JPS6219511B2 - - Google Patents

Info

Publication number
JPS6219511B2
JPS6219511B2 JP7196983A JP7196983A JPS6219511B2 JP S6219511 B2 JPS6219511 B2 JP S6219511B2 JP 7196983 A JP7196983 A JP 7196983A JP 7196983 A JP7196983 A JP 7196983A JP S6219511 B2 JPS6219511 B2 JP S6219511B2
Authority
JP
Japan
Prior art keywords
acid
melting point
point glass
transmitting window
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7196983A
Other languages
Japanese (ja)
Other versions
JPS59196385A (en
Inventor
Takeshi Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP7196983A priority Critical patent/JPS59196385A/en
Publication of JPS59196385A publication Critical patent/JPS59196385A/en
Publication of JPS6219511B2 publication Critical patent/JPS6219511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • C23F3/06Heavy metals with acidic solutions

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は光透過用窓部材を封止する低融点ガラ
スおよび光透過用窓部材上にコーテイングしたコ
ーテイング皮膜等を変質、劣化させることなく、
かつ安定的に化学研摩処理が行える、低融点ガラ
ス封止された光透過用窓付キヤツプに用いて好適
な化学研摩液に関する。 デイジタルオーデイオデイスク等に用いられる
半導体装置は、金属外環上に固定されたレザー素
子等を光透過用窓付キヤツプで気密封止して用い
られる。この光透過用窓付キヤツプ10は、第1
図に示されるように、Fe―Ni合金、あるいはFe
―Ni―Co合金を素材とするキヤツプ部材12
に、キヤツプ部材12の中央に設けた透孔14を
覆つて硬質ガラスなどから成る光透過用窓16が
低融点ガラス18によつて封止されているもので
ある。ところで光透過用窓16として用いられて
いる硬質ガラスは軟化点が約700℃であるから、
これを封止する低融点ガラス18は、封止時の熱
によつて光透過用窓16が軟化変形して平滑度が
損なわれないように封着温度が約500℃の鉛系の
ものが用いられる。また一方、上記のごとく光透
過用窓16が低融点ガラス18によつて封止され
た光透過用窓付キヤツプ10は半導体素子等を固
定した金属外環とのシール性を向上させ、しかし
て気密特性を向上させるべく、最終的にめつき処
理がなされるものであるが、前記の低融点ガラス
18を用いて光透過用窓16を封止するためあら
かじめFe―Ni―Co合金等を素材とするキヤツプ
部材12の表面に金属酸化膜を施して、低融点ガ
ラス18とキヤツプ部材12との気密特性を向上
させるようにしている。一方、めつきを施す前
に、めつきを施す際に障害となるこの金属酸化膜
を除去するとともに、密着性のよいめつき皮膜を
得るため、光沢を有する平滑な金属面とするため
の化学研摩処理が必要となる。 本発明はこの化学研摩処理に用いる研摩液に関
するものである。 従来のFe―Ni合金あるいはFe―Ni―Co合金そ
のものの化学研摩液としては、塩素イオン混入の
硝酸系のものと、フツ化物混入の過酸化水素系の
ものがある。 しかしながら、上記の化学研摩液を前記光透過
用窓付キヤツプ10の化学研摩処理に用いると、
硝酸系のものにあつては、研摩液中のNO3 -
Cl-、CH3COO-イオンそれぞれが、低融点ガラ
ス成分中の鉛と化学反応を起し、低融点ガラス1
8を変質、劣化させてしまう難点がある。また過
酸化水素系のものにあつては、混入されているフ
ツ化物によつて、光透過用窓16上に施されてい
る無反対コーテイング膜(MgF2皮膜)を変質さ
せてしまつたり、前記同様に低融点ガラス18を
変質、劣化させたり、あるいは光透過用窓16そ
のものの表面をも侵食して平滑性を損ねたりする
難点がある。 したがつて従来においては、上記の研摩液を光
透過用窓付キヤツプに使用するに際しては、処理
温度、処理時間等を調製してやむを得ず用いてい
たものであるが、作業性に劣るうえに、上記の弊
害は避け得ず、気密不良、半導体装置の特性劣化
を招来していた。 発明者は上記の難点に鑑み、鋭意検討を重ねた
結果、従来のものは全てハロゲンイオンが混入し
ており、このハロゲンイオンがガラス質を過度に
侵食する根源であることに想到した。 本発明はこのような侵食性を有するハロゲンイ
オンを混入せず、低融点ガラスやコーテイング皮
膜などを変質劣化させることがなく、かつ安定的
に、作業性よく化学研摩処理を行うことのでき
る、低融点ガラス封止された光透過用窓付キヤツ
プに用いて好適な化学研摩液を提供することを目
的とし、その特徴は、クエン酸、マロン酸、コハ
ク酸のうちの1種の酸と、過酸化水素水と、硫酸
と、界面活性剤とを含むところにある。 酸としてはクエン酸が良好に用いられる。その
他マロン酸、コハク酸等の金属に対して侵食性の
緩やかなものが良好である。濃度は15g/〜25
g/の範囲で有効であり、緩やかな研摩作用を
呈する。 過酸化水素水は分解し易いものであるが、適宜
な界面活性剤、例えばポリオキシエチレンアルキ
ルアミン、ポリオキシエチレンアルキルエーテル
等のエチレンオキサイド系の界面活性剤を用いる
ことによつて、過酸化水素水の分解の負触媒とし
て作用し、特に過酸化水素水が分解する温度条件
を引き上げるから、高温での安定した使用が可能
となり、研摩速度を速めることが可能となる。過
酸化水素水の濃度は150ml/〜250ml/の範囲が
好適であり、また界面活性剤は0.05g/〜0.1
g/の微量で効果がある。 硫酸はガラス質に対する侵食性が硝酸や塩酸等
の鉱酸に比してきわめて低く、高温状態でも変わ
らない。したがつて高温状態で安定して上述の金
属に対する緩やかな研摩作用を呈する。濃度的に
は40ml/〜60ml/が好適である。 (1) 表1に種々の濃度設定における実施例を示
す。
The present invention does not alter or deteriorate the low melting point glass that seals the light transmitting window member and the coating film coated on the light transmitting window member.
The present invention also relates to a chemical polishing liquid suitable for use in a light-transmitting window cap sealed with low-melting glass, which can be stably subjected to chemical polishing treatment. 2. Description of the Related Art Semiconductor devices used in digital audio disks and the like include a laser element or the like fixed on a metal outer ring and hermetically sealed with a light-transmitting window cap. This light transmitting window cap 10 has a first
As shown in the figure, Fe-Ni alloy or Fe
-Cap member 12 made of Ni-Co alloy
Furthermore, a light transmitting window 16 made of hard glass or the like is sealed with a low melting point glass 18 covering a through hole 14 provided in the center of the cap member 12. By the way, since the hard glass used as the light transmission window 16 has a softening point of about 700°C,
