic assembly and methods for producing and using the same |
| GB2372633A (en) * | 2001-02-24 | 2002-08-28 | Mitel Semiconductor Ab | Flip-chip mounted optical device |
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