JPH0586650B2 - - Google Patents

Info

Publication number
JPH0586650B2
JPH0586650B2 JP58052079A JP5207983A JPH0586650B2 JP H0586650 B2 JPH0586650 B2 JP H0586650B2 JP 58052079 A JP58052079 A JP 58052079A JP 5207983 A JP5207983 A JP 5207983A JP H0586650 B2 JPH0586650 B2 JP H0586650B2
Authority
JP
Japan
Prior art keywords
diffusion
boron
gas
flow rate
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58052079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59177923A (ja
Inventor
Akio Saito
Mitsuo Oomi
Mitsuo Kishimoto
Kazuaki Matsura
Yoshihiko Katsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5207983A priority Critical patent/JPS59177923A/ja
Publication of JPS59177923A publication Critical patent/JPS59177923A/ja
Publication of JPH0586650B2 publication Critical patent/JPH0586650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP5207983A 1983-03-28 1983-03-28 半導体への硼素拡散方法 Granted JPS59177923A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5207983A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5207983A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Publications (2)

Publication Number Publication Date
JPS59177923A JPS59177923A (ja) 1984-10-08
JPH0586650B2 true JPH0586650B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=12904808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5207983A Granted JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Country Status (1)

Country Link
JP (1) JPS59177923A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1244969A (en) * 1986-10-29 1988-11-15 Mitel Corporation Method for diffusing p-type material using boron disks
JP2583681B2 (ja) * 1991-03-20 1997-02-19 信越半導体株式会社 半導体ウェーハへの硼素拡散方法
JP4827131B2 (ja) * 2006-07-24 2011-11-30 タカオカ化成工業株式会社 モールド変圧器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538046A (en) * 1978-09-12 1980-03-17 Toshiba Corp Transformer for condenser type meter
JPS56169322A (en) * 1980-05-30 1981-12-26 Fujikura Ltd Selective diffusion of boron into silicon

Also Published As

Publication number Publication date
JPS59177923A (ja) 1984-10-08

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