JPS59177923A - 半導体への硼素拡散方法 - Google Patents

半導体への硼素拡散方法

Info

Publication number
JPS59177923A
JPS59177923A JP5207983A JP5207983A JPS59177923A JP S59177923 A JPS59177923 A JP S59177923A JP 5207983 A JP5207983 A JP 5207983A JP 5207983 A JP5207983 A JP 5207983A JP S59177923 A JPS59177923 A JP S59177923A
Authority
JP
Japan
Prior art keywords
hydrogen
diffusion
boron
fed
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5207983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586650B2 (enrdf_load_stackoverflow
Inventor
Akio Saito
昭男 斉藤
Mitsuo Omi
大海　三男
Mitsuo Kishimoto
岸本　光雄
Kazuaki Matsuura
松浦　一晃
Yoshihiko Katsumoto
勝本　喜彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP5207983A priority Critical patent/JPS59177923A/ja
Publication of JPS59177923A publication Critical patent/JPS59177923A/ja
Publication of JPH0586650B2 publication Critical patent/JPH0586650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP5207983A 1983-03-28 1983-03-28 半導体への硼素拡散方法 Granted JPS59177923A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5207983A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5207983A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Publications (2)

Publication Number Publication Date
JPS59177923A true JPS59177923A (ja) 1984-10-08
JPH0586650B2 JPH0586650B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=12904808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5207983A Granted JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Country Status (1)

Country Link
JP (1) JPS59177923A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857480A (en) * 1986-10-29 1989-08-15 Mitel Corporation Method for diffusing P-type material using boron disks
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法
JP2008028222A (ja) * 2006-07-24 2008-02-07 Takaoka Kasei Kogyo Kk モールド変圧器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538046A (en) * 1978-09-12 1980-03-17 Toshiba Corp Transformer for condenser type meter
JPS56169322A (en) * 1980-05-30 1981-12-26 Fujikura Ltd Selective diffusion of boron into silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538046A (en) * 1978-09-12 1980-03-17 Toshiba Corp Transformer for condenser type meter
JPS56169322A (en) * 1980-05-30 1981-12-26 Fujikura Ltd Selective diffusion of boron into silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857480A (en) * 1986-10-29 1989-08-15 Mitel Corporation Method for diffusing P-type material using boron disks
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法
EP0504857A3 (en) * 1991-03-20 1995-04-12 Shinetsu Handotai Kk Process of diffusing boron into semiconductor wafers
JP2008028222A (ja) * 2006-07-24 2008-02-07 Takaoka Kasei Kogyo Kk モールド変圧器

Also Published As

Publication number Publication date
JPH0586650B2 (enrdf_load_stackoverflow) 1993-12-13

Similar Documents

Publication Publication Date Title
US3503798A (en) Silicon nitride film deposition method
JPS6311598A (ja) 有機金属気相成長用シリンダ−
JPS59177923A (ja) 半導体への硼素拡散方法
JPS6119101B2 (enrdf_load_stackoverflow)
JPH0310082A (ja) 堆積膜形成装置及び堆積膜形成方法
JP3970411B2 (ja) 湿式酸化を用いた薄膜酸化膜の形成方法
JPH0686342B2 (ja) セラミックの金属被覆方法
US3477887A (en) Gaseous diffusion method
US5489446A (en) Device for forming silicon oxide film
JPS60107840A (ja) 半導体素子の製造法
JPH0774166A (ja) 熱処理装置
EP0279406A2 (en) Device for forming silicon oxide film
JPH0442916Y2 (enrdf_load_stackoverflow)
JPS60147124A (ja) 半導体装置の製造方法
JPS62210618A (ja) 半導体素子の製造方法
JPS59227128A (ja) 半導体基体の酸化法
JPH07130676A (ja) 半導体ウェーハのホウ素拡散方法
JPH0244716A (ja) 不純物導入方法
JP3357219B2 (ja) シリカ系被膜の形成方法及び形成装置
JPH01196816A (ja) 不純物導入方法
KR950009937B1 (ko) 반도체소자의 게이트절연막 형성방법
JPS6249981B2 (enrdf_load_stackoverflow)
JP3068050B2 (ja) 水蒸気流量の制御方法
JPS6236086A (ja) 炭化珪素製品の製造方法
JPS6335092B2 (enrdf_load_stackoverflow)