The low melting point glass 18 that seals this is a lead-based glass with a sealing temperature of about 500°C to prevent the light transmission window 16 from softening and deforming due to the heat during sealing and impairing its smoothness. used. On the other hand, the light-transmitting window cap 10 in which the light-transmitting window 16 is sealed with the low-melting point glass 18 as described above improves the sealing performance with the metal outer ring to which a semiconductor element or the like is fixed. In order to improve the airtightness, plating is finally performed, but in order to seal the light transmitting window 16 using the low melting point glass 18, a material such as Fe-Ni-Co alloy is used in advance. A metal oxide film is applied to the surface of the cap member 12 to improve the airtightness between the low melting point glass 18 and the cap member 12. On the other hand, before plating, in order to remove this metal oxide film that becomes an obstacle during plating, and to obtain a plating film with good adhesion, a chemical process is carried out to create a glossy and smooth metal surface. Polishing treatment is required. The present invention relates to a polishing liquid used in this chemical polishing treatment. Conventional chemical polishing solutions for Fe--Ni alloys or Fe--Ni--Co alloys include those based on nitric acid containing chlorine ions and those based on hydrogen peroxide containing fluoride. However, when the above chemical polishing liquid is used for the chemical polishing treatment of the light transmitting window cap 10,
In the case of nitric acid-based polishing solutions, NO 3 - in the polishing solution,
Each of the Cl - and CH 3 COO - ions causes a chemical reaction with lead in the low melting point glass component, resulting in low melting point glass 1.
The problem is that it alters and deteriorates 8. In addition, in the case of hydrogen peroxide, the fluoride mixed in may alter the non-opposing coating film (MgF 2 film) applied on the light transmission window 16. Similarly to the above, there is a problem in that the low melting point glass 18 is altered or deteriorated, or the surface of the light transmitting window 16 itself is eroded and the smoothness is impaired. Therefore, in the past, when using the above-mentioned polishing liquid for a cap with a light-transmitting window, it was necessary to adjust the processing temperature, processing time, etc., but this was not only inferior in workability, but also The above disadvantages are unavoidable, resulting in poor airtightness and deterioration of the characteristics of the semiconductor device. In view of the above-mentioned difficulties, the inventor conducted extensive research and came to the conclusion that all conventional products are contaminated with halogen ions, and that these halogen ions are the root cause of excessive erosion of glass. The present invention does not incorporate such corrosive halogen ions, does not alter or deteriorate low melting point glass or coating films, and can stably perform chemical polishing treatment with good workability. The purpose is to provide a chemical polishing liquid suitable for use in caps with light transmission windows sealed with melting point glass, and its characteristics include one of citric acid, malonic acid, and succinic acid, It contains hydrogen oxide water, sulfuric acid, and a surfactant. Citric acid is preferably used as the acid. Other materials that are mildly corrosive to metals, such as malonic acid and succinic acid, are good. Concentration is 15g/~25
It is effective in the g/ range and exhibits a gentle abrasive action. Hydrogen peroxide is easily decomposed, but by using an appropriate surfactant, such as an ethylene oxide surfactant such as polyoxyethylene alkyl amine or polyoxyethylene alkyl ether, hydrogen peroxide can be decomposed easily. It acts as a negative catalyst for the decomposition of water, and in particular raises the temperature conditions under which hydrogen peroxide decomposes, making it possible to use it stably at high temperatures and increasing the polishing speed. The concentration of hydrogen peroxide solution is preferably in the range of 150ml/~250ml/, and the surfactant is 0.05g/~0.1
It is effective in small amounts of g/. Sulfuric acid is extremely less corrosive to glass than mineral acids such as nitric acid and hydrochloric acid, and remains unchanged even at high temperatures. Therefore, it stably exhibits a gentle polishing action on the above-mentioned metals at high temperatures. In terms of concentration, 40ml/~60ml/ is suitable. (1) Table 1 shows examples at various concentration settings.

