JPS59184517A - 積層型半導体装置の製造方法 - Google Patents

積層型半導体装置の製造方法

Info

Publication number
JPS59184517A
JPS59184517A JP58058732A JP5873283A JPS59184517A JP S59184517 A JPS59184517 A JP S59184517A JP 58058732 A JP58058732 A JP 58058732A JP 5873283 A JP5873283 A JP 5873283A JP S59184517 A JPS59184517 A JP S59184517A
Authority
JP
Japan
Prior art keywords
islands
island
single crystal
semiconductor
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58058732A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136972B2 (fr
Inventor
Shigenobu Akiyama
秋山　重信
Koichi Kugimiya
公一 釘宮
Shigeji Yoshii
吉井　成次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58058732A priority Critical patent/JPS59184517A/ja
Publication of JPS59184517A publication Critical patent/JPS59184517A/ja
Publication of JPH0136972B2 publication Critical patent/JPH0136972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP58058732A 1983-04-05 1983-04-05 積層型半導体装置の製造方法 Granted JPS59184517A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58058732A JPS59184517A (ja) 1983-04-05 1983-04-05 積層型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58058732A JPS59184517A (ja) 1983-04-05 1983-04-05 積層型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59184517A true JPS59184517A (ja) 1984-10-19
JPH0136972B2 JPH0136972B2 (fr) 1989-08-03

Family

ID=13092675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58058732A Granted JPS59184517A (ja) 1983-04-05 1983-04-05 積層型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59184517A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006725A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体装置、その作製方法及び設計方法
JP2004006741A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体回路及びその作製方法
US7704812B2 (en) 2002-03-26 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US8093593B2 (en) 2001-12-21 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multichannel transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837918A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837918A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093593B2 (en) 2001-12-21 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multichannel transistor
JP2004006725A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体装置、その作製方法及び設計方法
JP2004006741A (ja) * 2002-03-26 2004-01-08 Semiconductor Energy Lab Co Ltd 半導体回路及びその作製方法
US7704812B2 (en) 2002-03-26 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same

Also Published As

Publication number Publication date
JPH0136972B2 (fr) 1989-08-03

Similar Documents

Publication Publication Date Title
JPS6233734B2 (fr)
JPH0492413A (ja) 結晶薄膜の成長方法
JPS59161014A (ja) 半導体薄膜結晶化方法
JPS59184517A (ja) 積層型半導体装置の製造方法
JPS6147627A (ja) 半導体装置の製造方法
JPH0236051B2 (fr)
JPS5939791A (ja) 単結晶の製造方法
JPH0236050B2 (fr)
JPS6159820A (ja) 半導体装置の製造方法
JPS58180019A (ja) 半導体基体およびその製造方法
JPH0368532B2 (fr)
JP2993107B2 (ja) 半導体薄膜の製造方法
JPS62130509A (ja) 半導体基体の製造方法
JPS6362088B2 (fr)
JPS5946021A (ja) 半導体装置の製造方法
JPH0152888B2 (fr)
JPS62130510A (ja) 半導体基体の製造方法
JPS59154016A (ja) 薄膜結晶形成法
JP2694615B2 (ja) 単結晶半導体薄膜の形成方法
JPS60246622A (ja) 半導体結晶層の製造方法
JPH0779078B2 (ja) 半導体層の単結晶化方法
JPS5886716A (ja) 単結晶半導体膜形成法
JPH0461491B2 (fr)
JPH0396225A (ja) 半導体基板の製造方法
JPH039514A (ja) 半導体基板の製造方法