JPS59196385A - Chemical polishing liquid - Google Patents
Chemical polishing liquidInfo
- Publication number
- JPS59196385A JPS59196385A JP7196983A JP7196983A JPS59196385A JP S59196385 A JPS59196385 A JP S59196385A JP 7196983 A JP7196983 A JP 7196983A JP 7196983 A JP7196983 A JP 7196983A JP S59196385 A JPS59196385 A JP S59196385A
- Authority
- JP
- Japan
- Prior art keywords
- polishing liquid
- hydrogen peroxide
- surfactant
- window
- chemical polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光透過用窓部材を封止する低融点ガラスおよび
光透過用窓部材上にコーティングしたコーティング皮膜
等を変質、劣化させることなく、かつ安定的に化学研摩
処理が行える、低融点カラス封止された光透過用窓付キ
ャンプに用いて好適な化学研摩液に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides stable chemical polishing treatment without altering or deteriorating the low melting point glass that seals the light transmitting window member and the coating film coated on the light transmitting window member. This invention relates to a chemical polishing liquid suitable for use in a camp with a light transmission window sealed with low melting point glass.
ディンタルオーティオディスク等に用いられる半導体装
置は、金属外環上に固定されたし・サー素子等を光透過
用窓付キャップで気密封止して用いられる。この光透過
用窓付キャップ10ば、第1図に示されるように、Fe
−Ni合金、あるいはFe −Ni−Co合金を素材と
するキャンプ部材12に、キャップ部材12の中央に設
けた通孔14を覆って硬質カラスなどから成る光透過用
窓16が低融点ガラス18によって封止されているもの
である。Semiconductor devices used in dintal audio discs and the like are used with a laser element and the like fixed on a metal outer ring and hermetically sealed with a light-transmitting window cap. As shown in FIG. 1, this light transmission window cap 10 is made of Fe.
- A light transmitting window 16 made of hard glass or the like is formed by a low melting point glass 18 to cover the through hole 14 provided in the center of the cap member 12 on the camping member 12 made of -Ni alloy or Fe -Ni-Co alloy. It is sealed.
ところで光透過用窓16として用いられている硬質ガラ
スは軟化点が約700°Cであるから、これを封止する
低融点ガラス18は、封止時の熱によって光透過用窓1
6が軟化変形して平?fk度が損なわれないように封着
温度が約500°Cの鉛系のものが用いられる。また一
方、上記のごとく光透過用窓16が低融点ガラス18に
よって封止された光透過用窓付キャップ10は半導体素
子等を固定した金属外環とのシール性を向上させ、しか
して気密特性を向上させるべく、最終的にめっき処理が
なされるものであるが、前記の低融点カラス18を用い
て光透過用窓16を封止するためあらかじめFe−Ni
−Co合金等を素材とするキャップ部材12の表面に金
属酸化膜を施して、低融点ガラス18とキャップ部材1
2との気密特性を向上させるようにしている。一方、め
っきを施す前に、めっきを施す際に障害となるこの金属
酸化膜を除去するとともに、密着性のよいめっき皮膜を
得るため、光沢を有する平滑な金属面とするだめの化学
研摩処理が必要となる。By the way, the hard glass used as the light transmitting window 16 has a softening point of about 700°C, so the low melting point glass 18 that seals it is heated during sealing to cause the light transmitting window 1 to soften.
6 is softened and deformed and becomes flat? A lead-based material with a sealing temperature of about 500°C is used so that the fk degree is not impaired. On the other hand, the light-transmitting window cap 10 in which the light-transmitting window 16 is sealed with the low-melting glass 18 as described above improves the sealing performance with the metal outer ring to which the semiconductor element, etc. is fixed, and has an airtight property. In order to improve the quality, plating is finally performed, but in order to seal the light transmitting window 16 using the low melting point glass 18, Fe-Ni is coated in advance.
- A metal oxide film is applied to the surface of the cap member 12 made of Co alloy or the like, and the low melting point glass 18 and the cap member 1
This is to improve the airtightness between the two. On the other hand, before plating, in order to remove this metal oxide film that becomes an obstacle during plating, and to obtain a plating film with good adhesion, a chemical polishing treatment is performed to make the metal surface shiny and smooth. It becomes necessary.
