JPS59196385A - 化学研摩液 - Google Patents
化学研摩液Info
- Publication number
- JPS59196385A JPS59196385A JP7196983A JP7196983A JPS59196385A JP S59196385 A JPS59196385 A JP S59196385A JP 7196983 A JP7196983 A JP 7196983A JP 7196983 A JP7196983 A JP 7196983A JP S59196385 A JPS59196385 A JP S59196385A
- Authority
- JP
- Japan
- Prior art keywords
- polishing liquid
- hydrogen peroxide
- surfactant
- window
- chemical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 28
- 239000007788 liquid Substances 0.000 title claims abstract description 16
- 239000000126 substance Substances 0.000 title claims abstract description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 23
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004094 surface-active agent Substances 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 21
- 238000002844 melting Methods 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 230000008018 melting Effects 0.000 abstract description 12
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- -1 polyoxyethylene Polymers 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 150000007513 acids Chemical class 0.000 abstract description 2
- 150000003973 alkyl amines Chemical class 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 230000036425 denaturation Effects 0.000 abstract 2
- 238000004925 denaturation Methods 0.000 abstract 2
- 150000002691 malonic acids Chemical class 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000000565 sealant Substances 0.000 abstract 1
- 235000011044 succinic acid Nutrition 0.000 abstract 1
- 150000003444 succinic acids Chemical class 0.000 abstract 1
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7196983A JPS59196385A (ja) | 1983-04-23 | 1983-04-23 | 化学研摩液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7196983A JPS59196385A (ja) | 1983-04-23 | 1983-04-23 | 化学研摩液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59196385A true JPS59196385A (ja) | 1984-11-07 |
| JPS6219511B2 JPS6219511B2 (enrdf_load_stackoverflow) | 1987-04-28 |
Family
ID=13475805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7196983A Granted JPS59196385A (ja) | 1983-04-23 | 1983-04-23 | 化学研摩液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59196385A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2634498A1 (fr) * | 1988-07-20 | 1990-01-26 | Organisation Europ Rech Nucle | Bain de polissage chimique de metaux et alliages de metaux |
| EP0351772A3 (en) * | 1988-07-19 | 1990-07-04 | HENKEL CORPORATION (a Delaware corp.) | Stabilized hydrogen peroxide |
| EP0698917A1 (de) * | 1994-08-25 | 1996-02-28 | Wacker-Siltronic Gesellschaft für Halbleitermaterialien mbH | Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben |
| US5827542A (en) * | 1996-02-12 | 1998-10-27 | Healthpoint, Ltd. | Quick acting chemical sterilant |
| US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| WO2004085707A1 (en) * | 2003-03-21 | 2004-10-07 | Swagelok Company | Aqueous metal finishing solution, methods for finishing metal components, system for cleaning metal components and finished brass products |
| EP1837393A3 (en) * | 2006-03-22 | 2008-05-21 | FUJIFILM Corporation | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
-
1983
- 1983-04-23 JP JP7196983A patent/JPS59196385A/ja active Granted
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0351772A3 (en) * | 1988-07-19 | 1990-07-04 | HENKEL CORPORATION (a Delaware corp.) | Stabilized hydrogen peroxide |
| FR2634498A1 (fr) * | 1988-07-20 | 1990-01-26 | Organisation Europ Rech Nucle | Bain de polissage chimique de metaux et alliages de metaux |
| EP0698917A1 (de) * | 1994-08-25 | 1996-02-28 | Wacker-Siltronic Gesellschaft für Halbleitermaterialien mbH | Reinigungsmittel und Verfahren zum Reinigen von Halbleiterscheiben |
| US5695572A (en) * | 1994-08-25 | 1997-12-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Cleaning agent and method for cleaning semiconductor wafers |
| CN1057330C (zh) * | 1994-08-25 | 2000-10-11 | 瓦克硅电子半导体材料有限公司 | 半导体晶片的清洗方法 |
| US6096348A (en) * | 1996-02-12 | 2000-08-01 | Healthpoint, Ltd. | Quick acting chemical sterilant |
| US5827542A (en) * | 1996-02-12 | 1998-10-27 | Healthpoint, Ltd. | Quick acting chemical sterilant |
| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US6316366B1 (en) | 1996-09-24 | 2001-11-13 | Cabot Microelectronics Corporation | Method of polishing using multi-oxidizer slurry |
| WO2004085707A1 (en) * | 2003-03-21 | 2004-10-07 | Swagelok Company | Aqueous metal finishing solution, methods for finishing metal components, system for cleaning metal components and finished brass products |
| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| EP1837393A3 (en) * | 2006-03-22 | 2008-05-21 | FUJIFILM Corporation | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
| US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6219511B2 (enrdf_load_stackoverflow) | 1987-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS59196385A (ja) | 化学研摩液 | |
| US2364993A (en) | Process for blackening copper or copper alloy surfaces | |
| SE8403834L (sv) | Kemisk angavsettning av titannitrid och liknande filmer | |
| FR2404024A1 (fr) | Compositions de polymeres a degradation reglee et leurs applications | |
| ES2083236T3 (es) | Procedimiento para la fabricacion de vidrios de ventanas con una elevada transmision de radiacion dentro de la zona espectral visible y con una elevada reflexion de radiacion dentro de la zona de radiacion termica. | |
| KR920702020A (ko) | 산화막의 형성방법 | |
| KR960030328A (ko) | 반도체 장치의 금속층 형성방법 | |
| US2836935A (en) | Surface treatment of molybdenum and tungsten for glass sealing | |
| EP0182368A3 (en) | Tarnish remover/metal polish formulation comprising a metal iodide, an acid and water | |
| KR970010936A (ko) | 반도체 장치의 세정에 사용되는 세정액 및 이를 이용한 세정방법 | |
| US3954498A (en) | Aluminum foil cleaning process | |
| US6723578B2 (en) | Method for the sulphidation treatment of III-V compound semiconductor surfaces | |
| JPH032347B2 (enrdf_load_stackoverflow) | ||
| JPH05226312A (ja) | 半導体薄膜素子の製造方法 | |
| US3369914A (en) | Method of chemically polishing iron, zinc and alloys thereof | |
| US3484929A (en) | Soldering methods and compositions | |
| JPS6331139A (ja) | 半導体用窓付パツケ−ジの製造方法 | |
| US2399770A (en) | Sealing of glass to metal | |
| JPH10188693A (ja) | ボンディングワイヤの製造方法 | |
| JPH0666516B2 (ja) | ウインドウキヤツプおよびその製造方法 | |
| SU860973A1 (ru) | Восстановительна среда дл пайки | |
| US3261089A (en) | Method of treating lead-in wires of electrode tubes | |
| RU2036538C1 (ru) | Способ защиты полупроводниковых приборов перед герметизацией | |
| FR2729942A1 (fr) | Procede de traitement d'un verre pour diminuer sa mouillabilite par le gallium et appareil fabrique a partir d'un verre ainsi traite | |
| KR890011056A (ko) | 반도체 장치의 제조방법 |