【表】【table】

【表】 なお硬質ガラスに施したコーテイング皮膜の
変質は見られなかつた。 このようにFe―Ni合金、Fe―Ni―Co合金の
良好なめつき下地としての光沢面を得るには前
述した組成範囲が必要であり、またこの組成範
囲では低融点ガラスの変質、劣化もない。 (2) 次に、処理時間と研摩量との関係を第2図に
示す。なお組成は以下によつた。 クエン酸 20g/ 過酸化水素水 20ml/ 硫 酸 50ml/ 界面活性剤 0.05g/ 処理開始温度 57℃ サンプル材質A Fe―Ni―Co 54%―29%―17% サンプル材質B Fe―Ni 58%―42% キヤツプ部材12上に前記した密着性のよい
めつきを施すために必要な研摩量は10μm〜20
μm程度であるから、第2図から明らかなよう
に、処理温度57℃においては処理時間は10秒程
度の短時間で充分である。 (3) (2)の条件でサンプル材質Aを用いて調べた、
研摩液量(ml)/処理金属表面積(cm2)と金属
表面状態との関係を表2に示す。
[Table] No deterioration of the coating film applied to the hard glass was observed. In this way, the above-mentioned composition range is necessary to obtain a glossy surface that serves as a good plating base for Fe-Ni alloys and Fe-Ni-Co alloys, and in this composition range, there is no alteration or deterioration of low melting point glass. . (2) Next, Figure 2 shows the relationship between processing time and polishing amount. The composition was as follows. Citric acid 20g / Hydrogen peroxide 20ml / Sulfuric acid 50ml / Surfactant 0.05g / Treatment start temperature 57℃ Sample material A Fe―Ni―Co 54%―29%―17% Sample material B Fe―Ni 58%― 42% The amount of polishing required to provide the above-mentioned plating with good adhesion on the cap member 12 is 10 μm to 20 μm.
Since the diameter is about .mu.m, as is clear from FIG. 2, at a processing temperature of 57.degree. C., a short processing time of about 10 seconds is sufficient. (3) Examined using sample material A under the conditions of (2),
Table 2 shows the relationship between polishing liquid amount (ml)/treated metal surface area (cm 2 ) and metal surface condition.