本発明はこの化学研摩処理に用いる研摩液に関するもの
である。The present invention relates to a polishing liquid used in this chemical polishing treatment.
従来のFe−Ni合金あるいはFe−Ni−Co合金そ
のものの化学研摩液としては、塩素イオン混入の硝酸系
のものと、フッ化物混入の過酸化水素系のものがある。Conventional chemical polishing solutions for Fe--Ni alloys or Fe--Ni--Co alloys include those based on nitric acid mixed with chlorine ions and those based on hydrogen peroxide mixed with fluoride.
しかしながら、上記の化学研摩液を前記光透過用窓付キ
ャップ10の化学研摩処理に用いると、硝酸系のものに
あっては、研摩液中のNO,−CI−。However, when the above-mentioned chemical polishing liquid is used for the chemical polishing treatment of the light-transmitting window cap 10, NO, -CI-, etc. in the polishing liquid are removed if the polishing liquid is nitric acid-based.
CIl、COO−イオンそれぞれが、低融点ガラス成分
中の鉛と化学反応を起し、低融点カラス18を変質。Each of CIl and COO- ions causes a chemical reaction with lead in the low melting point glass component, altering the quality of the low melting point glass 18.
劣化させてしまうff1it点かある。また過酸化水素
系のものにあっては、混入されているフッ化物によって
、光透過用窓1G上に施されている無反射コーテイング
膜(MgF、皮膜)を変質させてしまったり、前記同様
に低融点ガラス18を変質、劣化させたり、あるいは光
透過用窓16そのものの表面をも侵食して平滑性を損ね
たりする難点がある。There are some ff1it points that degrade it. In addition, in the case of hydrogen peroxide-based products, the fluoride mixed in may alter the quality of the non-reflective coating film (MgF, film) applied on the light transmission window 1G, or as described above. There is a drawback that the low melting point glass 18 is altered or deteriorated, or the surface of the light transmitting window 16 itself is eroded and its smoothness is impaired.
したかって従来においては、上記の研摩液を光透過用窓
付キャップに使用するに際しては、処理温度、処理時間
等を調製してやむを得ず用いていたものであるが、作業
性に劣るうえに、上記の弊害は避は得す、気密不良、半
導体装置の特性劣化を招来していた。Therefore, in the past, when using the above-mentioned polishing liquid for a light-transmitting window cap, it was unavoidable to adjust the processing temperature, processing time, etc., but the workability was poor and the above-mentioned The negative effects of this are unavoidable, but they lead to poor airtightness and deterioration of the characteristics of semiconductor devices.
発明者は」二記の難点に鑑み、鋭意検討を重ねた結果、
従来のものは全てハロケンイオンが混入しており、この
ハロゲンイオンかカラス質を過度に侵食する根源である
ことに想到した。In view of the difficulties mentioned in Section 2, after careful consideration, the inventor has
All conventional products are contaminated with halogen ions, and we have come to the conclusion that these halogen ions are the root cause of excessive erosion of the glass.
本発明はこのような侵食性を有するハロケンイオンを混
入せず、低融点ガラスやコーティング皮膜などを変質劣
化させることがなく、かつ安定的に、作業性よく化学研
摩処理を行うことのできる、低融点カラス封止された光
透過用窓付キャップに用いて好適な化学研摩液を提供す
ることを目的とし、その特徴は、クエン酸、マロン酸、
コハク酸のうぢの1種の酸と、過酸化水素水と、硫酸と
、界面活性剤とを含むところにある。The present invention provides a low-melting-point material that does not contain such corrosive halokene ions, does not alter or deteriorate low-melting-point glass or coating films, and allows chemical polishing to be carried out stably and with good workability. The purpose is to provide a chemical polishing liquid suitable for use in glass-sealed caps with light transmission windows, and its characteristics include citric acid, malonic acid,
It contains one type of acid, succinic acid, hydrogen peroxide, sulfuric acid, and a surfactant.
酸としてはクエン酸が良好に用いられる。その他マロン
酸、コハク酸等の金属に対して侵食性の緩やかなものが
良好である。濃度は’15g//i〜25g/lの範囲
で有効であり、緩やかな研摩作用を呈する。Citric acid is preferably used as the acid. Other materials that are mildly corrosive to metals, such as malonic acid and succinic acid, are good. Concentrations in the range of 15 g//i to 25 g/l are effective and provide a mild abrasive effect.
