SU381119A1 - METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES - Google Patents

METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES

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Publication number
SU381119A1
SU381119A1 SU1697182A SU1697182A SU381119A1 SU 381119 A1 SU381119 A1 SU 381119A1 SU 1697182 A SU1697182 A SU 1697182A SU 1697182 A SU1697182 A SU 1697182A SU 381119 A1 SU381119 A1 SU 381119A1
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SU
USSR - Soviet Union
Prior art keywords
semiconductor devices
solder
screw
assembling semiconductor
making preparations
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Application number
SU1697182A
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Russian (ru)
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Priority to SU1697182A priority Critical patent/SU381119A1/en
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Publication of SU381119A1 publication Critical patent/SU381119A1/en

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Description

1one

Изобретение относитс  к технологии производства полупроводниковых приборов.The invention relates to the production technology of semiconductor devices.

Известны способы изготовлени  заготовок припо  ДЛЯ сборки полупроводниковых приборов методом прокатки и вырубки, при которых поверхность заготовок низкотемпературного припо , например, на основе свинца не обрабатываетс  ДЛЯ защиты от окислени . Эги способы не обеспечивают качественной пайки элементов полупроводниковых приборов, поскольку имеюща с  на поверхности припо  пленка окислов не восстанавливаетс  при пайке в водороде (не диссоциирует в вакууме) и преп тствует полной смачиваемости поверхности . Низкое качество контактов надежность и циклостойкость приборов и повыщает их тепловое сопротивление.There are known methods for producing solder blanks. For assembling semiconductor devices by the method of rolling and cutting, in which the surface of the blanks of low-temperature solder, for example, on the basis of lead, is not processed for protection against oxidation. These methods do not provide high-quality soldering of elements of semiconductor devices, since the surface of the solder oxide film is not restored when soldering in hydrogen (does not dissociate in vacuum) and prevents full surface wettability. The poor quality of the contacts reliability and cyclic stability of devices and increases their thermal resistance.

Согласно предлагаемому способу, с поверхности прокатанной ленты или вырубленных заготовок удал етс  пленка окислов химичесКИМ ИЛИ механическим путем и наноситс  тонкий СЛОЙ металла, окислы которого восстанавливаютс  водородом (например, слой никел ) ИЛИ диссоциируют (например, слой серебра) при нагреве в процессе пайки до расплавлени  припо . Нанесенный металл защищает припой от окислени , а в процессе пайки раствор етс  в припое. Толщина металлизации определ етс  химическим составом припо . Этот способ обеспечивает хорощее смачивание па емых поверхностей. Контакт характеризуетс  высокой надежностью и циклостойкостью, а тепловое сопротивление прибора снижаетс .According to the proposed method, a film of oxides is chemically or mechanically removed from the surface of a rolled tape or cut blanks and a thin LAYER of metal is deposited, the oxides of which are reduced by hydrogen (for example, a nickel layer) OR dissociate (for example, a silver layer) when heated during brazing before melting solder. The applied metal protects the solder from oxidation, and during the soldering process it dissolves in the solder. The thickness of the metallization is determined by the chemical composition of the solder. This method ensures good wetting of the emitted surfaces. The contact is characterized by high reliability and cycle resistance, and the thermal resistance of the device is reduced.

Дл  пайки припоем системы РЬ-In-Ag рекомендуетс  следующий способ подготовки припо . Ленту припо  состава РЬ+5% In, прокатанную до толщины 50-300 мкм, трав т 20-40 сек в травителе состава: 3,5% Н2О2 (30%-ной), 3,5% СНзСООН уд. вес. 1,05 г/см), остальное вода, промывают водой и погружают в гальваническую ванну дл  нанесени  серебра. Толщина покрыти  2-3 мкм. Затем из ленты вырубают диски припо  весом , обеспечивающим заданную толщину па ного щва, и площадью 5 - 50% от контактной площади сопр гаемых элементов дл  улучщени  непосредственного взаимодействи  припо  с поверхностью.For soldering with Pb-In-Ag solder, the following method of preparing solder is recommended. A Pb + 5% In solder tape, laminated to a thickness of 50–300 µm, is grated 20–40 sec in the etchant composition: 3.5% H2O2 (30%), 3.5% CH3COOH bpm. weight. 1.05 g / cm), the remainder is water, washed with water and immersed in a plating bath for applying silver. Coating thickness 2-3 µm. Then, solder discs are cut out of the tape with a weight that provides a predetermined thickness of the steam joint, and an area of 5 to 50% of the contact area of the mating elements to improve the direct interaction of the solder with the surface.

Нредмет изобретени Nredmet of the invention

Способ изготовлени  заготовок припо  дл  сборки полупроводниковых приборов путем прокатки и вырубки материала низкотемпературных припоев, например, на основе свинца , отличающийс  тем, что, с целью сниЛСени  теплового сопротивлени  и повыщени  надежности и циклостойкости приборов, с прокатанной поверхности удал ют пленку окислов и покрывают ее слоем металла, который при пайке раствор етс  в припое, а окислы металла при этом восстанавливаютс , например СЛОЙ никел .A method of making solder blanks for assembling semiconductor devices by rolling and cutting a material of low-temperature solders, for example, on the basis of lead, characterized in that, in order to reduce thermal resistance and increase the reliability and cycle resistance of devices, a film of oxide is removed from the rolled surface and covered with a layer metal, which when soldering dissolves in the solder, and metal oxides are reduced, for example, nickel LAYER.

SU1697182A 1971-09-06 1971-09-06 METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES SU381119A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU1697182A SU381119A1 (en) 1971-09-06 1971-09-06 METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1697182A SU381119A1 (en) 1971-09-06 1971-09-06 METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES

Publications (1)

Publication Number Publication Date
SU381119A1 true SU381119A1 (en) 1973-05-15

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SU1697182A SU381119A1 (en) 1971-09-06 1971-09-06 METHOD OF MAKING PREPARATIONS OF A SCREW FOR ASSEMBLING SEMICONDUCTOR DEVICES

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