【表】【table】

【表】 このように処理すべき金属表面積に対して研摩
液量が少ないと、反応熱によつて液温が上昇し、
金属表面に荒れや変色が生じたり、研摩液自体も
過酸化水素水が分解して変質してしまうから、充
分な液量で処理することが望ましい。 以上のように本発明に係る化学研摩液によれ
ば、光透過用窓を封止する低融点ガラスを変質、
劣化させることなく、さらに光透過用窓面に施し
たコーテイング皮膜や光透過用窓そのものの表面
をも変質させたり劣化させたりすることなく、か
つ良好なめつきを得るための金属表面を短時間に
得ることができるという著効を奏する。 以上本発明につき好適な実施例を挙げて種々説
明したが、本発明はこの実施例に限定されるもの
ではなく、発明の精神を逸脱しない範囲内で多く
の改変を施し得るのはもちろんのことである。
[Table] If the amount of polishing liquid is small relative to the surface area of the metal to be treated, the temperature of the polishing liquid will rise due to the heat of reaction.
It is desirable to use a sufficient amount of polishing liquid to avoid roughness or discoloration on the metal surface, and decomposition of the hydrogen peroxide solution in the polishing liquid itself. As described above, the chemical polishing liquid according to the present invention alters the quality of the low melting point glass that seals the light transmission window.
Metal surfaces can be coated in a short time to obtain good plating without deteriorating or deteriorating the coating film applied to the light transmitting window surface or the surface of the light transmitting window itself. It is effective in that it can be obtained. Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. It is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は光透過用窓付キヤツプを示す説明図、
第2図は本発明に係る研摩液で処理した際の処理
時間と研摩量との関係を示すグラフである。 1…光透過用窓付キヤツプ、12…キヤツプ部
材、14…透孔、16…光透過用窓、18…低融
点ガラス。
Figure 1 is an explanatory diagram showing a cap with a window for light transmission;
FIG. 2 is a graph showing the relationship between treatment time and polishing amount when treated with the polishing liquid according to the present invention. DESCRIPTION OF SYMBOLS 1... Cap with window for light transmission, 12... Cap member, 14... Through hole, 16... Window for light transmission, 18... Low melting point glass.

Claims (1)

【特許請求の範囲】[Claims] 1 クエン酸、マロン酸、コハク酸のうちの1種
の酸と、過酸化水素水と、硫酸と、界面活性剤と
を含む化学研摩液。
1. A chemical polishing liquid containing one type of acid selected from citric acid, malonic acid, and succinic acid, hydrogen peroxide, sulfuric acid, and a surfactant.
JP7196983A 1983-04-23 1983-04-23 Chemical polishing liquid Granted JPS59196385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7196983A JPS59196385A (en) 1983-04-23 1983-04-23 Chemical polishing liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7196983A JPS59196385A (en) 1983-04-23 1983-04-23 Chemical polishing liquid

Publications (2)

Publication Number Publication Date
JPS59196385A JPS59196385A (en) 1984-11-07
JPS6219511B2 true JPS6219511B2 (en) 1987-04-28

Family

ID=13475805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7196983A Granted JPS59196385A (en) 1983-04-23 1983-04-23 Chemical polishing liquid

Country Status (1)

Country Link
JP (1) JPS59196385A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0351772A3 (en) * 1988-07-19 1990-07-04 HENKEL CORPORATION (a Delaware corp.) Stabilized hydrogen peroxide
FR2634498B1 (en) * 1988-07-20 1993-10-08 Organisation Europ Recherc Nucle BATH FOR CHEMICAL POLISHING OF METALS AND METAL ALLOYS
US5695572A (en) * 1994-08-25 1997-12-09 Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft Cleaning agent and method for cleaning semiconductor wafers
US5827542A (en) * 1996-02-12 1998-10-27 Healthpoint, Ltd. Quick acting chemical sterilant
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
WO2004085707A1 (en) * 2003-03-21 2004-10-07 Swagelok Company Aqueous metal finishing solution, methods for finishing metal components, system for cleaning metal components and finished brass products
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
TW200801178A (en) * 2006-03-22 2008-01-01 Fujifilm Corp Cleaning solution for substrate for use in semiconductor device and cleaning method using the same
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries

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Publication number Publication date
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