過酸化水素水は分解し易いものであるが、適宜な界面活
性剤、例えばポリオキシエチレンアルキルアミン、ポリ
オギシエチレンアルキルエーテル等のエチレンオキサイ
ド系の界面活性剤を用いることによって、過酸化水素水
の分解の負触媒として作用し、特に過酸化水素水が分解
する温度条件を引き」二けるから、高温での安定した使
用が可能となり、研摩速度を速めることか可能となる。Although hydrogen peroxide is easily decomposed, hydrogen peroxide can be decomposed by using an appropriate surfactant, such as an ethylene oxide surfactant such as polyoxyethylene alkylamine or polyoxyethylene alkyl ether. It acts as a negative catalyst for decomposition, and in particular reduces the temperature conditions under which hydrogen peroxide decomposes, making it possible to use it stably at high temperatures and increasing the polishing speed.
過酸化水素水の濃度は150J/ff〜250−v e
の範囲が好適であり、また界面活性剤は0.05g/β
〜0.1g/6の微量で効果がある。The concentration of hydrogen peroxide solution is 150J/ff~250-v e
The preferred range is 0.05g/β of the surfactant.
A trace amount of ~0.1g/6 is effective.
硫酸はガラス質に対する侵食性が硝酸や塩酸等のvi、
酸に比してきわめて低く、高温状態でも変わらない。し
たがって高温状態で安定して」二連の金属に対する緩や
かな研摩作用を呈する。濃度的には40社/12〜60
−/βが好適である。Sulfuric acid is more corrosive to glass than nitric acid, hydrochloric acid, etc.
It is extremely low compared to acids and remains unchanged even at high temperatures. Therefore, it stably exhibits a gentle abrasive action on two metals at high temperatures. In terms of concentration, 40 companies/12-60
−/β is preferable.
(1)表1に種々の濃度設定における実施例を示す。(1) Table 1 shows examples at various concentration settings.
表1
(欠■里#jJ57゛C1姐l川寺間lO秒)なお硬質
ガラスに施したコーティング皮膜の変質は見られなかっ
た。Table 1 (Miscellaneous #jJ57゛C1㎧l川田ramaIOsec) No deterioration of the coating film applied to the hard glass was observed.
このようにFe−Ni合金、Fe−Ni−Co合金の良
好なめっき下地としての光沢面を得るには前述した組成
範囲か必要であり、またこの組成範囲では低融点カラス
の変質、劣化もない。In this way, in order to obtain a glossy surface that is a good plating base for Fe-Ni alloys and Fe-Ni-Co alloys, the composition range described above is necessary, and in this composition range, there is no alteration or deterioration of the low melting point glass. .
(2)次に、処理時間と研摩量との関係を第2図に示す
。なお組成は以下によった。(2) Next, FIG. 2 shows the relationship between processing time and polishing amount. The composition was as follows.
クエン酸 20g/j!
過酸化水素水 200.J/E
硫酸 50J/6
界面活性剤 0.05 g /β
処理開始温度 57℃
サンプル材質A Fe−Ni−Co 54%−2
9%−17%ザンプル材質BFe−Ni58%−42%
キャンプ部材12上に前記した密着性のよいめっきを施
すために必要な研摩量は10μm〜20μm程度である
から、第2図から明らかなように、処理温度57°Cに
おいては処理時間は10秒程度の短時間で充分である。Citric acid 20g/j! Hydrogen peroxide solution 200. J/E Sulfuric acid 50J/6 Surfactant 0.05 g/β Treatment start temperature 57°C Sample material A Fe-Ni-Co 54%-2
9%-17% Sample material BFe-Ni58%-42%
Since the amount of polishing necessary to apply the above-mentioned plating with good adhesion on the camping member 12 is about 10 μm to 20 μm, as is clear from FIG. 2, the processing time is 10 seconds at the processing temperature of 57°C. A short period of time is sufficient.
(3)(2)の条件でサンプル材質Aを用いて調べた、
研摩液量(mλ)/処理金属表面積(CII+)と全屈
表面状態との関係を表2に示す。(3) Examined using sample material A under the conditions of (2),
Table 2 shows the relationship between polishing liquid amount (mλ)/treated metal surface area (CII+) and total bending surface condition.
