JPS5918195A - 超高真空薄膜成長装置 - Google Patents

超高真空薄膜成長装置

Info

Publication number
JPS5918195A
JPS5918195A JP12502482A JP12502482A JPS5918195A JP S5918195 A JPS5918195 A JP S5918195A JP 12502482 A JP12502482 A JP 12502482A JP 12502482 A JP12502482 A JP 12502482A JP S5918195 A JPS5918195 A JP S5918195A
Authority
JP
Japan
Prior art keywords
chamber
cassette
substrate
cassete
isolation wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12502482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214224B2 (enExample
Inventor
Michiharu Tanabe
田部　道晴
Kenji Kajiyama
梶山　健二
Tetsuo Ishida
哲夫 石田
Minoru Kondo
実 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
NTT Inc
Original Assignee
Canon Anelva Corp
Nippon Telegraph and Telephone Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Nippon Telegraph and Telephone Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP12502482A priority Critical patent/JPS5918195A/ja
Publication of JPS5918195A publication Critical patent/JPS5918195A/ja
Publication of JPS6214224B2 publication Critical patent/JPS6214224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP12502482A 1982-07-20 1982-07-20 超高真空薄膜成長装置 Granted JPS5918195A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12502482A JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12502482A JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Publications (2)

Publication Number Publication Date
JPS5918195A true JPS5918195A (ja) 1984-01-30
JPS6214224B2 JPS6214224B2 (enExample) 1987-04-01

Family

ID=14899961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12502482A Granted JPS5918195A (ja) 1982-07-20 1982-07-20 超高真空薄膜成長装置

Country Status (1)

Country Link
JP (1) JPS5918195A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63116419A (ja) * 1986-11-05 1988-05-20 Nec Corp 基板加熱装置
US4883020A (en) * 1985-07-19 1989-11-28 Fujitsu Limited Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883020A (en) * 1985-07-19 1989-11-28 Fujitsu Limited Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor
JPS63116419A (ja) * 1986-11-05 1988-05-20 Nec Corp 基板加熱装置

Also Published As

Publication number Publication date
JPS6214224B2 (enExample) 1987-04-01

Similar Documents

Publication Publication Date Title
US5607009A (en) Method of heating and cooling large area substrates and apparatus therefor
JP4237939B2 (ja) 基板加熱冷却を改良した真空処理装置
US6382895B1 (en) Substrate processing apparatus
JP3909888B2 (ja) トレイ搬送式インライン成膜装置
JP2600399B2 (ja) 半導体ウエーハ処理装置
JPS5918195A (ja) 超高真空薄膜成長装置
JPH0786247A (ja) 減圧雰囲気内における被処理物の処理方法及び処理装置
JPS62996B2 (enExample)
JPS609103B2 (ja) 連続スパッタ装置
US5327624A (en) Method for forming a thin film on a semiconductor device using an apparatus having a load lock
JP3844608B2 (ja) 真空成膜装置
JPH07258839A (ja) スパッタリング装置
JPH0542507B2 (enExample)
WO2010013333A1 (ja) 真空装置及び真空処理方法
JPS63177426A (ja) 気相成長方法及び装置
JPS6233745B2 (enExample)
JP3082148B2 (ja) 複合型ウェハ処理装置
JPH0756864B2 (ja) エピタキシヤル気相成長装置
JPH01120811A (ja) 半導体ウエハ処理装置
JPH04349930A (ja) 真空装置及びその制御方法
JPH0362515A (ja) 真空加熱処理装置
JPH04349929A (ja) 真空装置
JPH0521867Y2 (enExample)
JPH08117583A (ja) 真空処理装置
JPH04183863A (ja) 基板処理装置