JPS5919373A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS5919373A JPS5919373A JP57127563A JP12756382A JPS5919373A JP S5919373 A JPS5919373 A JP S5919373A JP 57127563 A JP57127563 A JP 57127563A JP 12756382 A JP12756382 A JP 12756382A JP S5919373 A JPS5919373 A JP S5919373A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polycrystalline silicon
- region
- forming
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 69
- 239000012535 impurity Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- JZUFKLXOESDKRF-UHFFFAOYSA-N Chlorothiazide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC2=C1NCNS2(=O)=O JZUFKLXOESDKRF-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 238000011282 treatment Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000005204 segregation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 BF Chemical compound 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127563A JPS5919373A (ja) | 1982-07-23 | 1982-07-23 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57127563A JPS5919373A (ja) | 1982-07-23 | 1982-07-23 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5919373A true JPS5919373A (ja) | 1984-01-31 |
| JPH0239861B2 JPH0239861B2 (cs) | 1990-09-07 |
Family
ID=14963121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57127563A Granted JPS5919373A (ja) | 1982-07-23 | 1982-07-23 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919373A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4735912A (en) * | 1986-06-09 | 1988-04-05 | Oki Electric Industry Co., Ltd. | Process of fabricating a semiconductor IC device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627965A (en) * | 1979-08-15 | 1981-03-18 | Nec Corp | Manufacture of semiconductor device |
-
1982
- 1982-07-23 JP JP57127563A patent/JPS5919373A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5627965A (en) * | 1979-08-15 | 1981-03-18 | Nec Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4735912A (en) * | 1986-06-09 | 1988-04-05 | Oki Electric Industry Co., Ltd. | Process of fabricating a semiconductor IC device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0239861B2 (cs) | 1990-09-07 |
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