表 2
このように処理すべき金属表面積に対して研摩液量が少
ないと、反応熱によって液温か上昇し、金属表面に荒れ
や変色が生じたり、研摩液自体も過酸化水素水が分解し
て変質してしまうから、充分な液量で処理することか望
ましい。Table 2 If the amount of polishing solution is small relative to the metal surface area to be treated, the temperature of the solution will rise due to the heat of reaction, causing roughness and discoloration on the metal surface, and the hydrogen peroxide solution in the polishing solution itself will decompose. It is advisable to use a sufficient amount of liquid to avoid deterioration.
以上のように本発明に係る化学研摩液によれば、光透過
用窓を封止する低融点カラスを変質、劣化させることな
く、さらに光透過用窓面に施したコーティング皮膜や光
透過用窓そのものの表面をも変質させたり劣化させたり
することなく、かつ良好なめっきを得るための金属表面
を短時間に得ることができるという著効を奏する。As described above, the chemical polishing liquid of the present invention does not alter or deteriorate the low-melting point glass that seals the light-transmitting window, and also prevents the coating film applied to the light-transmitting window surface from changing or deteriorating. It has the remarkable effect that a metal surface for obtaining good plating can be obtained in a short time without altering or deteriorating the surface of the metal itself.
以上本発明につき好適な実施例を挙げて種々説明したが
、本発明はこの実施例に限定されるものではなく、発明
の精神を逸脱しない範囲内で多(の改変を施し得るのは
もちろんのことである。Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.
第1図は光透過用窓付キャップを示す説明図、第2図は
本発明に係る研摩液で処理した際の処理時間と研摩量と
の関係を示すグラフである。
10・・・光透過用窓付キャップ、 12・・・キャ
ップ部材、 14・・・透孔、 16・・・光ふ適
用窓、 18・・・低融点ガラス。
特許出願人
新光電気工業株式会社
代表者光延丈喜夫FIG. 1 is an explanatory diagram showing a cap with a window for light transmission, and FIG. 2 is a graph showing the relationship between processing time and polishing amount when processing with a polishing liquid according to the present invention. DESCRIPTION OF SYMBOLS 10... Cap with window for light transmission, 12... Cap member, 14... Through hole, 16... Window for light application, 18... Low melting point glass. Patent applicant Shinko Electric Industry Co., Ltd. Representative Takekio Mitsunobu
Claims (1)
、過酸化水素水と、硫酸と、界面活性剤とを含む化学研
摩液。1. A chemical polishing liquid containing one type of acid selected from citric acid, malonic acid, and succinic acid, hydrogen peroxide, sulfuric acid, and a surfactant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7196983A JPS59196385A (en) | 1983-04-23 | 1983-04-23 | Chemical polishing liquid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7196983A JPS59196385A (en) | 1983-04-23 | 1983-04-23 | Chemical polishing liquid |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59196385A true JPS59196385A (en) | 1984-11-07 |
JPS6219511B2 JPS6219511B2 (en) | 1987-04-28 |
Family
ID=13475805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7196983A Granted JPS59196385A (en) | 1983-04-23 | 1983-04-23 | Chemical polishing liquid |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59196385A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0351772A2 (en) * | 1988-07-19 | 1990-01-24 | HENKEL CORPORATION (a Delaware corp.) | Stabilized hydrogen peroxide |
FR2634498A1 (en) * | 1988-07-20 | 1990-01-26 | Organisation Europ Rech Nucle | Bath for chemical polishing of metals and metal alloys |
EP0698917A1 (en) * | 1994-08-25 | 1996-02-28 | Wacker-Siltronic Gesellschaft für Halbleitermaterialien mbH | Cleaning agent and process for cleaning semiconductor wafers |
US5827542A (en) * | 1996-02-12 | 1998-10-27 | Healthpoint, Ltd. | Quick acting chemical sterilant |
US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
WO2004085707A1 (en) * | 2003-03-21 | 2004-10-07 | Swagelok Company | Aqueous metal finishing solution, methods for finishing metal components, system for cleaning metal components and finished brass products |
EP1837393A3 (en) * | 2006-03-22 | 2008-05-21 | FUJIFILM Corporation | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
-
1983
- 1983-04-23 JP JP7196983A patent/JPS59196385A/en active Granted
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0351772A2 (en) * | 1988-07-19 | 1990-01-24 | HENKEL CORPORATION (a Delaware corp.) | Stabilized hydrogen peroxide |
EP0351772A3 (en) * | 1988-07-19 | 1990-07-04 | HENKEL CORPORATION (a Delaware corp.) | Stabilized hydrogen peroxide |
FR2634498A1 (en) * | 1988-07-20 | 1990-01-26 | Organisation Europ Rech Nucle | Bath for chemical polishing of metals and metal alloys |
CN1057330C (en) * | 1994-08-25 | 2000-10-11 | 瓦克硅电子半导体材料有限公司 | Cleaning agent and method for cleaning semiconductor wafers |
US5695572A (en) * | 1994-08-25 | 1997-12-09 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Cleaning agent and method for cleaning semiconductor wafers |
EP0698917A1 (en) * | 1994-08-25 | 1996-02-28 | Wacker-Siltronic Gesellschaft für Halbleitermaterialien mbH | Cleaning agent and process for cleaning semiconductor wafers |
US5827542A (en) * | 1996-02-12 | 1998-10-27 | Healthpoint, Ltd. | Quick acting chemical sterilant |
US6096348A (en) * | 1996-02-12 | 2000-08-01 | Healthpoint, Ltd. | Quick acting chemical sterilant |
US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US6316366B1 (en) | 1996-09-24 | 2001-11-13 | Cabot Microelectronics Corporation | Method of polishing using multi-oxidizer slurry |
WO2004085707A1 (en) * | 2003-03-21 | 2004-10-07 | Swagelok Company | Aqueous metal finishing solution, methods for finishing metal components, system for cleaning metal components and finished brass products |
US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
EP1837393A3 (en) * | 2006-03-22 | 2008-05-21 | FUJIFILM Corporation | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
Also Published As
Publication number | Publication date |
---|---|
JPS6219511B2 (en) | 1987-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS59196385A (en) | Chemical polishing liquid | |
US4579752A (en) | Enhanced corrosion resistance of metal surfaces | |
SE8403834L (en) | CHEMICAL STATEMENT OF TITAN NITRID AND SIMILAR MOVIES | |
FR2404024A1 (en) | COMPOSITIONS OF POLYMERS WITH CONTROLLED DEGRADATION AND THEIR APPLICATIONS | |
US3951327A (en) | Ceramic to metal seal | |
ES2083236T3 (en) | PROCEDURE FOR THE MANUFACTURE OF WINDOW GLASSES WITH A HIGH RADIATION TRANSMISSION WITHIN THE VISIBLE SPECTRAL AREA AND WITH A HIGH RADIATION REFLECTION WITHIN THE THERMAL RADIATION AREA. | |
JPS62272541A (en) | Surface treating method for semiconductor substrate | |
US5635084A (en) | Method for creating a corrosion-resistant surface on an aluminum-copper alloy | |
US2836935A (en) | Surface treatment of molybdenum and tungsten for glass sealing | |
EP0182368A3 (en) | Tarnish remover/metal polish formulation comprising a metal iodide, an acid and water | |
KR970010936A (en) | Cleaning solution for cleaning semiconductor device and cleaning method using same | |
US3954498A (en) | Aluminum foil cleaning process | |
US6723578B2 (en) | Method for the sulphidation treatment of III-V compound semiconductor surfaces | |
JPH06346255A (en) | Treatment of surface of stainless steel | |
JPH032347B2 (en) | ||
US3369914A (en) | Method of chemically polishing iron, zinc and alloys thereof | |
US2399770A (en) | Sealing of glass to metal | |
SU1323608A1 (en) | Method of local protection of articles in liquid borating | |
JPH01214143A (en) | Manufacture of hermetic component with light transmission window | |
SU860973A1 (en) | Reduction medium for soldering | |
US3261089A (en) | Method of treating lead-in wires of electrode tubes | |
RU2036538C1 (en) | Method for protection of semiconductor devices prior to their sealing | |
SU929374A1 (en) | Flux for protecting solder from oxydation | |
KR890011056A (en) | Manufacturing Method of Semiconductor Device | |
JPS6229149A (en) | Window cap |